Progress in self-quenching InP-based single photon detectors

Single photon avalanche diodes (SPADs) are a key underpinning technology to many existing and emerging applications, including LIDAR for 3D imaging as well as quantum imaging, quantum encryption and quantum information applications. There is a growing demand for low-cost LIDAR systems for autonomous vehicles, particularly in the short-wave infrared (SWIR) spectral range, which enables long-range measurements whilst complying with eye-safety regulations and offers enhanced transmission through atmospheric obscurants like smoke and haze compared to systems operating in the near-infrared. Furthermore, for quantum-key distribution, single photons must be measured at telecoms wavelengths for compatibility with optical fibre networks. Ge-on-Si SPADs offer significant potential for low-cost SWIR single photon detection, with the ability to meet the price points required for these large emerging markets thanks to Si foundry compatibility. This contrasts with state-of-the-art SWIR SPADs based on InGaAs/InP, which are not only expensive but suffer from the effects of afterpulsing.Here, we present an overview of our work on the design, fabrication and characterisation of pseudo-planar Ge-on-Si detectors, with both operation in the Geiger mode (i.e. SPADs), as well as linear mode for avalanche photodiodes (APDs). The pseudo-planar SPAD design resulted in a step-change in performance compared to mesa-based SPADs, leading to high single-photon detection efficiencies (SPDEs) of 38 % at 1310 nm wavelength, and ultimately low noise equivalent powers of 7.7x10-17 W/Hz0.5 in 26 µm diameter pixels at 125 K, with single photon detection demonstrated up to 165 K. This was achieved by local ion-implantation of a charge-sheet layer, used to mediate the electric field between the Si avalanche layer and the Ge absorber, which in conjunction with a local p+Ge etched contact layer enabled a reduced E-field at etched sidewalls. These devices demonstrated over 100 X improvement in NEP compared to the most comparable Ge-on-Si mesa devices, and showed reduced afterpulsing compared to commercial InGaAs/InP devices when run in nominally identical operating conditions.In order to further optimise the technology, and gain insight into the device dynamics, we have simulated SPADs using TCAD process and device simulators, and developed custom-code to solve triggering probabilities using McIntyre’s model to understand the sensitivities of the detectors to the device design. Simulations are compared to experimental DCR measurements to probe sensitivities to surface passivation and geometry scaling and reveal that surfaces do not appear to be the limiting factor on performance, therefore validating the pseudo-planar architecture. Furthermore, with these simulation techniques, we have investigated potential enhancements achievable by the inclusion of an etched photonic crystal nano-hole array, which is known to enhance absorption and will therefore enhance SPDE. Here, we demonstrate the design trade-offs between enhanced SPDE performance, and the degradation of DCR that can be induced by etching surfaces into the device active area.Finally, we present recent results on surface normal Ge-on-Si APDs using the pseudo-planar architecture in devices with 2 µm thick Ge absorbers. Here, the benefits of the device architecture are demonstrated to be applicable to high performance in the linear mode. Devices are measured at room-temperature, and demonstrate ~0.40 A/W responsivity at unity gain at 1550 nm wavelength, with a maximum avalanche gain of ~100, and excess noise of 3.1 at a gain of 20; to our knowledge a record for any Ge-on-Si APD.

Effects of the different etching techniques have been investigated by analyzing electrical and optical characteristics of two-types of single-diffused single photon avalanche diodes (SPADs). The fabricated two-types of SPADs have no diffusion depth variation by using a single diffusion process at the same time. The dry-etched SPADs show higher temperature dependence of a breakdown voltage, larger dark-count-rate (DCR), and lower photon-detection-efficiency (PDE) than those of the wet-etched SPADs due to plasma-induced damage of dry-etching process. The results show that the dry etching damages can more significantly affect the performance of the SPADs based on a single recess-etching process.

Single photon avalanche diodes (SPADs) manufactured through the standard CMOS process have a major advantage in reducing the cost and expendability in comparison with the SPAD made with the custom process. SPAD is a single photon sensitive diode using the avalanche phenomenon and operated in Geiger-mode which applies a voltage higher than the breakdown voltage of the device. Therefore, SPAD is exposed to a higher voltage than other devices and has a high electric field in the multiplication region. In SPAD operating with such a high electric field, the guard ring prevents edge breakdown and serves to focus the electric field on the intended multiplication region. Therefore, the optimized guard ring structure is required for the high efficiency SPAD designs. The deep virtual guard ring is designed to cope with deeper multiplication regions formed by deep n-well and p-well, thus providing higher photon detection probability (PDP) and enhanced response at a longer wavelength. In this paper, the four possible Silicon-based SPAD candidates of different deep virtual guard rings formed by the combination of shallow trench isolation (STI) and p-substrate layer fabricated through standard CMOS process are investigated and their electric characteristics of the SPAD, such as the current-voltage (I-V) characteristic, and optical characteristics, such as dark count rate (DCR), and PDP, are measured. In addition, TCAD simulations are used to verify the characteristic variation by analyzing the electric field profiles. Based on the results, the optimized structure of the SPAD with the deep virtual guard ring can be proposed.

In many fields and in particular in astrophysical observations, a chronic problem is the photon-starving condition, which becomes severe when images are to be obtained in short acquisition times (from micro to milliseconds), as happens in hot areas of astrophysics: optical counterparts of high-energy gamma-ray bursts, study and interpretation of Supernovae bursts. CCDs are inherently unable to provide accurate measurements of such fast low-intensity transients at high frame rates. To respond to single photons, suitable detectors must provide output signals that are sufficiently high to be individually processed by electronic circuits. Therefore, only detectors with an internal mechanism that provides a high multiplication of charge carriers are suitable, namely vacuum tube photomultipliers (PMTs), solid-state avalanche photodiodes (APDs) and electron-multiplying CCDs (EMCCDs). In PMTs, the photocathodes available for the visible spectral range provide fairly good quantum efficiency and low noise, whereas cathodes for the red and near-infrared range have lower quantum efficiency and must be cooled to reduce the dark-count rate. PMTs are bulky, and so not suitable for assembly in large arrays, fragile, sensitive to electromagnetic disturbances and mechanical vibrations, require high supply voltages (1–2 kV) and are costly devices, particularly the high-performance models. EM-CCDs exploit an internal multiplication process to achieve sub-electron readout noise, thus being able to detect single photons. Their quantum efficiency is very high, and they are inherently suited to imaging applications. However, due to their readout technique, they cannot provide frame rates higher than a few kilo-frames per second, and cannot be used in extreme timeresolved measurements. Single photons can be detected efficiently by avalanche diodes operating in Geiger mode, known as Single-Photon Avalanche Diodes (SPADs). Avalanche photodiodes have the typical advantages of solid state devices (small size, low bias voltage, low power consumption, ruggedness and reliability, suited to building integrated systems). In the last few years, a new kind of planar semiconductor device has slowly but steadily come out, namely the silicon photomultiplier (SiPM), with promising features that, in some respect, could even replace traditional photomultiplier tubes (Kovaltchouk et al, 2005). Based on a Geiger mode avalanche photodiode elementary cell, it consists of an array of n

The integrated circuit design of Single Photon Avalanche Diode (SPAD) with quenching circuit in CMOS is highly desirable photon detection at high rates, but low counting rates constrain image acquisition rates and dynamic range. The characterization should primarily define the dead time of quenching SPAD circuit in order to estimate the SPAD performance prior fabrication. This paper reports the development and characterization of the mathematical model SPAD on passively quenched SPAD circuit with ballast resistor. An improved model in defining the dead time (tD) response for SPAD is used to characterize the performance of 8×1 passively quenched SPAD array. The time response for both quenching and recharging time are developed for 180 nm depletion layer which means low voltage technology. Hence that, the 8×1 passively SPAD array circuit is designed by using Silterra 180nm CMOS technology for uncorrelated time measurements with on-chip 4-bit counter to improve the counting rate. The passive quenching circuit design on-chip would enable the capability to perform at higher speed, which is more than 100 kHz. In addition, are presented in this paper.

We study the possibility to use Single Photon Avalanche Diodes (SPADs) optically coupled to scintillating fibers as a novel type of gamma-ray detector for space applications. SPADs are silicon devices operating under polarization conditions above the junction breakdown voltage (typical overvoltage of 5V), for which a single photon interacting in the active region is sufficient to trigger a self sustainable avalanche discharge. SPADs can thus be used for the detection of very low light levels with an absolute timing accuracy of about 30 ps for single photon detection, without spectroscopic capabilities. In this presentation we report the preliminary results on large area SPAD (actual results refers to SPADs having 200 μm diameter, with the aim to grow up to 500 μm SPADs) coupled to scintillating fibers as the basic module for a particle tracker for space application. Dark counts rate as low as few tens of kHz at room temperature, lowering down to few kHz at -10°C have been obtained for the 200 μm devices, in accordance with the basic requirements for the proposed application. Similar instruments based on silicon photomultiplier (SiPM) readout have already been studied, but none based on SPAD has been realized up to now. Moreover, since very few information is available on SPADs for the use in a space environment, we performed bulk damage and total dose radiation tests with protons and gamma-rays in order to evaluate their radiation hardness properties and their suitability for application in a Low Earth Orbit (LEO) space mission. With this aim the SPAD devices have be irradiated using up to 20 krad total dose with gamma-rays and 5 krad with protons.

Single Photon Avalanche Diodes (SPADs) are avalanche photodiodes specifically designed for reverse bias operation above the breakdown voltage (Geiger-mode operation), and used for detecting single optical photons. Studies were performed to relate the attainable timing resolution to the device geometry and operating conditions. A new silicon device structure was designed in order to obtain improved timing performance with respect to previous SPADs. Extensive tests were carried out in order to ascertain the timing resolution of the device in time-correlated photon counting. The SPAD timing resolution, in terms of its full-width at half­maximum (FWHM) contribution to the overall instrumental response width, is 20 ps with the detector cooled to -65 C, and 28 ps at room temperature. This is the highest resolution so far reported for solid-state single-photon detectors. Among vacuum tubes, comparable results are obtained only with special microchannel-plate photomultipliers (MCP-PMT). With the excellent timing resolution of the SPAD and the well-known advantages of Time Correlated Photon Counting systems (high sensitivity, linearity etc.), various applications are foreseen in areas so far dominated by streak cameras.

A time-gated 4×128 Single Photon Avalanche Diode (SPAD) line array with a 512-channel Time-to-digital converter (TDC) has been designed and fabricated in a 0.35 μm high voltage CMOS technology for pulsed Raman spectroscopy. In Raman spectroscopy the SPAD array can be designed as a line array with a high fill factor because electronics can be designed on either side of the SPAD array. In this paper cross talk measurements of the array have been carried out to investigate the probability of the cross talk between adjacent SPADs in an array with high density. Measurements showed a cross talk probability of 0.11% with a pitch of adjacent SPADs of 32 μm. In addition, the largest probability of the cross talk was measured to occur with a short delay.

Improvements on InGaAs/InP Single Photon Avalanche Diodes (SPADs) make them very promising for many NIR single-photon counting applications. In order to fully exploit such detectors, it is mandatory to operate them in optimized working conditions and in association with proper front-end electronics. New InGaAs/InP SPADs provide low dark-count rate at moderately low temperatures. They also show good photon detection efficiency and quite low time jitter in the near-infrared range. We report and compare the performance of two generations of InGaAs/InP SPADs working at 1550 nm.

In this paper, we describe the design, characterization, and modeling of InGaAsP/InP avalanche diodes designed for single photon detection at wavelengths of 1.55 and 1.06 mum. Through experimental and theoretical work, we investigate critical performance parameters of these single photon avalanche diodes (SPADs), including dark count rate (DCR), photon detection efficiency (PDE), and afterpulsing. The models developed for the simulation of device performance provide good agreement with experimental results for all parameters studied. For 1.55-mum SPADs, we report the relationship between DCR and PDE for gated mode operation under a variety of operating conditions. We also describe in detail the dependence of afterpulsing effects on numerous operating conditions, and in particular, we demonstrate and explain a universal functional form that describes the dependence of DCR on hold-off time at any temperature. For 1.06-mum SPADs, we present the experimentally determined relationship between DCR and detection efficiency for free-running operation, as well as simulations complementing the experimental data.

Vacuum based devices, such as Photo Multiplier Tubes (PMT) and Micro Channel Plates (MCP), have been for many years the sensors of choice for most applications calling for photon counting and timing (Renker, 2004). While providing very good sensitivity, noise and timing characteristics, these photodetectors feature a number of disadvantages: they are bulky, fragile, and sensitive to magnetic fields; they require very high operation voltages, and have large power consumption; in their high-performance models, providing good spatial resolution, they are still very expensive. For high-sensitivity imaging applications, suitable solutions are represented by CCD cameras coupled with either MCP Image Intensifiers (I-CCDs) or Electron Multipliers (EM-CCDs) (Dussault & Hoess, 2004). However, besides being very expensive, their performance is not completely satisfactory in extreme time resolved measurements. For reasons of cost, miniaturization, ruggedness, reliability, design flexibility, integration density, and signal processing capabilities, a fully solid-state solution (and, particularly, CMOS technology) would be highly desirable. Among the advanced CMOS image sensors so far reported, the most promising ones in terms of high sensitivity and fast timing are those based on Single Photon Avalanche Diodes (SPADs). SPADs are avalanche photodiodes operated in the so-called Geiger mode, i.e., biased above breakdown, so as to be sensitive to single photons (Cova et al., 1996). Although these sensors have been developed for more than 30 years, in particular owing to the group of Prof. Cova at Politecnico di Milano, and single devices have reached outstanding performance (Ghioni et al., 2007), only recently the perspective of making a SPAD-based camera has become feasible. The first SPAD-based pixel arrays in CMOS technology have been demonstrated only a few years ago (Rochas et al., 2003a), but since then further developments rapidly followed, also facilitated by the availability of commercial, High-Voltage CMOS technologies (HV-CMOS) aimed at integrated circuits for power electronics, as well as of specially tailored “imaging” processes, which have been boosted by the huge market of

Silicon photomultipliers (SiPMs) are arrays of many single-photon avalanche diodes (SPADs), all connected in parallel. Each SPAD is sensitive to single photons and the SiPM gives an output proportional to the number of detected photons. These sensors are becoming more and more popular in different applications, from high-energy physics to spectroscopy, and they have been significantly improved over last years, decreasing the noise, increasing the cell fill-factor (FF) and thus achieving very high photon-detection efficiency (PDE). In FBK (Trento, Italy), we developed new SiPM technologies with high-density (HD) and, more recently, ultra-high-density (UHD) of cells (i.e. density of SPADs). These technologies employ deep-trenches between cells, for electrical and optical isolation. As an extreme case the smallest-cell, SiPM, i.e. with 5μm cell pitch, has about 40000 SPADs per squared millimeter. Such small SPAD dimensions gives a significantly high dynamic range to the SiPM. These small-cells SiPM have a lower correlated noise (including lower afterpulsing probability) and a faster recharge time (in the order of few nanoseconds), and they also preserve a very good detection efficiency (despite the small SPAD dimension).

Silicon photomultiplier (SiPMs) is a photon counting device that consists of single photon avalanche diodes (SPADs) arrays being operated at a Geiger mode and has been widely used in many kinds of application including high-energy physics, confocal laser scanning microscopy (CSLM), flow cytometry, and light detection and ranging (LiDAR) instead of photomultiplier tube (PMT). Trench structures basically places at the boarder of every SPAD to guard optical and electrical crosstalk. However, illuminating photons to the trench region restricted the performance of SiPM such as photon detection efficiency (PDE) and timing performance because it does not absorb photon sufficiently. Our previous work demonstrated that guiding incident photons into the photo sensitive area of SPADs using metalens array resulted in improvement of the performance of the SiPM. However, performance is expected to fluctuate due to misalignment caused by slight vibration because metalens and SiPMs are separated configuration. Guaranteeing a good alignment between the metalens and SiPM has been necessary for practical applications. Here, we demonstrate the completely monolithic integration of a metalens with its corresponding SPAD to provide stable PDE improvement while maintaining the compact and flatness of the optical device. Furthermore, we investigated the crosstalk and dark-current comparing with a reference SiPM without the metalens for investigating the negative effect of integrating metalens with the SiPM. From the results of sophisticated investigation, we show the more practical approach toward the improving overall performance of the SiPM not only the PDE and timing performance but also crosstalk and dark current. Finally, we will show our next perspective and progress towards near infrared application.

Iqueye is a single photon counting very high speed photometer built for the ESO 3.5m New Technology Telescope (NTT) in La Silla (Chile) as prototype of a ‘quantum’ photometer for the 42m European Extremely Large Telescope (E-ELT). The optics of Iqueye splits the telescope pupil into four portions, each feeding a Single Photon Avalanche Diode (SPAD) operated in Geiger mode. The SPADs sensitive area has a diameter of 100 μm, with a quantum efficiency better than 55% at 500 nm, and a dark count less than 50 Hz. The quenching circuit and temperature control are integrated in each module. A time-to-digital converter (TDC) board, controlled by a rubidium oscillator plus a GPS receiver, time tags the pulses from the 4 channels. The individual times are stored in a 2 TeraByte memory. Iqueye can run continuously for hours, handling count rates up to 8 MHz, with a final absolute accuracy of each time tag better that 0.5 ns. A first very successful run was performed in Jan 2009; both very faint and very bright stars were observed, demonstrating the high photometric quality of the instrument. The first run allowed also to identify some opto-mechanical improvements, which have been implemented for a second run performed in Dec 2009. The present paper will describe the first version, the improvements implemented in the second one, and some of the obtained astronomical results.

This paper presents a new quenching circuit (QC) and single photon avalanche diode (SPAD) implemented in TSMC CMOS 65 nm technology. The QC was optimized for single photon timing resolution (SPTR) with a view to an implementation in a 3D digital SiPM. The presented QC has a timing jitter of 4 ps full width at half maximum (FWHM) and the SPAD and QC has a 7.8 ps FWHM SPTR. The QC adjustable threshold allows timing resolution optimization as well as SPAD excess voltage and rise time characterization. The adjustable threshold, hold-off and recharge are essential to optimize the performances of each SPAD. This paper also provides a better understanding of the different contributions to the SPTR. A study of the contribution of the SPAD excess voltage variation combined to the QC time propagation delay variation is presented. The proposed SPAD and QC eliminates the SPAD excess voltage contribution to the SPTR for excess voltage higher than 1 V due to its fixed time propagation delay.