SAMBA: Single-ADC Multi-Bit Accumulation Compute-in-Memory Using Nonlinearity- Compensated Fully Parallel Analog Adder Tree

Abstract

Translate Article

Performing data-intensive tasks in the von Neumann architecture is challenging to achieve both high performance and energy efficiency due to the memory wall bottleneck. Compute-in-memory (CiM) is a promising mitigation approach by enabling parallel and in-situ multiply-accumulate (MAC) operations within the memory array. Thanks to the good matching of capacitors, SRAM-based charge-domain CiM (Q-CiM) has shown its potential for higher row-wise parallelism. However, the peripheral circuits of Q-CiM, such as the input drivers and analog-digital converters (ADCs), limit further improvement of throughput and area efficiency. This paper proposes a single-ADC multi-bit accumulation CiM macro architecture SAMBA, which can perform multi-bit MAC operation with ReLU of two vectors in one CiM cycle by only a single A/D conversion to mitigate the ADC overhead. In addition, post-correction methods are proposed to compensate the non-linearity of sensitive circuit modules in SAMBA to recover the accuracy drop due to the capacitor mismatch. A proof-of-concept macro is fabricated in a 65nm process and achieves 51.2GOPS throughput and 10.3TOPS/W energy efficiency, while showing 88.6% accuracy on CIFAR-10 and 64.8% accuracy on the CIFAR-100 with VGG-8 model.