- Research Article
- 10.37665/pprofpj58996
Transient Liquid Phase Sintered Joints for Wide Bandgap Power Electronics Packaging
- Feb 01, 2014
- Pan Pacific Symposium
- Patrick Mccluskey + 1 more +1
Power electronic systems have become a key component in the efficient generation, distribution, storage, and use of energy. This increasingly places power electronic systems in harsh environments under elevated stress conditions where, in many cases, their reliable operation is now mission critical. The semiconductor material conventionally used, silicon, possesses limited capability for high temperature applications due to its small bandgap. Power electronic components based on wide bandgap (WBG) semiconductors, such as SiC and GaN, can be operated reliably at higher temperatures. Furthermore, WBG devices have higher breakdown voltages and switching frequencies, rendering them more ideal switches and rectifiers for highefficiency as well as low-volume and low-weight systems. Yet, new packaging concepts are required to make use of the high temperature capability of power electronic systems based on WBG semiconductor devices. In this paper, a summary of the progress in the development and commercialization of wide bandgap power components and power electronic systems is given. The properties of SiC and GaN components are compared to those based on silicon. The shortcomings of conventional power electronic packaging technologies are analyzed, and alternatives introduced and compared. An overview of research is given on Transient Liquid Phase Sintering (TLPS), a promising interconnect technology for the manufacturing of WBG and high temperature power electronic systems. TLPS is a liquid-assisted sintering process during which a low melting temperature constituent melts, surrounds, and diffuses in a high melting temperature constituent. Intermetallic compounds with high melting temperatures are formed by liquid-solid diffusion. Interconnect systems can be processed at low temperatures but are capable of operating at the high melting temperatures of the intermetallic compound. Different process approaches are contrasted and material systems compared. Latest results of research on paste-based low temperature TLPS are presented. The pastes assessed are based on the Cu-Sn and Ni-Sn material systems. It is shown that joints formed by TLPS remain strong up to 600°C and exhibit softening temperatures far higher than conventional interconnect technologies. They show minimum creep and possess very limited voiding. The process does not require an inert or reducing atmosphere or vacuum and is compatible with standard reflow soldering equipment. It shows good wettability to common metallizations such as Cu, Ni, Ag, and ENIG. This attach technology shows the potential to enable reliable operation of wide bandgap power electronic systems under high stress conditions.
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