5- https://doi.org/10.3952/lithjphys.47107
Reverse-bias leakage in Schottky diodes
- Jan 1, 2007
- Lithuanian Journal of Physics
- P Pipinys
Reverse-bias currentnvoltage (IRnV ) characteristics of Al-n / GaAs Schottky diodes have been studied in a temperature range from 92 to 333 K. The results are explained on the basis of phonon-assisted tunnelling model. It is shown that the temperature dependence of the reverse current IR could be caused by the temperature dependence of the electron tunnelling rate from traps in the metalnsemiconductor interface to the conduction band of the semiconductor. Temperature-dependent IRnV data obtained by Zhang et al [J. Appl. Phys. 2006; 99: 023703] and Osvald et al [Microelectron. Eng. 2005; 81: 181] for Schottky diodes fabricated on n-GaN are reinterpreted in terms of a phonon-assisted tunnelling model. The temperature and bias voltages dependences of an apparent barrier height (activation energy) observed by other researchers are also explained in the framework of this model.
- # Characteristics Of Al-n
- # Schottky Diodes
- # GaAs Schottky Diodes
- # Reverse-bias Leakage
- # Dependences Of Height
- # Apparent Height
- # Activation Energy
- # Temperature Dependence
- # Temperature Range
- # Temperature-dependent Data
