Optoelectronic properties of Au/n-type Si semiconductor structures with SiO2 interlayer

Illumination response on the electrical characterizations of Cr/n–GaAs/In photodiode

A novel device behavior of Ag/MgPc/n-GaAs/Au-Ge organic based Schottky diode

Electronic and photovoltaic properties of a single layer poly[3-(2″,5″-diheptyloxyphenyl)-2,2′-bithiophene] devices

The influence of high energy electron irradiation on the Schottky barrier height and the Richardson constant of Ni/4H-SiC Schottky diodes

Effect of perylenetetracarboxylic dianhydride on the main electrical properties and interface states of Al/p-Si structures

Deposition of poly(4-vinyl phenol) insulator layer is carried out by applying the spin coating technique ontop-type GaAs substrate so as to create Al/poly(4-vinyl phenol)/p-GaAs metal-oxide-semiconductor (MOS) structure. Temperature was set to 80–320 K while the current-voltage (I-V) characteristics of the structure were examined in the study. Ideality factor (n) and barrier height (ϕb) values found in the experiment ranged from 3.13 and 0.616 eV (320 K) to 11.56 and 0.147 eV (80 K). Comparing the thermionic field emission theory and thermionic emission theory, the temperature dependent ideality factor behavior displayed that thermionic field emission theory is more valid than the latter. The calculated tunneling energy was 96 meV.

Optoelectric response of Schottky photodiode with a PVP: ZnTiO3 nanocomposite as an interfacial layer

The aim of this paper deal with the mathematical modelling approach and behaviour of thin-film a-Si: H solar cells. The current-voltage (I-V) curve presents double linearities on the cell parameters and the exponential. So, thin-film P-I-N solar cell (a-Si-H) based on the classic combination of diode with an exponential I-V characteristics and adding a new current named recombination loss. The fundamental understanding of parasitic parameters will be discussed, and an equivalent circuit used in the research to study thin-film P-I-N structures is described. This work will show the mathematical modelling and prediction of dynamic resistance and short circuit current and open-circuit voltage resistance. The impact of parameters on the performance of an a-Si: H solar cell in different solar irradiations is more difficult to comprehend than that of crystalline silicon. As a result, adding an additional diode to the model can help for a more thorough investigation of the degradation process, particularly the Staebler-Worski effect. The parasitic resistance and dynamic resistance are determining in open-circuit voltage and short circuit current. Finally, the experimental I-V and P-V curves are displayed to investigate the various irradiation intensities.

Deposition of earth-abundant p-type CuBr films with high hole conductivity and realization of p-CuBr/n-Si heterojunction solar cell

The electrical and photovoltaic properties of Al-doped and undoped polyacetylene-Electrodag +502 Schottky barrier diodes have been examined. The current-voltage and capacitance-voltage characteristics at different temperatures were investigated. The dependence of short-circuit current and open-circuit voltage on the light intensity, temperature, concentration of acceptors and oxygen was also determined. The yield of light energy transformed into electrical energy around 0.1% is obtained in the best case (Voc approximately=650 mV, Jsc approximately=200 mu A cm-2, FF approximately=0.3 and Pin approximately=50 mW cm-2).

Fabrication, electrical transport mechanisms and photovoltaic properties of methyl violet 2B/n-Si hybrid organic/inorganic solar cell

Electrical characteristics of Au/Pyronine-B/moderately doped n-type InP Schottky structures in a wide temperature range

In fabricating CdS/CdTe photovoltaic devices by close space sublimation method, thermal annealed in CdCI2 ambient at 400 °C at the interface is deposited an i-CdO layer by magnetron sputtering. Comparative analysis of electrical, photovoltaic parameters and photo-response spectral distribution is studied. The insertion of i-CdO at the interface of device increases both short circuit current (Isc) and open circuit voltage (Voc). In addition, the experimental results revealed that the insertion of i-nanolayer broaden the depletion region of the device and diminish the interface state density, thus improving efficiency of the device.

A growth of A–Z phthalocyanine layers onto Si by thermal evaporation process to achieve organic heterojunction diodes

We report the electrical properties of the Au/n–GaAs devices with and without thin organic interface layer. Methylene blue (MB) is a heterocyclic aromatic chemical compound with the molecular formula C16H18N3SCl. The MB layer was formed by spin coating technique on chemically cleaned gallium arsenide (GaAs) substrate. The current–voltage (I–V) and the frequency dependent capacitance–voltage (C–V) characteristics of the Au/MB/n–GaAs metal-insulator-semiconductor (MIS) and Au/n–GaAs metal-semiconductor (MS) devices have been investigated at room temperature. The MS and MIS devices I–V characteristics the showed a good rectification, and they were analyzed based on the thermionic emission (TE) theory. The ideality factor (n) and the barrier height (Φb(IV)) from the I–V characteristics was determined as 1.131±0.006 and 0.782±0.005 eV for MS device and 1.336±0.057 and 0.950±0.008 eV for MIS device, respectively. A Cheung’s method and modified Norde's function has been used to extract the parameters including the (Φb) and the series resistance (RS). Also the values of the barrier height obtained from the C–V measurements (Φb(CV)) of the MS and MIS was 0.863±0.034 eV and 1.187±0.093 eV, at 1 MHz, respectively.Distributions of the interface state density (Dit) of the MS and MIS devices were derivate from I–V and C–V measurements. Our results indicates that the Au/MB/n–GaAs device had lower interface state density values than the Au/GaAs device. Also non-saturated reverse bias current investigated by the using a Pole-Frenkel emission model. Furthermore, the optical and morphological properties of MB layer were investigated by the Atomic Force Microscopy (AFM), Scanning Electron Microscopy (SEM) and UV-vis Spectrophotometer (UV-vis).Finally, we showed that, increasing Φb and decreasing Dit and improving electrical parameters of MIS devices indicates that, thin MB interface layer could prefer for modification of Au/n–GaAs devices.