Screened spin−1 and −1/2 Kondo effect in a triangular quantum dot system with interdot Coulomb repulsion

We study the conductance through a triangular triple quantum dot, which are connected to two noninteracting leads, using the numerical renormalization group (NRG). It is found that the system shows a variety of Kondo effects depending on the filling of the triangle. The SU(4) Kondo effect occurs at half-filling, and a sharp conductance dip due to a phase lapse appears in the gate-voltage dependence. Furthermore, when four electrons occupy the three sites on average, a local S = 1 moment, which is caused by the Nagaoka mechanism, is induced along the triangle. The temperature dependence of the entropy and spin susceptibility of the triangle shows that this moment is screened by the conduction electrons via two separate stages at different temperatures. The two-terminal and four-terminal conductances show a clear difference at the gate voltages, where the SU(4) or the S = 1 Kondo effects occurring.

RKKY interaction and local density of states for a triangular triple quantum dot system

Kondo effects in quantum dots systems

We report the formation of triangular GaAs quantum dots (QDs) on (111)A substrates using droplet epitaxy. Shape transition from hexagonal to triangular QDs is observed with increasing crystallizing temperature, as a result of different growth rates of step edges on a (111)A substrate. Size statistics illustrate the self-limiting growth of GaAs QDs whose characteristic size is determined by that of Ga droplets. Detailed structural analysis further reveals the three-dimensional structure of QDs. By decreasing the amount of Ga, low-density GaAs QDs are obtained while retaining the triangular shape, which allows the optical properties to be studied at a single QD level.

We study the Kondo effect in side-coupled double quantum dots with particular focus on the crossover between two distinct singlet ground states, using the numerical renormalization group. The crossover occurs as the quantized energy level of the embedded dot, which is connected directly to the leads, is varied. In the parameter region where the embedded dot becomes almost empty or doubly occupied, the local moment emerging in the other dot at the side of the path for the current is screened via a superexchange process by the conduction electrons tunneling through the embedded dot. In contrast, in the other region where the embedded dot is occupied by a single electron, the local moment emerges also in the embedded dot, and forms a singlet bond with the moment in the side dot. Furthermore, we derive two different Kondo Hamiltonians for these limits carrying out the Schrieffer-Wolff transformation, and show that they describe the essential feature of the screening for each case.

The modeling and comparative analysis of the relaxation processes in four different heterostructures: traditional heterotransistor, heterotransistor with two channels (heterojunctions), heterotransistor with two channels and a system of quantum dots (QDs), as well as heterotransistor with two channels and two systems of quantum dots were made. It is shown that the heating of electrons in high electric fields in heterotransistors with embedded quantum dots with two heterojunctions is less intensive, and the values of the drift velocity is higher than in the other structures under study.

We investigate the effects of spin-polarized leads on the Kondo physics of a quantum dot using the numerical renormalization group method. Our study demonstrates in an unambiguous way that the Kondo effect is not necessarily suppressed by the lead polarization: While the Kondo effect is quenched for the asymmetric Anderson model, it survives even for finite polarizations in the regime where charge fluctuations are negligible. We propose the linear tunneling magnetoresistance as an experimental signature of these behaviors. We also report on the influence of spin-flip processes.

In this paper, we investigate the spin-polarized transport through parallel N−dot (N = 1, 2, 3) systems in the strongly correlated regime. We focus our attention on the responses of the Ntot = integer states to an increasing magnetic field B, where Ntot is the total charge number on the dots. We show that when the charge level 𝜖 is chosen at the particle-hole (p-h) symmetric case, spin filtering is difficult to occur. While if 𝜖 is beyond the p-h symmetric point, perfect spin-polarized currents could be achieved, and the spin directions can be easily manipulated by tuning external electric and/or magnetic fields, making it easy to be realized in future experiments of the ideas. To approach these problems, the celebrated numerical renormalization group (NRG) technique is implemented, the dynamical properties and the quantum fluctuations are shown.

Conductance and other physical quantities are calculated in double quantum dots (DQD) connected in series in the limit of coherent tunnelling using a Green's function technique. The inter-dot Coulomb repulsion and the exchange interaction are studied by means of the Kotliar and Ruckenstein slave-boson mean-field approach. The crossover from the atomic to the molecular limit is analyzed in order to show how the conductance in the model depends on the competition between the level broadening (dot-lead coupling) and the dot-dot transmission. The double Kondo effect was found in the gate voltage characteristics of the conductance in the atomic limit. In the case, when each dot accommodates one electron, the Kondo resonant states are formed between dots and their adjacent leads and transport is dominated by hopping between these two resonances. In the molecular limit the conductance vanishes for sufficiently low gate voltages, which means the Kondo effect disappeared. For small dot-lead coupling the transport characteristics are very sensitive on the influence of the inter-dot Coulomb repulsion and the position of the local energy level. The resonance region is widened with increase of the inter-dot Coulomb interactions while the exchange interaction has opposite influence.

We propose a new approximation scheme within the equation of motion approach (EOM)to spin polarized transport through a quantum dot coupled to ferromagneticleads. It has some advantages over a standard EOM technique widely used inthe literature, in particular when we are interested in spin polarized quantities.Namely, it gives values of the dot spin polarization which are closer to the onesobtained within the numerical renormalization group (NRG) than the standardEOM approach. While restoring the Kondo effect, the spin polarization vanishesand the transport becomes unpolarized, in agreement with NRG and real timediagrammatic calculations. The standard EOM procedure gives non-zero values of the spinpolarization, and the transport is still spin polarized. Both approximations give the samecorrect splitting of the Kondo peaks due to ferromagnetism in the electrodes.

30aTX-12 The Andreev reflection and the Kondo effect in a quantum dot system at finite bias

Though electron spins in electrically defined silicon (Si) quantum dot systems have been extensively employed for physical realization of quantum processing units, their application to quantum sensing has not been active compared to the case of photonic qubits and nitrogen-vacancy spins in diamonds. This work presents a comprehensive study on the feasibility of Si quantum dot structures as a physical platform for implementation of a sensing protocol for magnetic fields. To examine sensing operations at a systematic level, we adopt in-house device simulations taking a Si double quantum dot (DQD) system as a target device where the confinement of electron spins is controlled with electrical biases in a Si/Si-germanium heterostructure. Simulation results demonstrate the fairly nice utility of the Si DQD platform for detecting externally presented static magnetic fields, and, more notably, reveal that sensing operations are not quite vulnerable to charge noise that is omnipresent in solid materials. As a rare study that presents in-depth discussion on operations of quantum sensing units at a device-level based on computational modeling, this work can deliver practical insights for potential designs of sensing units with electron spins in Si devices.

The nondestructive observation of correlation between optical characteristic and morphologic feature within capped ZnCdSe/ZnSe quantum dots system

We study the Kondo model --a magnetic impurity coupled to a one dimensional wire via exchange coupling-- by using Wilson's numerical renormalization group (NRG) technique. By applying an approach similar to which was used to compute the two impurity problem we managed to improve the bad spatial resolution of the numerical renormalization group method. In this way we have calculated the impurity spin - conduction electron spin correlation function which is a measure of the Kondo compensation cloud whose existence has been a long standing problem in solid state physics. We also present results on the temperature dependence of the Kondo correlations.

We investigate the resistivity and dephasing rate in the Kondo regime due to magnetic impurities in graphene with different chemial potentials ($\mu$). The Kondo effect due to either carbon vacancies or magnetic adatoms in graphene is described by the single-orbital pseudo-gap asymmetric Anderson impurity model. We find that although the Anderson impurity model considered here is a mixed valence system, it can be drived into either the Kondo [$\mu > \mu_c$ (critical value) $>0$] or mixed valency ($\mu \approx \mu_c$) or empty orbital ($\mu < \mu_c$) regime by a gate voltage, giving rise to characteristic features in resistivity and dephasing rate in each regime. Specifically, in the case of $\mu < \mu_c$, the shapes of the resistivity (dephasing rate) curves for different $\mu$ are nearly identical. However, as temperature decreases, they start to increase to their maxima at a lower $T/T_K$ but more rapidly [as $(T_K/T)^{3/2}$] than in normal metals [here $T$ ($T_K$) denotes the (Kondo) temperature]. As $T$ further decreases, after reaching the maximum, the dephasing rate drops more quickly than in normal metals, behaving as $(T/T_K)^3$ instead of $(T/T_K)^2$. Furthermore, the resistivity has a distinct peak above the saturation value near $T_K$. In the case of $\mu > \mu_c$, in contrast, the resistivity curve has an additional broad shoulder above 10$T_K$ and the dephasing rate exhibits an interesting shoulder-peak shape. In the narrow boundary region ($\mu \approx \mu_c$), both the resistivity and dephasing rate curves are similar to the corresponding ones in normal metals. This explains the conventional Kondo like resistivity from recent experiments on graphene with defects. The resistivity and dephasing rate are analysized in terms of the calculated $T$-dependent spectral function, correlation self-energy and renormalized impurity level.