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Negative Piezoelectric Coefficient in Ferromagnetic1H-LaBr2 Monolayer

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Abstract

The discovery oftwo-dimensional (2D) magnetic materials that haveexcellent piezoelectric response is promising for nanoscale multifunctionalpiezoelectric or spintronic devices. Piezoelectricity requires a noncentrosymmetricstructure with an electronic band gap, whereas magnetism demands brokentime-reversal symmetry. Most of the well-known 2D piezoelectrics,e.g., 1H-MoS2 monolayer, are not magnetic. Being intrinsicallymagnetic, semiconducting 1H-LaBr2 and 1H-VS2 monolayers can combine magnetism and piezoelectricity. We comparepiezoelectric properties of 1H-MoS2, 1H-VS2,and 1H-LaBr2 using density functional theory. The ferromagnetic1H-LaBr2 and 1H-VS2 monolayers display largerpiezoelectric strain coefficients, namely, d11 = −4.527 pm/V for 1H-LaBr2 and d11 = 4.104 pm/V for 1H-VS2, comparedto 1H-MoS2 (d11 = 3.706 pm/V).1H-MoS2 has a larger piezoelectric stress coefficient (e11 = 370.675 pC/m) than 1H-LaBr2 (e11 = −94.175 pC/m) and 1H-VS2 (e11 = 298.100 pC/m). The large d11 for 1H-LaBr2 originates from thelow elastic constants, C11 = 30.338 N/mand C12 = 9.534 N/m. The sign of the piezoelectriccoefficients for 1H-LaBr2 is negative, and this arisesfrom the negative ionic contribution of e11, which dominates in 1H-LaBr2, whereas the electronicpart of e11 dominates in 1H-MoS2 and 1H-VS2. We explain the origin of this large ioniccontribution of e11 for 1H-LaBr2 through Born effective charges (Z11)and the sensitivity of the atomic positions to the strain (du/dη). We observe a sign reversal in the Z11 values of Mo and S compared to the nominal oxidationstates, which makes both the electronic and ionic parts of e11 positive and results in the high value of e11. We also show that a change in magnetic ordercan enhance (reduce) the piezoresponse of 1H-LaBr2 (1H-VS2).

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