44- https://doi.org/10.1063/1.3670325
Silicon-compatible compound semiconductor tunneling field-effect transistor for high performance and low standby power operation
- Dec 12, 2011
- Applied Physics Letters
- Seongjae Cho +4 more
In this study, we propose and characterize by simulation a silicon-compatible compound semiconductor tunneling field-effect transistor (TFET) based on germanium (Ge)/gallium arsenide (GaAs) heterojunction aiming the various integrated systems on silicon substrate. By introducing Ge as p+ source and GaAs as the high-mobility channel and n+ drain materials, we maximize on-state current (Ion) and minimize off-state current (Ioff) to obtain a TFET for high performance and low standby power capabilities. The effects of physical parameters such as aluminum content, source-gate overlap length, and gate workfunction on device performance were examined thoroughly. Further, we evaluate its radio frequency performance and confirm that it shows superb current and power gain characteristics.
- # Power Gain Characteristics
- # Low Standby Power
- # Radio Frequency Performance
- # Tunneling Field-effect Transistor
- # Drain Materials
- # High Performance Power
- # Gate Workfunction
- # High-mobility Channel
- # Current Gain Characteristics
- # Aluminum Content
