Polarization Engineering to Manipulate the Breakdown Voltage for GaN‐Based PIN Diodes

As the performance of GaN- and SiC-based power devices becomes limited by fundamental material properties, semiconductors with larger bandgaps are appealing due to their superior material properties. Most notable is that the critical electrical field scales as the bandgap to the 2.0-2.5 power. Thus, diodes employing wide bandgap semiconductors are expected to operate at higher breakdown voltages with thinner and more heavily-doped drift regions, leading to lower resistive losses. AlGaN alloys with their much larger bandgap compared to SiC and GaN are thus appealing for high voltage pn diodes and transistors. Additionally, the formation of AlGaN-based heterojunctions and the utilization of polarization fields offer design options not possible for devices based on materials such as SiC and diamond. Here we report on the growth and performance of pn diodes fabricated from Al0.30Ga0.70N (Eg=4.1eV) and Al0.74Ga0.26N (Eg=5.3eV) alloys, illustrating the potential for AlGaN alloys as a viable material for next-generation power diodes. Quasi-vertical pn diodes consisting of Al0.30Ga0.70N epilayers were grown by metalorganic vapor phase epitaxy on 1.3 mm thick sapphire substrates. The added stiffness of such thick sapphire substrates (3x thicker than typical sapphire) reduces wafer bow and eliminates cracking in epitaxial structures up to 19 μm thick. Thick epitaxial structures are needed to achieve the > 4 microns thick drift layers necessary for multi-kilovolt breakdown voltages. A series of pn diode structures were grown where the thickness of the lightly doped drift layer (No = 2-5x1016 cm-3) was varied from 4.3 to 11 μm. All structures were completed with a 0.35 μm thick Mg-doped Al0.30Ga0.70N p-layer followed by a compositional grade to a p-GaN contact layer. Diodes employed a junction edge termination structure around the p-contact to reduce the peak electric field at the contact metal to avoid premature breakdown. Breakdown voltages from 1600 to 3000V were achieved in reverse bias and a forward turn-on voltage of 6 to 8 volts was recorded. To our knowledge, this is the first vertical AlGaN-based pn diode exhibiting a breakdown voltage in excess of 1 kilovolt. The differential specific on-resistance was higher than expected based on consideration of the drift region only (typically 16-20 mΩ-cm2), which is tentatively attributed to the resistance due to lateral current spreading in these front-contacted, quasi-vertical diodes. An effective critical electric field of 5.9 MV/cm was determined from the reverse current-voltage characteristics based on a punch-through, as dictated by the doping and thickness of the drift region. We have also investigated quasi-vertical pn diodes consisting of Al0.74Ga0.26N epilayers to exploit the expected higher critical electric field in higher aluminum mole fraction alloys. These diodes consisted of 4.5 μm thick AlN epilayers grown on sapphire followed by a heavily doped n-type contact layer. Next a lightly doped (No = 2-4x1016 cm-3) 5 or 8 μm thick drift layer was grown. The combination of a thick AlN buffer and Al0.74Ga0.26N layers resulted in x-ray diffraction linewidths of 164-197 (237–284) arc seconds for the (0002) and (10-12) reflections for the drift layer, respectively. By optimizing the growth conditions used for the drift layer, the density of electron compensating defects can be reduced to ~ 1x1016 cm-3 — a level reported for GaN pn diodes. Unlike GaN diodes where drift layer doping at mid to low 1015 cm-3 is necessary for breakdown voltages of several kilovolts, the free electron concentration in these Al0.74Ga0.26N pn diodes is significantly higher than the level of compensation, making doping much easier to control and illustrating the benefit of higher critical electric field. The drift layer was followed by p-type AlGaN and finally a compositional grade to a p-GaN contact layer. It is the p-AlGaN layer that is a significant challenge in Al-rich pn diodes. Unlike pn diodes based on Al0.30Ga0.70N epilayers, simple homojunction pn diodes are not practical in Al-rich AlGaN alloys due to the low hole concentration owing to the very deep (Ea > 400 meV) acceptor level. Consequently, other approaches must be considered for hole transport to the pn junction. We will report on the current-voltage characteristics of pn heterojunction diodes where a Mg-doped p-type Al0.30Ga0.70N layer is grown on the n-type Al0.74Ga0.26N drift layer. Additionally, the current-voltage characteristics of pn diodes where holes are generated in the p-region by field ionization of Mg acceptors will also be presented. Finally, practical pn diodes require specific on-resistance lower than what is inherent for front-contacted quasi-vertical device architectures grown on insulating substrates. We will report an approach that has realized vertically conducting AlGaN pn diodes employing AlGaN overgrowth on conducting GaN substrates.

4H-SiC is a promising material for low-loss, high frequency, and high temperature electronic devices. And nowadays, 4H-SiC Schottky diodes, MOSFETs, and its inverters were used in many applications. As well known, a conduction loss and a switching loss shows tread off relationship on these devices. Schottky diode shows high speed switching action and small recovery current based on its unipolar operation, but high series resistance of drift layer. On the other hand, PiN diode shows low series resistance of drift layer due to its conductivity modulation phenomenon based on the bipolar action. However, it causes an adverse reverse recovery current and limited switching speed. To break this tread off relationship, Schottky-PN diode structure so-called SPND or SNPD was proposed with a diamond semiconductor [1]. This diode has a structure with a low doped n- or p- drift layer where is sandwiched and completely depleted with Schottky junction and one side PN junction. Under forward bias condition, barrier height of PN junction is reduced and majority carrier was injected into the drift layer completely depleted with Schottky junction. Injected majority carrier drift to Schottky junction without recombining with minority carrier. It means minority carrier dose not contribute to current flow under forward bias. Then, this SPND structure is expected to show both very low on-resistance and high speed switching action. Under reverse bias condition, blocking voltage is shared throughout the drift layer. However, the diamond semiconductor material is under development and difficult to use production phase. In this study, we demonstrated the possibility of SPND by using 4H-SiC substrate under mass production. In this study, we grew low doped p-layer on n+ 4H-SiC C-face substrate by using hot-wall chemical vapor deposition (CVD) system with H2-SiH4-C3H8 gas system. Trimethylaluminum (TMA) was used as p-type dopant source. The thickness and doing concentration of grown p- layer is 1.1 μm and 5 x 1014 cm-3. Pt was evaporated in vacuum as Schottky electrode on as grown surface. The diameter of Schottky contact is 1mm. Al was used as ohmic back contact. The schematic cross-sectional structure of fabricated 4H-SiC SPND is shown inset of Figure 1. Figure 1 shows typical J-V characteristic of fabricated 4H-SiC SPND at room temperature. Good rectifying characteristic was observed. The blocking voltage of 300 V was obtained (Fig. 1(a)). From this result, we estimated dielectric breakdown field value of 2.5 MV/cm which is almost equal to ideal value of 4H-SiC one. On forward bias characteristic, the current raises at 2.2 V and the current density is reached at 1200 A/cm2 at 2.4 V (Fig. 1(b)). From this value, the differential on-resistance was estimated at 0.18 mΩcm2. In this study, we used 4H-SiC substrate with thickness of 200 μm and resistivity of 20 mΩcm. The calculated series on-resistance of 4H-SiC substrate part was estimated as 0.4 mΩcm2. This result means estimated differential on-resistance of 0.18 mΩcm2 is almost the resistance of substrate and the resistance of drift layer dose not contribute to the series resistance. These results mean 4H-SiC SPND structure was realized and its good performance of low on-resistance with high blocking voltage was confirmed. Details will be shown in this presentation.

We demonstrate the first GaN vertical transistor on silicon, based on a 6.7- <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\mu \text{m}$ </tex-math></inline-formula> -thick n-p-n heterostructure grown on 6-inch silicon substrate by metal organic chemical-vapor deposition. The devices consist of trench-gate quasi-vertical metal–oxide–semiconductor field-effect transistors with a 4- <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\mu \text{m}$ </tex-math></inline-formula> -thick drift layer, exhibiting enhancement-mode operation with a threshold voltage of 6.3V and an ON/OFF ratio of over 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">8</sup> . A high OFF-state breakdown voltage of 645 V along with a specific ON-resistance of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$6.8~\textsf {m}\Omega \cdot \textsf {cm}^{{\textsf {2}}}$ </tex-math></inline-formula> were achieved thanks to the high-quality 4- <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\mu \text{m}$ </tex-math></inline-formula> -thick GaN drift layer, presenting a relatively low defect density and very high electron mobility (720 cm <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$^{{\textsf {2}}}/\textsf {V}\cdot \textsf {s}$ </tex-math></inline-formula> ). This excellent performance represents a major step toward the realization of high-performance GaN vertical power transistors on low-cost silicon substrates.

Optimal design of pseudo-vertical Schottky diode with n-type junction terminal extension structure

The development of processes for epitaxial growth of vertical gallium nitride (GaN) drift layers enabling 1.2 kV breakdown voltage on low‐cost sapphire substrates is presented in comparison to GaN bulk substrates. The targeted blocking capability demands drift layers with a thickness of 10 μm and low but controllable n‐type doping. Using a growth rate of 2.5 μm h−1 the concentration of unintentionally incorporated carbon is sufficiently low to adjust the n‐type carrier concentration to ≈1 × 1016 cm−3 for all types of substrates. To assess GaN drift region properties in terms of forward bias conductivity and reverse bias blocking strength, a quasi‐vertical p‐n‐diode structure is utilized. Bow reduction of GaN‐on‐sapphire structures is achieved using a stealth laser scribing process. Breakdown voltages higher than 1600 V and a specific on‐state resistance as low as 0.7 mΩ cm2 are obtained with diodes fabricated on GaN substrates. Similar structures grown on sapphire show breakdown voltages of about 1300 V due to higher levels of current leakage. Comparing different types of substrates, a direct correlation between dislocation density in the drift layer with the leakage current in p‐n diodes is deduced.

Body: Newly emerged wide bandgap semiconductor (WBG) β-Ga2O3 has been extensively researched for power electronics, RF electronics and optoelectronics due to its large bandgap of 4.7- 4.9 eV and high breakdown field of ~ 8 MV/cm. Due to the absence of p-type Ga2O3, most of demonstrated β-Ga2O3 devices are unipolar devices such as high electron mobility transistors (HEMTs) and Schottky barrier diodes. To overcome this limitation, other p-type materials, such as GaN and NiO, have been investigated to produce Ga2O3 based p-n heterojunctions. Among these p-type materials, p-GaN has attracted especial interests since GaN is also a WBG semiconductor and has a clear crystallographic relationship to β-Ga2O3 for epitaxial growth. In addition, both β-Ga2O3 and GaN can be produced in the industrial standard tools, i.e., the metalorganic chemical vapor deposition (MOCVD). The growth of high-quality GaN on Ga2O3 by MOCVD has been recently reported. β-Ga2O3/GaN p-n heterojunction via mechanically exfoliation also showed decent rectifying behaviors. However, the breakdown capability of the β-Ga2O3 based p-n heterojunctions is still far from expectations due to the lack of effective edge terminations. Here we design and simulate mesa based edge terminations for the vertical β-Ga2O3/GaN p-n heterojunctions using SILVACO TCAD simulator. The model was first calibrated by the experimental results, including the conduction and valance band offsets of the heterojunction and electrical properties. The device structure consisted of n+-Ga2O3 n-contact layer, 5 µm unintentionally doped (UID) β-Ga2O3 drift layer and 500 nm p-GaN layer. The ideal breakdown voltage (BV) of the heterojunction was 1.37 kV, while the BV of the reference device without effect mesa edge termination dropped dramatically to 300 V due to the electric field crowding at the device edge. Therefore, it is critical to design and optimize the mesa edge termination to improve the BV of the β-Ga2O3/GaN p-n heterojunctions. Three mesa edge termination structures were investigated in this work: beveled mesa, step mesa, and deeply-etched mesa. The beveled mesa angle θ is the key parameter in determining the device BV. When θ was varied from 15° to 90°, the highest BV of 1224 V was obtained for θ =15°. For the step mesa edge termination, the width (W), depth (D), and the number of steps define the mesa structure. It was found that the BV of the devices increased with increasing number of steps. The combination of (W, D) values of (0.5,0.5) and (0.5,1.0) and (1.0,1,0) was investigated, where all the values are in µm. The highest value was obtained for W = 0.5µm, D = 1.0µm and the number of steps = 5. Smaller W and larger D led to better BV. The electric field distributions of devices with different mesa edge terminations were compared at –300V. Without effect mesa edge termination, the peak electric field at the junction edge was ~ 4.2 MV/cm. By incorporating the mesa edge termination techniques, the electric field crowding at the device edge was mitigated, and the peak electric fields were reduced to 1.8 MV/cm and 2.4 MV/cm for the beveled and step mesa edge terminations, respectively. For the deeply-etched mesa structure, it was found that a more uniform electric field distribution was observed when the mesa depth was increased from 0.5,1.0, 2.0, to 3.0 µm, where the peak electric fields were decreased from 2.1, 1.8 ,1.5 to 1.2 MV/cm, respectively. In summary, this work presents a comprehensive design and optimization of mesa edge terminations for the wide bandgap vertical β-Ga2O3/GaN p-n heterojunctions, which is first of its kind. Three mesa structures were explored, including beveled mesa, step mesa and deeply-etched mesa. It was found that these mesa edge terminations can alleviate the electric field crowding at the junction edge and increase the device BV. This work can provide critical guidance for the development of high-performance β-Ga2O3 based bipolar high voltage and high power devices.

We have demonstrated a vertical GaN-on-Si p-n diode with breakdown voltage (BV) as high as 839 V by using a low Si-doped strained layer superlattice (SLS). The p-n vertical diode fabricated by using the n−-SLS layer as a part of the drift layer showed a remarkable enhancement in BV, when compared with the conventional n−-GaN drift layer of similar thickness. The vertical GaN-on-Si p-n diodes with 2.3 μm-thick n−-GaN drift layer and 3.0 μm-thick n−-SLS layer exhibited a differential on-resistance of 4.0 Ω · cm2 and a BV of 839 V.

This work presents the electrostatic analysis of a novel Ga <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> vertical Schottky diode with three different guard ring (GR) configurations to reduce the peak electric field at the metal edges. Highly doped p-type GaN, p-type nonpolar AlGaN, and polarization-doped graded p-AlGaN are simulated and analyzed as the GR material, which forms a heterojunction with the Ga <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> drift layer. GR with nonpolar graded p-AlGaN with a bandgap larger than Ga <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> is found to show the best performance in terms of screening the electric field at the metal edges. The proposed GR configuration is also compared with a reported Ga <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> Schottky diode with no GR and a structure with high-resistive nitrogen-doped GR. The optimized design is predicted to have a breakdown voltage as high as 6.2 kV and a specific ON-resistance of 3.55 mΩ-cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> , which leads to an excellent power figure of merit of 10.8 GW/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> .

On the basis of traditional quasi-vertical GaN/Si gate field-effect transistors, a vertical deep trench structure is introduced to reduce the on-state resistance (Ron) of the device. The thickness and doping concentration of the drift layer are discussed, and the deep trench structure is introduced to increase the breakdown voltage electric field intensity. TCAD software is used to design and optimize the device. Finally, the optimized drift layer thickness is 12µm, and the doping concentration is 5×2<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">15</sup>cm<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">−3</sup>. The final device achieves a lower on-state resistance R<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">on</inf>=1.59m Ω. cm<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup>, a higher breakdown voltage V<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">Br</inf>=1645V, and a figure of merit FOM=1.70 GW.cm<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">−2</sup>. Additionally, the GaN/Si VDMOS device combines mature Si process technologies to enable the formation of high-quality ohmic contacts. Therefore, in contrast to Si-based GaN devices, this structure allows for the use of mature Si process technologies in gate oxide and ohmic contact.

This work, for the first time, experimentally demonstrates a TCAD-Machine Learning (TCAD-ML) framework to assist the analysis of device-to-device variation and operating (ambient) temperature without the need of physical quantities extraction. The ML algorithm used in this work is the Principal Component Analysis (PCA) followed by third order polynomial regression. After calibrated to limited `expensive' experimental data, `low cost' TCAD simulation is used to generate a large amount of device data to train the ML model. The ML was then used to identify the root cause of device variation and operating temperature from any given experimental current-voltage (I-V) characteristics. We applied this framework to study the ultra-wide-bandgap gallium oxide (Ga2O3) Schottky barrier diode (SBD), an emerging device technology that holds great promise for temperature sensing, RF, and power applications in harsh environments. After calibration, over 150,000 electrothermal TCAD simulations are performed with random variation of physical parameters (anode effective work function, drift layer doping, and drift layer thickness) and operating temperature. An ML model is trained using these TCAD data and we found 1,000-10,000 TCAD data can train an accurate machine. We show that without physical quantities extraction, performing PCA is essential for the TCAD trained ML model to be applicable to analyze experimental characteristics. The physical parameters and temperatures predicted by the ML model show good agreement with experimental analysis. Our TCAD-ML framework shows great promise to accelerate the development of new device technologies with a significantly more efficient process of material and device experimentation.

A novel self-aligned process for high cell density trench gate power MOSFETs with only four mask layers was proposed. The specific on-resistance can be as low as 0.21 m/spl Omega/.cm/sup 2/ With 1.5 /spl mu/m cell pitch and 35 V breakdown voltage. Because this process shrinks trench space but not trench width, the quasi-saturation phenomenon is lighter. After optimization of the thickness of n- drift layer and n+ substrate, a specific on-resistance lower than 0.1 m/spl Omega/.cm/sup 2/ with 0.6 /spl mu/m technology could be expected.

Power devices (PD) are ubiquitous elements of the modern electronics industry that must satisfy the rigorous and diverse demands for robust power conversion systems that are essential for emerging technologies including Internet of Things (IoT), mobile electronics, and wearable devices. However, conventional PDs based on “bulk” and “single-crystal” semiconductors require high temperature (> 1000 °C) fabrication processing and a thick (typically a few tens to 100 μm) drift layer, thereby preventing their applications to compact devices, where PDs must be fabricated on a heat sensitive and flexible substrate. Here we report next-generation PDs based on “thin-films” of “amorphous” oxide semiconductors with the performance exceeding the silicon limit (a theoretical limit for a PD based on bulk single-crystal silicon). The breakthrough was achieved by the creation of an ideal Schottky interface without Fermi-level pinning at the interface, resulting in low specific on-resistance Ron,sp (< 1 × 10–4 Ω cm2) and high breakdown voltage VBD (~ 100 V). To demonstrate the unprecedented capability of the amorphous thin-film oxide power devices (ATOPs), we successfully fabricated a prototype on a flexible polyimide film, which is not compatible with the fabrication process of bulk single-crystal devices. The ATOP will play a central role in the development of next generation advanced technologies where devices require large area fabrication on flexible substrates and three-dimensional integration.

We propose a new edge termination technique for high-voltage vertical GaN power devices using boron-ion implantation into a p-GaN epitaxial layer. The boron-implanted layer after annealing at 800 °C results in a half-conductive p-type layer that is applicable to junction termination extension (JTE). Fabricated vertical p-n diodes with the JTE layers show substantial increase in breakdown voltage (BV) via tuning of the boron concentration. The JTE length dependence of the BV and photoemission location demonstrate that the electric field relaxation near the edge can be controlled by the boron implantation conditions. High avalanche current immunity and positive temperature dependence of the BV are observed for the optimal structure. The maximum BV of 1400 V is near an ideal value for the donor concentration in the drift layer. The proposed JTE technique can be a strong candidate for robust power devices.

The integration of a solid state gas sensor of the metal oxide sensor type into CMOS technology still is a challenge because of the high temperatures during metal oxide annealing and sensor operation that do not comply with silicon device stability. In the presence of an external electric field sensor sensitivity can be controlled through a change of the Fermi energy level and consequently it is possible to reduce the operation temperature. Based in this effect, a novel field effect gas sensor was developed resembling a reversed insulated gate field effect transistor (IGFET) with the thickness of gas sensing layer in the range of the Debye length (LD). Under these conditions the controlling electrical field reaches the sensitive surface and a modulation of the Fermi energy level occurs, producing an effective control of gas sensitivity and sensor response. In this paper several aspects are treated, like technological fabrication process, complete sensor characterization by means of an electrical model and sensor response measurements. Other effects as base‐line drift effects and layer thickness implications also are studied. (© 2009 WILEY‐VCH Verlag GmbH &amp; Co. KGaA, Weinheim)

In this talk, metalorganic chemical vapor deposition (MOCVD) development of GaN-on-GaN targeting for vertical power devices will be presented. To achieve vertical GaN PN diodes with high breakdown voltage (Vbr) and low on resistance (Ron), it is critical to develop thick GaN drift layer with low controllable doping (Nd-Na) and high electron mobility. Key impurities in MOCVD GaN serving as charge compensation centers were identified. For example, mechanisms of Fe incorporation in MOCVD GaN were identified and addressed [1]. Source of C incorporation is mainly from metalorganic precursor (TMGa), and the C concentration in GaN is highly dependent on MOCVD growth condition, particularly the growth rate. Typically, as GaN growth rate increases, C incorporation increases undesirably. To address this key challenge for achieving high quality thick GaN drift layer, we developed a laser-assisted MOCVD (LA-MOCVD) growth technique to enable fast GaN epitaxy while suppressing C incorporation. The effects of LA-MOCVD GaN growth parameters on GaN growth rate, impurity incorporation and charge transport properties will be discussed. GaN PN diodes with breakdown voltage ~ 3kV are demonstrated.This talk will also discuss our recent developments of ultrawide bandgap (UWBG) Ga2O3, (AlxGa1-x)2O3, and heterostructures [2-5]. Challenges and opportunities for developing (AlxGa1-x)2O3 on Ga2O3 substrates with different crystal orientations ((010), (100), (-201)) be discussed. Band offsets between AlGaO/GaO heterostructures were determined based on high quality epitaxy of AlGaO/GaO heterostructures. Experimental results agree very well with the values predicted from theoretical density functional theory (DFT). Growth techniques based on MOCVD and low pressure chemical vapor deposition (LPCVD) will be compared and discussed. Acknowledgement: The authors acknowledge the funding support from Advanced Research Projects Agency-Energy (ARPA-E) DE-AR0001036, U.S. Department of Energy's Office of Energy Efficiency and Renewable Energy (EERE) under the Advanced Manufacturing Office, FY18/FY19 Lab Call, the Air Force Office of Scientific Research FA9550-18-1-0479 (AFOSR, Dr. Ali Sayir) and the National Science Foundation (1810041, 1755479, 2019753). [1] Y. Zhang, Z. Chen, W. Li, H.-S. Lee, M. R. Karim, A. R. Arehart, S. A. Ringel, S. Rajan, H. Zhao, J. Appl. Phys., 127, 215707, 2020.[2] Z. Feng, A F M A. U. Bhuiyan, M. R. Karim, H. Zhao, Appl. Phys. Letts., 114, 250601, 2019.[3] A F M A. U. Bhuiyan, Z. Feng, J. M. Johnson, Z. Chen, H. -L. Huang, J. Hwang, H. Zhao, Appl. Phys. Lett., 115, 120602, 2019.[4] A F M A. U. Bhuiyan, Z. Feng, J. M. Johnson, H.-L. Huang, J. Sarker, M. Zhu, M. R. Karim, B. Mazumder, J. Hwang, and H. Zhao, APL Materials, 8, 031104, 2020.[5] A F M A. U. Bhuiyan, Z. Feng, J. M. Johnson, H.-L. Huang, J. Hwang, and H. Zhao, Appl. Phys. Letts, 117, 252105, 2020.