Recent development of millimeter-wave CMOS monolithic integrated circuits

In this work, we describe monolithic millimeter-wave integrated circuit (MMIC) Low Noise Amplifier (LNA) and mixer designs for U-Band, also known as the WR19 waveguide band (40–60 GHz). The LNAs were fabricated in NGC's 35 nm InP HEMT MMIC process. The MMICs were packaged in WR19 waveguide housings and tested for noise, both at room temperature and cryogenically. We present the results, including a comparison to the state-of-the-art, and discuss applications for amplifiers in this frequency range. To date, these are the first cryogenic 35 nm InP MMIC results covering the 40–60 GHz range. We achieved a noise temperature less than 30 K over the 40–60 GHz range, when the amplifiers were cryogenically cooled. These results are comparable with other results in the literature, and we believe are the lowest reported for MMICs in the 50–60 GHz range.

As device technology improves, interest in the millimeter-wave band grows. Wireless communication systems migrate to higher frequencies, millimeter-wave radars and passive sensors find new solid-state implementations that promise improved performance, and entirely new applications in the millimeter-wave band become feasible. The circuit or system designer is faced with a new and unique set of challenges and constraints to deal with in order to use this portion of the spectrum successfully. In particular, the advantages of monolithic integration become increasingly important. This thesis presents many new developments in Monolithic Millimeter-Wave Integrated Circuits (MMICs), both the chips themselves and systems that use them. It begins with an overview of the various applications of millimeter waves, including a discussion of specific projects that the author is involved in and why many of them demand a MMIC implementation. In the subsequent chapters, new MMIC chips are described in detail, as is the role they play in real-world projects. Multi-chip modules are also presented with specific attention given to the practical details of MMIC packaging and multi-chip integration. The thesis concludes with a summary of the works presented thus far and their overall impact on the field of millimeter-wave engineering.

We have developed V-Band (50–75 GHz) monolithic millimeter-wave integrated circuit (MMIC) low noise amplifiers using NGC's 35 nm InP HEMT technology. The MMIC LNAs exhibit noise temperatures of 150–270K over the full waveguide band. Subharmonic MMIC mixers were also developed using United Monolithic Semiconductor's GaAs Schottky diode process, and cover V-band with 15–21 dB conversion loss. These components form the front end of receivers that could be used for radio astronomy. While much of V-Band is opaque to the atmosphere, a future space probe to map the intensity of carbon monoxide (CO) in V-band would help astronomers understand the early universe.

A new W-band transceiver circuit design is introduced for wireless high speed data transmission applications that relies entirely on commercially available 77 GHz automotive radar MMIC (monolithic millimeterwave integrated circuits) and thinfilm ceramics. The advantage of this approach is twofold. Firstly, already well established technology can be utilized for a new field of applications. Secondly, the resulting higher production volume due to deeper market penetration lowers the MMIC cost and therefore benefits likewise the automotive as well as the telecommunications market. A study of geographically correlated link-ranges shows that 779 m-2.4 km can be achieved depending on the required link availability. A super heterodyne transceiver design using a quasi PSK modulation is proposed. Measured results of two passive system components are presented exemplarily.

A high-gain InP monolithic millimeter-wave integrated circuit (MMIC) cascode amplifier has been developed which has 8.0 dB of average gain from 75 to 100 GHz when biased for maximum bandwidth, and more than 12 dB of gain at 80 GHz at the maximum-gain bias point, representing the highest gains reported to date, obtained from MMICs at W band (75-100 GHz). Lattice-matched InGaAs-InAlAs high-electron-mobility-transistors (HEMTs) with 0.1- mu m gates were the active devices. A coplanar waveguide (CPW) was the transmission medium for this MMIC with an overall chip dimension of 600*500 mu m.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>

A front-end MIMIC (millimeter wave monolithic integrated circuit) with a 4:2 MUX/DEMUX (multiplexer / demultiplexer) functionality for 60 GHz transceiver with multiple antennas has been developed. The chip has been realized using 100 nm gatelength metamorphic InAlAs / InGaAs HEMT (high electron mobility transistor) technology on GaAs substrate together with CPW (coplanar waveguide) technology. The chip has been designed for functionality over the frequency range of 55-65 GHz. The novel topology for the MIMIC will be described. The single building blocks and details for the DPDT (double pole double throw) switch design will be explained, simulated and measured results will be compared. Finally, the overall performance for the integrated chip will be presented.

We describe the design and measurement of a hybrid-circuit, tile-approach subarray for use in spatial power-combined transmitters. The subarray consists of 16 monolithic millimeter-wave integrated circuit (MMIC) amplifiers, each feeding a circularly polarized cavity-backed microstrip antenna. The average performance across the 43.5-45.5 GHz band is as follows: EIRP 18.3 dBW, DC-RF efficiency 10.3%, effective transmitter power 530 mW, system gain 13.2 dB, and combining efficiency of 46.2%. The minimum axial ratio is 1.2 dB at 43.9 GHz, and the array has a 3% 3-dB axial ratio bandwidth.

This article presents a fully integrated first downconversionstage for a superheterodyne receiver for high data ratecommunication at 300 GHz. It comprises a frequency multiplierby-three, an active dual-gate downconverter, and an LNA. Thechip was fabricated in a 35-nm InGaAs-based metamorphic highelectron-mobility transistor technology. The downconverter wasdesigned to be used for different local oscillator (LO) frequenciesbetween 70 and 80 GHz and intermediate frequency (IF)frequencies from 65 to 95 GHz, to create multiple channels forreal-time full-duplex communication in the terahertz region. Itachieves a conversion gain of 14 dB without IF amplification and3-dB bandwidth of 25 GHz in the desired upper sideband from288to 313 GHz and an estimated NF of 6.6 dB. Without the LNA, theconversion gain of the circuit is −10 dB and it shows 3-dB bandwidthof 38 GHz in a frequency range from 281 to 319 GHz. Finally,the millimeter-wave monolithic integrated circuit (MMIC) willbe compared in detail to a similar state-of-the-art downconverterusing a resistive mixer and a necessary additional LO buffer stagein the same technology targeting the identical application. Whileexhibiting a better conversion gain and bandwidth and occupyingonly40%of chip area, the presented downconverter consumes70%less dc power than the MMIC with a resistive mixer.

An analysis of new broadside-coupled coplanar waveguides (CPW) having a completely asymmetrical structure, suitable for hybrid and monolithic microwave and millimeter-wave integrated circuits requiring broad bandwidths as well as loose and tight couplings, is presented. The results of the investigation, performed based on the spectral-domain analysis, demonstrate the versatility of the asymmetrical broadside-coupled CPW as compared to its symmetrical counterpart.

This paper presents the development and performance of a gallium nitride (GaN) monolithic millimeter-wave integrated circuit (MMIC) power amplifier (PA) covering the full W-band (75-110 GHz). The 4-stage PA, developed using a 100-nm GaN-on-SiC technology, demonstrates a linear gain of more than 15 dB over about 40GHz of bandwidth. Operating in a con-tinuous-wave (CW) mode, it produces a typical output power of 24.2 dBm with power flatness of ± 1 dB over 75-110 GHz. The average power added efficiency is 6.5%. Due to its unique combination of bandwidth, output power and power flatness, this amplifier could be a suitable building block for wideband communication, measurement or phase-arrav systems.

Low temperature high density Si3N4 MIM capacitor technology for MMMIC and RF-MEMs applications

A fully integrated transceiver MIMIC (millimeter wave monolithic integrated circuit) with six antenna port functionality for 55 to 65 GHz wireless applications has been developed. The chip has been realized using 100 nm gatelength metamorphic InAlAs / InGaAs HEMT (high electron mobility transistor) technology on GaAs substrates together with CPW (coplanar waveguide) technology. The novel transceiver topology consists of switches, amplifiers, mixers, a voltage controlled oscillator and a frequency divider. The receiver chain shows noise figure < 2.6 dB on the low noise amplifier level and smaller than 7 dB including the antenna switching network. The medium output power amplifier delivers the saturated power level of + 14 dB m. This is the highest integration level for a 60 GHz compound semiconductor transceiver chip reported to-date.

For broadband radar applications in the W-Band or beyond we present a frequency multiplier-by-twelve millimeter-wave monolithic integrated circuit (MMIC). The measured 3-dB output bandwidth ranges from 77 to 106 GHz, i.e. a relative bandwidth of 31.7%. The active technology allows an overall maximum conversion gain of 3.8dB with a maximum output power of 1.8 dBm at 84GHz. The use of a compact balancing topology features a compact layout together with ultra-broadband performance. The MMIC is realized in a 100 nm metamorphic high electron mobility transistor (mHEMT) technology.

This paper presents an all-electronic superheterodyne wireless system based on millimeterwave monolithic integrated circuits at a center frequency of 300 GHz. Superheterodyne operation is attractive for compliance with the recent IEEE802.15.3d frequency standard. The super-heterodyne transmission is realized, both, with mixers operating at a frequency of 10 GHz, and with an arbitrary waveform generator output centered around 10 GHz. The paper compares both options in terms of error vector magnitude for different baud rates and modulation formats. Data rates of up to 60 Gbps and distances of up to 10 meters are achieved using complex modulated signals like 16-QAM and 32-QAM.

The design, fabrication, and measurements for a 44-GHz band molecular-beam epitaxy (MBE) monolithic power amplifiers are presented. The devices are based on an optimized device structure of large gate-width periphery (0.8 mm). The circuit design approach allows direct cascading of MIMIC (millimeter-wave monolithic integrated circuit) chips to provide useful power gain for system implementation. A five-stage balanced amplifier is highlighted that provided a linear gain of 15.1 dB and maximum output power of 500 mW at 42.5 GHz.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>