Racetrack resonator based integrated phase shifters on silicon nitride platform

Optimization and comprehensive comparison of thermo-optic phase shifter with folded waveguide on SiN and SOI platforms

This chapter discusses giant optical path length (OPL) from thin-layer molybdenum disulphide originated from their high refractive indices. Refractive optical components rely on the OPL to modify the phase front of an optical beam. It shows that high-index two-dimensional (2D) materials have extraordinary elastic interactions with light, enabled uniquely by the combination of their ultra-thin nature and high refractive indices. 2D layered materials have emerged as promising candidates for miniaturisation of optoelectronic devices, such as photo-detectors, light emitters, absorbers, edge non-linear optics and valleytronic devices, due to their strong inelastic interactions with light. The giant scattering efficiency in high-index 2D materials makes it possible to achieve sophisticated light manipulation based on collective scattering by nanostructured patterns. 2D optical components represents a significant advantage in manufacturing compared to conventional 3D optical components, because different functionalities can all be achieved in a 2D platform sharing the same fabrication processes and this will greatly facilitate large-scale manufacturing and integration.

We proposed and demonstrated a compact and low propagation loss thermo-optical phase shifter using a multi-mode interference. The calculated insertion loss of designed MMI phase shifter was approximately 0.05 dB. The fabricated phase shifter shows high speed and low power consumption. The wavelength tunable laser diode with two ring resonators loaded the MMI phase shifters was fabricated. The wavelength tuning operation with low power consumption was successfully demonstrated.

This paper presents a 24.25–26.65 GHz 6-bit phase shifter in 65nm CMOS technology. The proposed architecture of the phase shifter divides the 6-bit phase shifter into one 3-bit and three 1-bit sub phase shifters. The low resolution sub phase shifters can be implemented just by switches and sub VGA cells which can lower the phase error apparently. The phase shifter results in a simulated RMS phase error <1.7°, meeting the requirement of 6-bit phase shifter. And the RMS gain error is less than 1.27dB in entire frequency range. The total consumption is 58mW and the core chip size is 1.15×0.85 mm2.

In this paper we developed a ferroelectric CPW phase shifters which will be integrated with wideband CTS antenna array. For fabrication of the ferroelectric CPW, the vacuum sputter has been used with a optimized sputtering parameters. The experimental RF performances of the developed phase shifters were compared with those from simulations using WIPL-D software. The results showed that while the approach of using thin Ferroelectric films may be successful in designing low cost tunable coplanar waveguide phase shifters, the amount of achievable phase shifts are small (less that 10°) unless Ferroelectric compatable substrates such as STO are used (phase shifts are 27°). Good agreement was also observed between simulations and measured results and this provides high confidence in the developed fabrication process‥ While our group has been successful in fabricating thin film ferroelectric phase shifter, work is still underway to help develop multilayer ferroelectric phase shifters as well as on the development of an integrated CTS and ferroelectric phased antenna array. As a next step, our group is now pursuing fabrication of a ferroelectric multilayer CPW integrated with the CTS antenna array.

Broadband, true time delay phase shifters based on MEMS switches provide the high instantaneous bandwidth desired for applications such as multi-frequency antenna arrays with multiple functions such as radar, communications, and ECM. MEMS based phase shifters offer significant performance advantages compared to technologies using PIN diode or MESFET switches including high linearity that does not limit the dynamic range of the receiver in a crowded signal environment. Furthermore, MEMS phase shifters offer a combination of low RF insertion loss and low switch control power consumption that is unmatched by PIN diode or MESFET technologies, giving the MEMS phase shifters a decided advantage at reducing prime power consumption in airborne or space based systems. Radant MEMS Inc., employing its high power 10 Watt MEMS switch with a demonstrated 1 trillion cycle lifetime, designed, fabricated and tested a 6-bit, 5 Watt, true time delay, 1–6 GHz, MEMS phase shifter that, with the exception of the three longest delay lines, was integrated on a single silicon die. This compact, low cost phase shifter is hermetically sealed using the same wafer capping process now employed for Radant's MEMS switches.

A 27–31 ​GHz 6-bit phase shifter with low phase error/gain variation in 65 ​nm CMOS

As alternatives to precious gold/platinum electrodes, graphene-based ionic polymer-metal composite actuators were successfully demonstrated by reduced graphene oxide and direct grown graphene on both sides of the perfluorinated sulfonic acid polymer layer using electronic spray coating and wet transfer methods. In addition, a platinum electrode was prepared as a reference. We characterized the electrical and structural properties of the graphene electrodes using a four-point probe system and atomic force microscopy. The static actuation ranges were analyzed, and a modeling procedure was carried out to obtain the linear curvature---voltage relations. Furthermore, the periodic actuation range was dynamically tested to evaluate the changes in the actuation performance over time. The experimental results showed that the reduced graphene oxide electrodes are a good alternative to platinum electrode that provide better flexibility and restoration of the original shape. And also direct grown graphene electrode is also valuable to access the stacked actuator owing to the hydrophobic sub-nanometer electrode.

Gamma-ray irradiation effects on capacitance and conductance of graphene-based Schottky diode

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10.31635/ccschem.021.202101063

In this work, we present a 3-bit K-band distributed phase shifter circuit that employs microelectromechanical systems (MEMS) capacitive switches. The measured results demonstrate an average 1.7 dB insertion loss at 26 GHz with return loss better than -7 dB. Insertion phase shifts of all switching states are measured and show phase error less than 8.50 for all states. The low loss K-band 3-bit phase shifter demonstrated here can potentially be extended to more-bit-controlled phase shifter applications.

Full-duplex base-stations with half-duplex nodes, allowing simultaneous uplink and downlink from different nodes, have the potential to double the spectrum efficiency without adding additional complexity at mobile nodes. Hybrid beam-forming is commonly used in millimeter wave systems for its implementation efficiency. An important element of hybrid beam-forming is quantized phase shifters. In this paper, we ask if low-resolution phase shifters suffice for beamforming-based full-duplex millimeter wave systems. We formulate the problem of joint design for both self-interference suppression and downlink beamforming as an optimization problem, which we solve using penalty dual decomposition to obtain a near-optimal solution. Numerical results indicate that low-resolution phase shifters can perform close to systems that use infinite phase shifter resolution, and that even a single quantization bit outperforms half-duplex transmissions in both low and high residual self-interference scenarios.

This article discusses different topologies of switch‐type phase shifter units and the effects of such units on phase accuracy and loss variation for wideband operation. It is observed that the optimal selection of topology depends on the value of phase shift. This article discusses a Ka‐band 5‐bit switch‐type phase shifter MMIC with T‐type high‐pass topology, T‐type low‐pass topology, and high‐pass/low‐pass switched‐path‐type topology. This circuit was implemented through a 65‐nm CMOS process. This phase shifter has low RMS phase error of 2.4°–6.2° and low RMS amplitude error of 0.48–0.66 dB over the 32–41 GHz.

A conformal cylindrical phased array antenna excited with composite right/left-handed (CRLH) phase shifters is proposed. The phase tuning of the CRLH phase shifter is achieved by embedding novel magneto-static field-responsive micron-sized particles in its structure. It is shown that through the tiny magnet activation of these novel magneto-static particles at appropriate locations along the length of CRLH stub and inter-digital fingers, variable phase shifts are obtained. The proposed particle-based CRLH phase shifter operates in C-band (5–6) GHz with a low insertion loss and phase error. The 1 × 4 cylindrical phased array is excited with the four unit cells of the proposed particle-embedded CRLH transmission line phase shifters to scan the main beam at desired scan angles. A prototype of a 1 × 4 cylindrical phased array excited with the particle-based CRLH phase shifters was fabricated, and the results show that the simulated results are in close agreement with the measured results. The conformal cylindrical array with the proposed particle-based CRLH phase shifters has great potential for use in printed and flexible electronics design where commercially available phase shifters have a definite drawback.