Multi-aperture ultra-high-speed imaging with lateral electric field charge modulators

Abstract

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The time resolution of charge modulation in CMOS image sensors has entered the sub-nano second regime and is still reducing toward tens of pico-second. The lateral electric field modulators (LEFM) invented at Shizuoka University has significantly contributed to the recent progress in the solid-state time-resolved imaging field. Based on the LEFM technology, we are developing ultra-high-speed CMOS image sensors whose frame rate or time resolution is determined only by the charge modulation speed. In this presentation, the concept, architecture, example of implementation, and demonstration of 200Mfps single-shot video capturing based on our scheme are shown.