Nickel–chromium alloy piezoresistive pressure sensor using eutectic bonding

Pressure measurement is a key part of many commercial and industrial systems. Piezoresistive pressure sensors are simpler to integrate with electronics, they are inherently shielded from RF noise and their response is more linear while compared to capacitive pressure sensors. And piezoresistive devices have always dominated the pressure sensor market. The analyticals that are typically used to model the diaphragm of the pressure sensor have been analysed by many researchers. To optimize the pressure sensor for parameters like linearity and sensitivity, the Finite Element Method (FEM) is incorporated. The selection of appropriate parameters of piezoresistors such as the shape and the position of the piezoresistor on the pressure sensor diaphragm, thickness of diaphragm are important. This study shows the scope of using analytical solutions and design techniques for a piezoresistive pressure sensor.

At present, the silicon piezoresistive pressure sensor is a mature technology in the industry, and its measurement accuracy is more rigorous in many advanced applications. Micro piezoresistive pressure sensor is fabricated by a MEMS process, and its main operational principle is that the external pressure loading causes the deflection, strain, and stress which occur on the silicon membrane. The environmental temperature, the humidity, and the pressure will reduce its performance. Moreover, the drifts of output voltage in the same temperature caused by the residual stress on the aluminum trace under thermal cycle loading also influence the performance of the piezoresistive pressure sensor. This is called the thermal hysteresis phenomenon, and the variation of output voltage is called the thermal hysteresis voltage. Among the critical issues of silicon piezoresistive pressure sensor, the hysteresis phenomenon should be deeply paid attention to obtain better sensor accuracy. For this reason, this research would like to investigate the effect of the external loading on the output voltage of a pressure sensor. Based on the process of pressure sensors, this research adopts the concept of pseudo temperature combined with a finite element method (FEM) to obtain the thermal hysteresis voltage. After several numerical analysis of thermal hysteresis voltage, the experiment is then performed to validate the simulation results. After being validated with the experimental results, the variation of thermal hysteresis voltage under a different trace layout is analyzed. Based on simulation results of a different trace layout, it is found that the trace line layout plays an important role in the thermal hysteresis performance of a pressure sensor, which indicates that the longer aluminum trace increases the hysteresis voltage. The uniform and symmetrical layout of aluminum trace can reduce the variation of resistance change and decrease the hysteresis voltage. Furthermore, the trace layout which is far away from the silicon membrane and piezoresistance is suggested to reduce the hysteresis voltage.

Wearable devices have developed significantly due to the use and development of various materials such as organic materials and carbon nanotubes, and the demand for wearables is also growing. The piezoresistive pressure sensor has been developed using conductive fabric coated with a simple solution coating process. The fabric has an open structure with the interconnected top and lower layers that can be utilized as pressure sensors and can detect physical movements. The piezoresistive pressure sensor has excellent resistance linearity in the low pressure to 10kPa range, as well as consistent resistance to strain up to 20% when stretched. The pressure sensor array can detect pressure-induced local deformation and will be expected to contribute considerably to the development of wearable devices with a simplified process.

Design of piezoresistive pressure sensor for enhancing stress of MEMS cantilever

Sensitivity analysis of packaging effect of silicon-based piezoresistive pressure sensor

High reliability of piezoresistive pressure sensors by wafer to wafer direct bonding at room temperature

Surface micromachining is becoming increasingly popular for microelectromechanical systems (MEMS) and a new application for this process technology is pressure sensors. Uncompensated surface micromachined piezoresistive pressure sensors were fabricated by Sandia National Labs (SNL). Motorola packaged and tested the sensors over pressure, temperature and in a typical circuit application for noise characteristics. A brief overview of surface micromachining related to pressure sensors is described in the report along with the packaging and testing techniques used. The electrical data found is presented in a comparative manner between the surface micromachined SNL piezoresistive polysilicon pressure sensor and a bulk micromachined Motorola piezoresistive single crystal silicon pressure sensor.

Silicon-based Microelectromechanical System (MEMS) pressure sensors are extensively used and have the advantages of high accuracy and miniaturization. Despite this, due to inherent material limitations, they are not easily able to withstand high temperatures greater than 150°C. To overcome this disadvantage, Silicon Carbide (SiC) is the preferred material because it has excellent thermomechanical properties and operates above 600°C. Piezoresistive pressure sensors made of Silicon Carbide are ideally able to detect pressures beyond 600°C. Our work presents MEMS Single turn meander-shaped piezoresistive pressure sensor on a circular SiC diaphragm for high pressure applications of pressure range 0–40[Formula: see text]MPa in harsh environment. This work models and analyses the piezoresistive pressure sensor characteristics using an analytical modeling and simulation method to choose the best design. To ascertain its sensitivity, expressions are computationally simulated with MATLAB software using the thin plate and small deflection theory. To evaluate the viability of the model, COMSOL Multiphysics simulation is used. When compared to recent studies, our proposed sensor provides a sensitivity of near about 5.4[Formula: see text]mV/V/MPa across a pressure range of 0–40[Formula: see text]MPa.

Flexible piezo-resistive pressure sensor based on conducting PANI on paper substrate

In this study, a variety of piezoelectric pressure transducer designs and mounting configurations were compared for measuring in-cylinder pressure on a heavy-duty single-cylinder diesel engine. A unique cylinder head design was used which allowed cylinder pressure to be measured simultaneously in two locations. In one location, various piezoelectric pressure transducers and mounting configurations were studied. In the other location, a Kistler water-cooled switching adapter with a piezoresistive pressure sensor was used. The switching adapter measured in-cylinder pressure during the low pressure portion of the cycle. During the high pressure portion of the cycle the sensor is protected from the high pressure and high temperature gases in the cylinder. Therefore, the piezoresistive sensor measured in-cylinder pressure highly accurately, without the impacts of short term thermal drift, otherwise known as thermal shock. Additionally, the piezoresistive sensor is an absolute pressure sensor which does not require a baseline or “pegging” on every engine cycle. With this measurement setup, the amount of thermal shock and induced measurement variability was accurately assessed for the piezoelectric sensors. Data analysis techniques for quantifying the accuracy of a piezoelectric cylinder pressure measurements are also presented and discussed. It was observed that all the piezoelectric transducers investigated yielded very similar results regarding compression pressure, start of combustion, peak cylinder pressure, and the overall heat release rate shape. Differences emerged when studying the impact of the transducer mounting (e.g., recessed vs. flush-mount). Recessed-mount transducers tended to yield a more accurate measurement of the cycle-to-cycle variability when compared to the baseline piezoresistive sensor. This is thought to be due to reduced levels of thermal shock, which can vary from cycle-to-cycle.

Anodic bonding between glass wafer and Si wafer are widely used for micro-electro-mechanical system (MEMS) device fabrication and packaging due to the good bonding quality. The residual stress in the bonding interface, which results from the different thermal expansion coefficients of the two wafer materials, is depended on the bonding temperature. In MEMS piezoresistive pressure sensor, the residual stress in anodic bonding, which can affect the accuracy of the device, is investigated by using the finite element method (FEM). The piezoresistive pressure sensor performance is evaluated and the residual stress effect at different temperatures is investigated in this research. The simulation results show that anodic bonding residual stress affect piezoresistive pressure sensor accuracy significantly.

Optimising polyurethane/CNTs piezoresistive pressure sensors by varying the modulus of the polymer matrix

A facile fabrication strategy constructed multilayer piezoresistive pressure sensor for intelligent recognition system towards privacy protection

Flexible piezoresistive pressure sensors may exhibit excellent sensing performances to be applied in wearable electronics, medical diagnosis, and electronic skin. Herein, we report a multi-layer and phased-responsive reduced graphene oxide/MXene-based piezoresistive pressure sensor with hierarchical microspines constructed by sandpaper as the template. Thanks to the multi-level and multi-layer structure, the obtained sensor realized phased response and showed wide detection range (up to 70 kPa), fast response (response/recovery time of 40/80 ms), and excellent working stability (1000 fatigue cycles). Furthermore, the sensor was successfully applied for detecting various human motions including pulse beats, cheek bulging, nodding, finger bending, speech recognition, handwriting, and other pressure signals. Besides, a 6 × 6 sensing matrix integrated by the sensors was able to sensitively perceive the distribution of plane pressure. The findings in this work conceivably stand out as a new strategy to fabricate high-performance piezoresistive pressure sensors in the fields of intelligent healthcare and medical diagnosis, wearable electronic devices, electronic skin, and human-machine interaction.

The sensitivity and linearity are two extremely important performance parameters for pressure sensors. Superior sensitivity and outstanding linearity enable them to adapt to different application scenarios and accurately acquire pressure change. However, it is challenging for current piezoresistive pressure sensors to balance both of these performance aspects. This study proposes a fabric-based resistive pressure sensor with multiscale structures. The constructed resistive pressure sensor exhibits exceptional linearity exceeding 99% within a detection range of 0–1 MPa. Compared to the reported piezoresistive pressure sensors with ultrawide ranges, this sensor demonstrates higher sensitivity and a broader linear response range. In addition, this device exhibits excellent temperature tolerance. Our work will extend the application limits of sensors in fields, such as health monitoring and diagnostics, wearable devices, and human-machine interaction.