1- https://doi.org/10.1557/proc-367-323
Morphological Evolution with Layer Thickness in single crystal CeO2(110)/Si(100)
- Jan 1, 1994
- MRS Proceedings
- Tomoyasu Inoue +3 more
Abstract Surface morphology evolution of epitaxially grown CeO2(110) layers on Si(100) substrates is studied using atomic force microscopy (AFM) and reflection high energy electron diffraction (RHEED). The surface has a faceted structure; a stripe-appearance and triangular-shape in plan- and cross-sectional views, respectively. AFM measurements clarify that as the layer thickness increases, the cross-sectional shape changes from a gable roof shape toward trapezoidal, which is consistent with RHEED analyses. The width of the facet monotonically increases with the layer thickness, while its height saturates at ∼5 nm above 600 nm in thickness, which means that the surface approaches smooth morphology. Ion channeling analyses indicate that the thicker the layer, the better the crystalline quality at the surface.
- # Reflection High Energy Electron Diffraction
- # Reflection High Energy Electron Diffraction Analyses
- # Cross-sectional Shape Changes
- # Atomic Force Microscopy
- # Layer Thickness Increases
- # Nm In Thickness
- # Faceted Structure
- # Cross-sectional Views
- # Cross-sectional Shape
- # Crystalline Quality
