Multiple sintering of MnZn ferrites in controlled atmosphere

The variations in the electrical and mechanical properties of solution-processed amorphous indium–gallium–zinc–oxide thin-film transistors exposed to high-humidity ambient conditions for long periods were analyzed. When the TFT was exposed to high-humidity conditions, field-effect mobility severely decreased, while ON/OFF current ratio improved and subthreshold slope value remained nearly constant, which is different from that exposed to low-humidity condition. We found that the H2O molecules induce mechanical peeling of the active layer such that they act as acceptor-like deep states, which is very different from the prior results under low humidity condition. The variations in electrical characteristics were systematically analyzed using a technology-CAD simulation before and after exposure to highhumidity conditions.

We report on a non-invasive contact probing (NICP) system for measuring the distribution of local surface conductivity of macroscopic thin-films of carbon nanotubes. Using the NICP system, we were able to obtain the local sheet resistance of the conducting thin-films continuously at ∼10 μm resolution over few centimeters which would not have been possible using conventional contact probing methods. Measurements performed on carbon nanotube thin-films with various nanotube densities, physical, and chemical treatments revealed that the local variation in electrical characteristics was not reflected in global conductance measurements. This demonstrated the usefulness of the NICP system for evaluating the effect of processing on the electrical uniformity of conducting thin-films made using nanomaterials.

In this paper we investigate the reliability of AlGaN-based UV-C LEDs with an emission wavelength of 265 nm. By submitting the devices to constant current stress, two main electrical degradation processes are identified: a turn-on voltage shift and an increase in the forward leakage current. In particular, these processes were respectively attributed to: (i) a partial passivation of the Mg-doping concentration in the region adjacent to the contact, probably caused by a local hydrogen diffusion, and ii) a diffusion/generation process of defects in the interlayer, responsible for the increase in the trap-assisted tunneling. To validate these hypotheses, we employed TCAD simulations by varying only the Mg-doping concentration in the region adjacent to the p-contact and the defect density in the interlayer. Thus, we correctly reproduced the experimental variation in electrical characteristics, confirming the physical mechanisms identified.

We developed EA-modulator modules with over 40-GHz modulation bandwidth using the flip-chip bonding (FCB) technique. The FCB minimizes parasitic inductance and module-to-module variation in electrical characteristics, and is indispensable to high-speed EA-modulator modules for 80 Gbit/s.

A practical supply current test method is proposed and the experimental evaluation results are presented. In the method, the unit-to-unit variation of electrical characteristics in each logic gate is modeled as a Gaussian distribution and faults are detected with a statistical hypothesis technique.

Electrical and photoelectric characteristics of Pd-p-InP diode structures were studied after their storage in air for many years. An increase in the Schottky barrier height by 0.2–0.3 eV and a rise in photosensitivity were revealed. The current transport mechanism is governed by a generation-recombination current and by tunneling via 0.28 and 0.40 eV levels. An assumption is made that these impurity centers lie in the surface layer of p-InP at the heterointerface with Pd.

Structural and electrical characteristics of double perovskite: Nd2CoMnO6

Abstract—Variations in the vertical electric field and atmospheric current in the near-surface atmosphere, accompanying strong earthquakes, are analyzed. The analysis is based on the data of the Center for Geophysical Monitoring in Moscow (CGM) and Geophysical observatory “Mikhnevo” of the Sadovsky Institute of Geosphere Dynamics of Russian Academy of Sciences (IDG RAS). We considered seismic events that occurred when the electric field and atmospheric current were not disturbed by anthropogenic sources and natural impacts unrelated to earthquakes. It is noted that the earthquakes are accompanied by the increased local variations in the electric field in the period of arrival of seismic waves at the observation point and variations associated with the source region of the seismic event. In the latter case, the effect appears as a bay-like decrease and increase and as alternating variations in the vertical gradient of the electric potential. Simultaneously, the earthquakes are accompanied by the increased variations in the atmospheric current. For the first time it is shown that the main shock is accompanied by the increased variations in the electrical characteristics of the near-surface atmosphere at significant distances from the seismic source.

Gold nanoparticle decorated graphene for efficient sensing of NO2 gas

Temperature dependence of characteristic parameters of the Au/SnO 2/ n-Si (MIS) Schottky diodes

Mechanical and thermal reliability of printed organic thin-film transistor

A simulator named CASTAM, which includes both process and device models, has been developed to predict MOS process variations through the analysis of variations in electrical characteristics of fabricated MOS devices using the Monte Carlo method. Analysis accuracy using the simulator is examined. Investigation shows that process parameter variations can be estimated with an error of less than 10 percent if an appropriate set of device characteristic items is chosen. Wafer inspection data for a CMOS pilot line can be analyzed with this simulator, and the main cause of threshold voltage variation pinpointed. Predictions derived from the analyzed results have been confirmed using experimental data. This shows that analysis using CASTAM is sufficiently reliable.

Investigation of the radial variation in electrical and chemical characteristics of cable insulation between conductor and sheath is suggested as a valuable means for throwing new light on cable'deterioration in service. An apparatus is described for the rapid accurate measurement of power factor of individual paper tapes taken from cable. A method is given for determining the total oxidation products in the oil from the paper tapes, layer by layer, from sheath to conductor. The results obtained by applying these methods to several types of service aged cable are reported, together with the indications which they give of the relative importance of ionization and oxidation as aging factors.

IINVESTIGATION of the radial variation in electrical and chemical characteristics of cable insulation between conductor and sheath is suggested as a valuable means for throwing light on cable deterioration in service. A cell is described for the rapid accurate measurement of power factor of individual paper tapes taken from cable. A method is given for determining the total oxidation products in the oil from the paper tapes, layer by layer, from sheath to conductor. The results obtained by applying these methods to several types of service-aged cables are reported, together with the indications which they give of the relative importance of ionization and oxidation as aging factors.

This paper presents the electromagnetic loss analysis and mitigating methods of switched flux permanent magnet (SFPM) machines. The 2-dimentional finite element (2-D FE) method is used to calculate the flux density in all the mesh elements within stator and rotor iron cores, then the stator and rotor hysterisis, eddy current and excess losses are calculated. The PM eddy current losses have been calculated as well by using 2-D FE method. The methods such as segmenting (either radially or axially) the permanent magnets or modifying the ratio of rotor pole to pole pitch have been employed for eddy current reduction. The FE results have shown that the proposed methods are very effective in reducing PM eddy current losses without sacrificing the average torque of the investigated SFPM machines.