Reliability Study of Gallium Oxide Power Devices

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Gallium oxide power devices (GaO power devices) have attracted significant attention in the field of power electronics due to their excellent wide bandgap characteristics. This paper analyzes their operating principles, including device structure and operational characteristics, and discusses the key factors affecting reliability as well as the current state of research. Particular emphasis is placed on the physicochemical mechanisms of thermal failure and electrical breakdown failure, revealing the complexity of failure behaviors. Reliability testing methods, such as mechanical stress testing and accelerated lifetime testing, are also introduced. Finally, strategies for improving reliability through material enhancements (such as doping techniques) and process optimization are proposed, providing guidance for the research, development, and application of gallium oxide power devices.