Quadratic Fermi node in a 3D strongly correlated semimetal

Both quantum spin Hall and quantum anomalous Hall states are novel states of quantum matter with promising applications. We propose junction quantum wells comprising II-VI, III-V or IV semiconductors as a large class of new materials realizing the quantum spin Hall state. Especially, we find that the bulk band gap for the quantum spin Hall state can be as large as 0.1 eV. Further more, magnetic doping would induce the ferromagnetism in these junction quantum wells due to band edge singularities in the band-inversion regime and to realize the quantum anomalous Hall state.

Recent theory and experiment have revealed that strong spin-orbit coupling can have dramatic qualitative effects on the band structure of weakly interacting solids. Indeed, it leads to a distinct phase of matter, the topological band insulator. In this paper, we consider the combined effects of spin-orbit coupling and strong electron correlation, and show that the former has both quantitative and qualitative effects upon the correlation-driven Mott transition. As a specific example we take Ir-based pyrochlores, where the subsystem of Ir 5d electrons is known to undergo a Mott transition. At weak electron-electron interaction, we predict that Ir electrons are in a metallic phase at weak spin-orbit interaction, and in a topological band insulator phase at strong spin-orbit interaction. Very generally, we show that with increasing strength of the electron-electron interaction, the effective spin-orbit coupling is enhanced, increasing the domain of the topological band insulator. Furthermore, in our model, we argue that with increasing interactions, the topological band insulator is transformed into a "topological Mott insulator" phase, which is characterized by gapless surface spin-only excitations. The full phase diagram also includes a narrow region of gapless Mott insulator with a spinon Fermi surface, and a magnetically ordered state at still larger electron-electron interaction.

Quantum spin Hall (QSH) effect, a fundamentally new quantum state of matter and topological phase transitions are characteristics of a kind of electronic material, popularly referred to as topological insulators (TIs). TIs are similar to ordinary insulator in terms of their bulk bandgap, but have gapless conducting edge-states that are topologically protected. These edge-states are facilitated by the time-reversal symmetry and they are robust against nonmagnetic impurity scattering. Recently, the quest for new materials exhibiting non-trivial topological state of matter has been of great research interest, as TIs find applications in new electronics and spintronics and quantum-computing devices. Here, we propose and demonstrate as a proof-of-concept that QSH effect and topological phase transitions can be realized in /InSb semiconductor quantum wells (QWs). The simultaneous incorporation of nitrogen and bismuth in InSb is instrumental in lowering the bandgap, while inducing opposite kinds of strain to attain a near-lattice-matching conducive for lattice growth. Phase diagram for bandgap shows that as we increase the QW thickness, at a critical thickness, the electronic bandstructure switches from a normal to an inverted type. We confirm that such transition are topological phase transitions between a traditional insulator and a TI exhibiting QSH effect—by demonstrating the topologically protected edge-states using the bandstructure, edge-localized distribution of the wavefunctions and edge-state spin-momentum locking phenomenon, presence of non-zero conductance in spite of the Fermi energy lying in the bandgap window, crossover points of Landau levels in the zero-mode indicating topological band inversion in the absence of any magnetic field and presence of large Rashba spin-splitting, which is essential for spin-manipulation in TIs.

Topological Mott insulator by block spin phenomenology

With the theoretical development and prediction of various topological insulators in two and three dimensions, experimental realization of those topological states and engineering of their characteristics have been hotly pursued, among which the quantum spin Hall effect exhibited in two-dimensional topological insulators have raised lots of concern. This paper aims to firstly give a brief introduction to experimental techniques used in growing and characterizing topological insulators and then we focus on a specific direction, the realization of quantum spin Hall effect, to elucidate one ramification of the experimental progress in the realm of topological insulator. The quantum spin Hall effect distinguishes itself due to its lack of non-magnetic scattering preserved by time reversal symmetry in its edge channels. Thus, materials showing such phenomenon are significantly promising for achieving dissipationless spintronics.

Electrically switchable quantum anomalous and spin Hall states in two-dimensional honeycomb lattices with non-Dirac bands

The interplay between various symmetries and electronic bands topology is one of the core issues for topological quantum materials. Spontaneous magnetism, which leads to the breaking of time-reversal symmetry, has been proven to be a powerful approach to trigger various exotic topological phases. In this Letter, utilizing the combination of angle-resolved photoemission spectroscopy, magneto-optical Kerr effect microscopy, and first-principles calculations, we present the direct evidence on the realization of the long-sought spontaneous ferromagnetism induced topological transition in soft ferromagnetic EuB_{6}. Explicitly, we reveal the topological transition is from Z_{2}=1 topological insulator in paramagnetic state to χ=1 magnetic topological semimetal in low temperature ferromagnetic state. Our results demonstrate that the simple band structure near the Fermi level and rich topological phases make EuB_{6} an ideal platform to study the topological phase physics.

We show that for magic-angle twisted bilayer graphene (TBG) away from charge neutrality, although quantum Monte Carlo (QMC) simulations suffer from the sign problem, the computational complexity is at most polynomial at certain integer fillings. For even integer fillings, this polynomial complexity survives even if an extra inter-valley attractive interaction is introduced, on top of Coulomb repulsions. This observation allows us to simulate magic-angle twisted bilayer graphene and to obtain accurate phase diagram and dynamical properties. At the chiral limit and filling $\nu=1$, the simulations reveal a thermodynamic transition separating metallic state and a $C=1$ correlated Chern insulator -- topological Mott insulator (TMI) -- and the pseudogap spectrum slightly above the transition temperature. The ground state excitation spectra of the TMI exhibit a spin-valley U(4) Goldstone mode and a time reversal restoring excitonic gap smaller than the single particle gap. These results are qualitatively consistent with the recent experimental findings at zero-field and $\nu=1$ filling in $h$-BN nonaligned TBG.

Topological insulators are electronic materials that have a bulk band gap like an ordinary insulator but have protected conducting states on their edge or surface. These states are possible due to the combination of spin-orbit interactions and time-reversal symmetry. The two-dimensional (2D) topological insulator is a quantum spin Hall insulator, which is a close cousin of the integer quantum Hall state. A three-dimensional (3D) topological insulator supports novel spin-polarized 2D Dirac fermions on its surface. In this Colloquium the theoretical foundation for topological insulators and superconductors is reviewed and recent experiments are described in which the signatures of topological insulators have been observed. Transport experiments on $\mathrm{Hg}\mathrm{Te}∕\mathrm{Cd}\mathrm{Te}$ quantum wells are described that demonstrate the existence of the edge states predicted for the quantum spin Hall insulator. Experiments on ${\mathrm{Bi}}_{1\ensuremath{-}x}{\mathrm{Sb}}_{x}$, ${\mathrm{Bi}}_{2}{\mathrm{Se}}_{3}$, ${\mathrm{Bi}}_{2}{\mathrm{Te}}_{3}$, and ${\mathrm{Sb}}_{2}{\mathrm{Te}}_{3}$ are then discussed that establish these materials as 3D topological insulators and directly probe the topology of their surface states. Exotic states are described that can occur at the surface of a 3D topological insulator due to an induced energy gap. A magnetic gap leads to a novel quantum Hall state that gives rise to a topological magnetoelectric effect. A superconducting energy gap leads to a state that supports Majorana fermions and may provide a new venue for realizing proposals for topological quantum computation. Prospects for observing these exotic states are also discussed, as well as other potential device applications of topological insulators.

We investigate the quantum many-body instabilities of the extended Hubbard model for spinless fermions on the honeycomb lattice with repulsive nearest-neighbor and 2nd nearest-neighbor density-density interactions. Recent exact diagonalization and infinite density matrix renormalization group results suggest that a putative topological Mott insulator phase driven by the 2nd nearest-neighbor repulsion is suppressed, while other numerically exact approaches support the topological Mott insulator scenario. In the present work, we employ the functional renormalization group (fRG) for correlated fermionic systems. Our fRG results hint at a strong suppression of the scattering processes stabilizing the topological Mott insulator. From analyzing the effects of fermionic fluctuations, we obtain a phase diagram which is the result of the competition of various charge ordering instabilities.

In this paper, we study a one-dimensional boson system in a superlattice potential. This system is experimentally feasible by using ultracold atomic gases, and attracts much attention these days. It is expected that the system has a topological phase called a topological Mott insulator (TMI). We show that in strongly-interacting cases, the competition between the superlattice potential and the on-site interaction leads to various TMIs with a non-vanishing integer Chern number. Compared to the hard-core case, the soft-core boson system exhibits rich phase diagrams including various non-trivial TMIs. By using the exact diagonalization, we obtain detailed bulk-global phase diagrams including the TMIs with high Chern numbers and also various non-topological phases. We also show that in adiabatic experimental setups, the strongly-interacting bosonic TMIs exhibit the topological particle transfer, i.e., the topological charge pumping phenomenon, similarly to weakly-interacting systems. The various TMIs are characterized by topological charge pumping as it is closely related to the Chern number, and therefore the Chern number is to be observed in feasible experiments.

Average symmetry protects the topological surface states of topological (crystalline) insulators with time-reversal symmetry from disorder-induced localization. However, the nature of such average symmetry for magnetic topological insulators and, in particular, its connection to surface transport await inspection. Here, we investigate the impact of imperfect magnetic order on an antiferromagnetic topological insulator, which is a solid with a bulk axion field $\ensuremath{\theta}=\ensuremath{\pi}$. We find that the disordered topological surfaces of an antiferromagnetic topological insulator can be generally gapped and localized. The behavior of topological surfaces is now controlled by a mesoscopic average time-reversal symmetry that requires a magnetically imperfect system to be divisible into finite and magnetically neutral slabs. In the presence of this mesoscopic average time-reversal symmetry, the topological surface states will be gapless in the thermodynamic limit and tend to delocalize at a single energy similar to the delocalization transition in the chiral universality class. The notion of average-symmetry-induced delocalization is thus extended to account for magnetic topological insulators, and the spectroscopic and transport signatures clarified herein are relevant to future experimental investigations.

Topological insulators represent unusual topological quantum states, typically with gapped bulk band structure but gapless surface Dirac fermions protected by time-reversal symmetry. Recently, a distinct kind of topological insulator resulting from nonsymmorphic crystalline symmetry was proposed in the KHgX ($X=\mathrm{As}$, Sb, Bi) compounds. Unlike regular topological crystalline insulators, the nonsymmorphic glide-reflection symmetry in KHgX guarantees the appearance of an exotic surface fermion with hourglass shape dispersion (where two pairs of branches switch their partners) residing on its (010) side surface, contrasting to the usual two-dimensional Dirac fermion form. Here, by using high-resolution angle-resolved photoemission spectroscopy, we systematically investigate the electronic structures of KHgSb on both (001) and (010) surfaces and reveal the unique in-gap surface states on the (010) surface with delicate dispersion consistent with the ``hourglass Fermion'' recently proposed. Our experiment strongly supports that KHgSb is a nonsymmorphic topological crystalline insulator with hourglass fermions, which serves as an important step to the discovery of unique topological quantum materials and exotic fermions protected by nonsymmorphic crystalline symmetry.

The properties that distinguish topological crystalline insulator (TCI) and topological insulator (TI) rely on crystalline symmetry and time-reversal symmetry, respectively, which encodes different bulk and surface/edge properties. Here, we predict theoretically that electron-doped TlM (M = S and Se) (110) monolayers realize a family of two-dimensional (2D) TCIs characterized by mirror Chern number CM = -2. Remarkably, under uniaxial strain (≈ 1%), a topological phase transition between 2D TCI and 2D TI is revealed with the calculated spin Chern number CS = -1 for the 2D TI. Using spin-resolved edge states analysis, we show different edge-state behaviors, especially at the time reversal invariant points. Finally, a TlBiSe2/NaCl quantum well is proposed to realize an undoped 2D TCI with inverted gap as large as 0.37 eV, indicating the high possibility for room-temperature observation.

The anomalous valley Hall (AVH) effect, characterized by a polarized valley degree of freedom, provides a route toward a valley-dependent quantum anomalous Hall (QAH) state. Yet, realizing both in one material remains challenging due to their distinct Chern number requirements. We propose a general strategy for a strain-tunable topological transition in hexagonal ferromagnets. In the inversion-broken system, spin–orbit coupling yields valley polarization with valley-contrasted Chern numbers (C = ±1/2). Strain closes and reopens the gap at one valley, driving band inversion that switches the total Chern number to C = −1, transforming the system into a QAH phase with a single chiral edge channel. This strain-driven transition is demonstrated in monolayers of FeXY (X ≠ Y; Cl, Br, I), ScBr2, and VSi2P4. These results highlight the key role of strain engineering in controlling valley topology and provide a viable route toward valleytronic and topotronic applications.