Silica-on-silicon technology for photonic integrated devices

Theory of Optical Communications. Fiber Devices for Optical Communication Systems. Integrated Devices for Optical Communication Systems. Direct Detection Optical Communication Systems. Coherent Systems: Structure and Ideal Performance. Performance Degradation Sources in Coherent Optical Systems. Multilevel Coherent Optical Systems. Multichannel Optical Systems. Present--Day Systems Implementations. Appendices. Index.

Planar lightwave circuits (PLCs) are waveguide devices that integrate fiber-matched optical waveguides on Silicon or glass substrate to provide an efficient means of interaction for the guided-wave optical signals. The most prominent feature of the silica waveguides is their simple and well defined waveguide structures. This allows us to fabricate multi-beam or multi-stage interference devices such as arrayed-waveguide gratings and lattice-form programmable dispersion equalizers. PLCs provide various important and functional devices for optical wavelength division multiplexing (WDM), time division multiplexing (TDM) systems and subscriber networks. This paper reviews the recent progress and future prospects of PLC technologies including arrayed-waveguide grating multiplexers, optical add/drop multiplexers, programmable dispersion equalizers and hybrid optoelectronics integration technologies.

Wavelength division multiplexing (WDM) systems are widely deployed in high-capacity long-haul transmission systems. They can provide cost-effective additional capacity on fibers overloaded by the increase in data traffic. Current WDM systems are used mainly for point-to-point transmission links. Next generation WDM technologies are expected to provide full functionality at both the system and network levels. Next generation WDM system will require many optical components, including optical filters, add/drop multiplexers, circuit switches and wavelength converters. Optical components using planar lightwave circuits (PLCs) are now widely used in WDM systems. Arrayed waveguide gratings (AWGs), in particular, play an important role in current WDM systems. In the next generation system, optical components using PLCs are expected to provide many functions that counterparts cannot. In this paper, we will describe the current and future WDM components using PLCs, focusing on AWGs and switchable add/drop filters.

Silica-based planar lightwave circuit (PLC) devices are starting to be introduced into commercial optical communication systems. PLC devices such as optical splitters, wavelength-insensitive coupler (WINC) arrays, and hybrid- integrated wavelength-division-multiplexing (WDM) transceivers are used to construct cost effective optical access systems. In trunk lines, on the other hand, arrayed-waveguide gratings (AWG) are employed for dense WDM systems to increase the transmission capacity. This paper reviews the current status and recent progress on these practical PLC devices.

Recently, photonic networks based on wavelength division multiplexing (WDM) systems have developed considerably in response to the explosive growth of the Internet. Devices with novel functions are required for photonic networks, and planar lightwave circuits (PLCs) are being considered to meet this need. This paper reports recent progress on PLC- type devices with advanced functions developed for the photonic networks. We describe fabrication techniques and device applications for silica and silicone polymer based PLC technologies.

Optimization of SiN thin film for high index contrast planar silica waveguides

The contribution reports on fabrication and characterization of TiO 2 thin films on Si substrate. The TiO 2 thin films are used for photonic devices in optical communication systems. The most important parameter for the waveguide structures is the refractive index. The crystalline TiO 2 polymorphs can have different refractive index depending on the structure phase, which is technology dependent. The waveguide structures was prepared by pulsed laser deposition using 248 nm KrF laser source and targets of Ti or rutile in oxygen atmosphere. The optical characterization were done using spectroscopic ellipsometry providing the information about electron band gap values and determining the optical parameters (thickness and refractive index) of prepared TiO 2 thin films. Secondary ion mass spectroscopy (SIMS) and secondary electron microscopy (SEM) was done to verify the vertical and chemical structure.

Silica-based planar lightwave circuits (PLC) provide various important devices for both optical wavelength division multiplexing (WDM) networks and optical access networks. This paper is an overview of recent progress in PLC technology including optical power splitters, arrayed-waveguide gratings, thermo-optic switches, and hybrid integrated PLCs.

Structural optimization and growth of intrinsic hydrogenated amorphous silicon films by HWCVD

The monolayer SiN x optical thin films were prepared by Plasma Enhanced Chemical Vapor Deposition (PECVD) technology on the BK7 glass substrate, the laser-induced damage threshold was measured by laser damage testing equipment, and we also investigated the relations between processing techniques and laser-induced damage properties. The study and analysis to orthogonal experiment results show that PECVD processing techniques have an effect on the laser-induced damage properties. Among them,radio frequency has the biggest effection, temperature is the main factor, working pressure is the unimportant factor, and we also achieve the optimal processing parameters (Temperature is 350℃; RF power is 250W; Working pressure is 60Pa).

A trend of high speed computing and communication has demonstrated incredible performance increase, 1000x in every 10yrs. Such enhancements have been realized partly due to Moore’s law based and parallelism based progresses [1]. To keep up such a trend for future, we have to integrate photonics on a chip, i.e., Si photonics, especially on-chip WDM (wavelength division multiplexing) architecture [2]. In the history of the fiber optics, WDM has brought significant increase in bandwidth of optical communication and currently the channel spacing in WDM is as small as 0.8 nm and will soon be 0.4 nm. However, Si photonics has used coarse WDM where the channel spacing is as large as 10nm. The reason for the large spacing is a large TO (thermooptics) coefficient of Si. Due to chip temperature fluctuation on a chip, wavelength is changed widely, malfunctioning WDM. This is the fundamental limit in shrinking the wavelength spacing. In other words, the key challenge to implement on-chip WDM is to lock its channel wavelength within a given channel spacing. In this talk we will focus on silicon nitride based Si photonics, i.e., medium index contrast optics, MiDex Si photonics to lock the channel wavelength within the current dense WDM (DWDM) in optical fiber communication, i.e., 0.8nm spacing [3]. Fig. 1 shows bending radii of various waveguides vs. index difference between the core and cladding of the waveguide. Generally, Si waveguide and SiO2 cladding have been used in Si photonics, where index difference is 2.0. The materials set has a high index contrast, i.e., here we will refer it to as HiDex (high index contrast). The advantage is a sharp bending of the waveguide, which reduces device footfprints and allows high density integration of optical devices on a chip. Althougt the disadvantage is large light propagation loss, Si process technology allows to minimize the roughness of waveguide to reduce the loss to ~1dB/cm. It is known however that Si has a large TO coefficient, i.e., temperature dependence of refractive index. It has been reported that chip temperature has changed about 50˚C during its operation. Thus, on-chip temperature fluctuation changes wavelength, malfunctioning of WDM. To avoid it, a large channel spacing, i.e., 10nm has been chosen. We have been focusing a slightly smaller index contrast system in the following two reasons: When we choose SiNx waveguide and SiO2 cladding, the minimum bending radius is 10 µm which is still small enough and the TO coefficient of SiNx is ~1/10 of that of Si. This indicates this materials system should be robust against temperature fluctuation on a chip. Of course Planar Lightwave Circuit based on silica fiber technology has smaller TO coefficient, here we refer it to as LoDex (low index contrast), but the bending radii should be ~1cm. Thus, we have proposed MiDex Si photonics instead of current HiDex Si photonics. SiNx (0.6-0.8 µm thick) can be deposited on SiO2 (2µm thick) using a physical vapor deposition (PVD) technique. Chemical vapor deposition techniques have widely been used, but CVD SiNx contains N-H bonds that absorb 1520nm, that is in optical communication wavelength range of 1550nm. To dissociate H from SiNx, CVD SiNx should be annealed at high temperature such as 1100˚C. To avoid such high temperature annealing, we have chosen PVD SiNx, which should be free from N-H bonds. We have demonstrated SiNx without such absorption. The present report has verified the advantage of PVD SiNx over CVD SiNx, temperature stability of filter characteristics of ring based resonators, and athermalization using polymer materials.

A family of thin film interference filters is described that incorporates amorphous silicon layers for wide thermo-optic tunability and the potential for multiple cavity designs. Plasma enhanced chemical vapor deposition (PECVD) of hydrogenated amorphous silicon (a-Si:H) onto fused silica or crystalline silicon wafer substrates produces films with high index (n=3.71), low loss at 1500 nm (k<4/spl times/10/sup -6/), and thermo-optic index coefficients approximately ten times larger than those of the dielectric materials typically used in wavelength division multiplexing (WDM) filters. Pairing amorphous silicon with low index (n=1.77, k=1/spl times/10/sup -6/) silicon nitride companion layers followed by post-process annealing leads to multilayer film stacks which may be cycled up to 400 C without delamination or failure, resulting in thermal index modulations as large as 4% and enabling a wide variety of dynamic thin film device designs. In this paper we survey the range of device applications and show experimental demonstrations for two quite different classes of functionality. One class of filters is tunable in wavelength in the conventional sense. Single and dual-cavity narrowband filters are described with temperature coefficients of center wavelength 85-172 pm//spl deg/C in the 1550 nm WDM band and tuning ranges as large as 60 nm, an order of magnitude larger thermal tunability than for conventional thin film narrowband filters. A second class of filters is fixed in wavelength but switchable in transmission, based on hybrid structures which combine tunable semiconductor films and cavities with static dielectric films and cavities in an integrated coating design. To demonstrate the principle of a switchable add/drop filter, we fabricated a five-cavity, 117 layer, 200 GHz filter by combining a single cavity of a-Si:H/a-Si/sub x/N/sub y/ films deposited by PECVD with four cavities of dielectrics Ta/sub 2/O/sub 5//SiO/sub 2/ deposited by ion assisted e-beam evaporation. By varying the temperature, this device can be switched thermo-optically between transmission and reflection states at a fixed channel 1548.3 nm with a contrast ratio 18.4 dB. Stable devices can be obtained even with large internal temperature changes in microscopic volumes provided that layer-to-layer and layer-to-substrate adhesion is robust, film stresses are well controlled through coefficients of thermal expansion matching, and devices are annealed at or above maximum operational temperatures. Hitless filters can be obtained by structuring thermo-optic filters in two independently heated portions. Thermo-optically actuated thin film semiconductor devices are manufacturable and testable on a wafer scale and may be packaged by methods adapted from those for conventional thin film filters.

To achieve much larger capacity in point-to-point wavelength division multiplexing (WDM) transmissions, we must increase their bit rate per wavelength as well as their channel number. Optical networks are continuing to adopt rings and packet-switched systems. These advanced optical systems require highly functional optical devices to exceed the electrical speed limit. I describe recent advances in planar lightwave circuit (PLC) based functional devices, such as dispersion equalizers, large-scale arrayed-waveguide gratings (AWGs), and optical signal processing devices.

The multiple quantum well (MQW) structure is a good candidate to monolithically integrate lasers and waveguides for realizing photonic integrated circuits. For such an application, selective disordering techniques are required, because these can make it possible to define a waveguide section laterally by inducing local changes in absorption and refractive indices of a MQW structure, which is needed to fabricate waveguide devices including laser. There are several techniques to selectively disorder the I I I -V MQW structures. These are impurity induced disordering [1,2], ion implantation disordering [3, 4], and impurity-free disordering [5-12] followed by thermal treatment. Impurity induced disordering and ion implantation disordering can disorder MQW structure perfectly, but these techniques introduce many defects and high doping concentrations which may deteriorate the performances of waveguide devices because of losses from scatterings by defects and free carrier absorption in the waveguide. Impurity-free techniques employ dielectrics, such as SiO2 or SiN, a capped annealing technique, which employs rapid thermal annealing (RTA) [5-10] or sealed ampoule annealing with an As overpressure [11, 12]. Impurity-free techniques do not disorder MQW structure completely, but disorder it enough to fabricate waveguides and lasers [9-12]. For impurity-free disordering, there are various film growth techniques, such as chemical vapour deposition (CVD) [11], e-beam evaporation [6, 8, 9], sputtering [5], and plasma enhanced chemical vapour deposition (PECVD) [7, 10, 12], which can deposit SiN and/or Si te films on a MQW structure. The behaviour of disordering is affected by the film quality used in the impurity-free disordering technique. Therefore, if an optimum film growth condition can be found by varying process conditions, then selective disordering can be achieved with the same material without surface degradation which should be accompanied in the disordering process without an encapsulation. The characteristics of film deposited by the PECVD technique can be varied by varying process conditions, such as substrate temperature, ratio of reactant gas, and RF power [13]. As a first step to finding a process-dependent impurity-free disordering, we varied the RF power. We carried out impurity-free disordering using a PECVD SiN cap layer with RTA. We found that this technique could disorder the GaAs/A1GaAs MQW structure and the disordering was enhanced by using SiN film grown at high RF power. We used a GaAs/A1GaAs MQW laser structure which was grown by a metal organic chemical vapour deposition (MOCVD) technique on Si-doped n ÷ GaAs substrate. The structure has the following layers from the top of the substrate: 0.5/xm of n (1018 cm -3) GaAs buffer, 1/zm of n (1017 cm -3) A10.4~Ga0.s3As, 0.1/xm of undoped A10.24Ga0.76As, four 7 nm undoped GaAs quantum wells with 10 nm A10.24Ga0.76As barrier, 0.1/xm of undoped A10.24Ga0.76As, 1/zm of p (1017 cm -3) A10.47Ga0.53As, and 0.2/xm of p+ (10 ~8 cm -3) GaAs. In the substrate design, separate confinement design is chosen to enhance the optical confinement in the quantum wells. SiN films were deposited by a PECVD technique for cap layers. We used dilute silane (5% Sill4 in N:) and high purity NH 3 (99.999%) and N2 (99.9999%) as a reactant gas. During plasma deposition, the ratio of partial pressure (PNH3/Psi~,) was kept at 1, total pressure was kept as 120 Pa by adding N2 gas and the substrate temperature was 300 °C. SiN films were grown with various RF powers (0 W, 60 W and 90 W). The thicknesses and refractive indices, for each RF power condition, were determined by an ellipsometer (Gaertner, Ll17) and a surface profiler (Tencor, alpha step 200). Disordering of MQW samples was accomplished by RTA at 850 °C for 35 s in Ar atmosphere with a heating rate of 65 °C/s. Disordering of MQW

Deep neural networks (DNNs) have been applied to recover signals in optical communication systems and have shown competence of mitigating linear and nonlinear distortions. However, as the data throughput increases, the heavy computational cost of DNNs impedes them from rapid and power-efficient processing. In this paper, we propose an optical communication signal recovery technology based on a photonic convolutional processor, which is realized by dispersion delay unit and wavelength division multiplexing. Based on the photonic convolutional processor, we implement an optoelectronic convolutional neural network (OECNN) for signal post-equalization and experimentally demonstrate on 16QAM and 32QAM of an optical wireless communication system. With system parameters optimization, we verify that the OECNN can achieve accurate signal recovery where the bit error ratio (BER) is below the 7% forward error correction threshold of 3.8×10-3 at 2Gbps. With adding the OECNN-based nonlinear compensation, compared with only linear compensation, we improve the quality (Q) factor by 3.35 dB at 16QAM and 3.30 dB at 32QAM, which is comparable to that of an electronic neural network. This work proves that the photonic implementation of DNN is promising to provide a fast and power-efficient solution for optical communication signal processing.