- Conference Article
- 10.1117/12.883015
Characteristics of CO sensors made by polar and nonpolar ZnO nanowires gated AlGaN/GaN high electron mobility transistor
- May 13, 2011
- Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE
- S C Hung + 5 more +5
AlGaN/GaN high electron mobility transistors (HEMTs) with polar and nonpolar ZnO nanowires modified gate exhibit significant changes in channel conductance upon expose to different concentration of carbon monoxide (CO) at room temperature. The ZnO nanowires, grown by chemical vapor deposition (CVD), with perfect crystal quality will attach CO molecule and release electrons, which will lead to a change of su rface charge in the gate region of the HEMTs, inducing a higher positive charge on the AlGaN surface, and increasin g the piezoinduced charge density in the HEMTs channel. These electrons create an image positive char ge on the gate region for the required neutrality, thus increasing the drain current of the HEMT s. The HEMTs source-drain current was highly dependent on the CO concentration. The limit of detection achieved was 400 ppm and 3200ppm in the open cavity with continuous gas flow using a 50 50 P m 2 gate sensing area for polar and nonpolar ZnO nanowire gated HEMTs sensor.
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