- Conference Article
- 10.1117/12.2071507
GeSi photonics for telecommunication applications
- Nov 13, 2014
- Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE
- Papichaya Chaisakul + 6 more +6
We experimentally and theoretically investigate GeSi-based photonics for future on-chip optical interconnect on bulk Silicon substrates with dense wavelength division multiplexing (WDM) system. We experimentally show that Ge-rich Si<sub>1-x</sub>Ge<sub>x</sub> can be used as both a passive low loss waveguide and a substrate to facilitate low-temperature epitaxial growth of Ge-based active devices working at low optical loss wavelength of Ge-rich Si<sub>1-x</sub>Ge<sub>x</sub> waveguides. We also theoretically discussed the possibilities to realize a compact passive component based on Ge-rich Si<sub>1-x</sub>Ge<sub>x</sub> material system on bulk Si wafer. From simulation the system based on Ge-rich Si<sub>1-x</sub>Ge<sub>x</sub> waveguide and the Si<sub>1-y</sub>Ge<sub>y</sub> (y < x) lower cladding layer is good enough to ensure compactness of important on-chip photonic components including passive waveguide and GeSi-based array waveguide grating (AWG). The small refractive index contrast between Ge-rich Si<sub>1-x</sub>Ge<sub>x</sub> waveguide and the Si<sub>1-y</sub>Ge<sub>y</sub> lower cladding layer potentially avoid the polarization dependent loss and detrimental fabrication tolerance of WDM system. Our studies show that GeSi-based photonics could uniquely provide both passive and active functionalities for dense WDM system.
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