Silicon photonics for energy-efficient neuromorphic computing

We have proposed and demonstrated a method for the fabrication of a SOI platform with custom-design device layer thickness ( 1 μm, operating at λ ~ 1550 nm. The input/output waveguides can be pigtailed with standard single-mode fiber with lensed tip ensuring modal overlap of >70% (coupling loss <1.5 dB). Such a multi-input multi-output SOI platform will facilitate for CMOS silicon photonics based on-chip applications with an additional usage freedom of device layer thickness. Moreover, it can be potentially used to design SOI based stand-alone devices which can be useful at transmitters/repeaters for short-haul/long-haul optical communication.

Silicon photonic platforms are becoming more and more mature with competitive devices suitable for increasing needs of HPC (High Performance Computing) systems and datacenters. Compared to bulk III-V technologies, Si photonic technologies are suffering from the lack of integrated light source. Several works have been done in the past years to integrate laser on silicon using III-V direct bonding on top of patterned silicon. These demonstrations were using a CMOS compatible process for the silicon part but all the process steps following the introduction of the III-V material were done with small wafer diameter III-V fabrication lines. With such integrations, the cost advantage of silicon photonics based on the use of CMOS platforms and large wafer format is no more valid. In this paper we present the integration of a hybrid III-V/Si laser using a fully CMOS compatible 200mm technology. The laser is integrated in a mature photonic platform. The additional process modules required for this integration will be deeply described. These modules are localized silicon thickening using damascene process, Bragg reflector patterning with DUV lithography, III-V patterning and ohmic contact formation with no lift-off and without noble metal. This integration is compatible with a multi metal levels planar BEOL, mandatory for photonic circuit design. The first DFB lasers fabricated with this new platform are operating at 1310nm with a threshold current around 60mA, a SMSR larger than 45dB and more than 1.5mW optical power in the output waveguide. New laser designs, specifically adapted for this new process, will be introduced and fabricated.

While III-V lasers epitaxially grown on silicon have been demonstrated, an efficient approach for coupling them with a silicon photonics platform is still missing. In this paper, we present a novel design of an adiabatic coupler for interfacing nanometer-scale III-V lasers grown on SOI with other silicon photonics components. The starting point is a directional coupler, which achieves 100% coupling efficiency from the III-V lasing mode to the Si waveguide TE-like ground mode. To improve the robustness and manufacturability of the coupler, a linear-tapered adiabatic coupler is designed, which is less sensitive to variations and still reaches a coupling efficiency of around 98%. Nevertheless, it has a relatively large footprint and exhibits some undesired residual coupling to TM-like modes. To improve this, a more advanced adiabatic coupler whose geometry is varied along its propagation length is designed and manages to reach ∼100% coupling and decoupling within a length of 200 μm. The proposed couplers are designed for the particular case of III-V nano-ridge lasers monolithically grown using aspect-ratio-trapping (ART) together with nano-ridge engineering (NRE) but are believed to be compatible with other epitaxial III-V/Si integration platforms recently proposed. In this way, the presented coupler is expected to pave the way to integrating III-V lasers monolithically grown on SOI wafers with other photonics components, one step closer towards a fully functional silicon photonics platform.

The knowledge of the exact frequency of an optical source has always been one of the ultimate goals in optics. Since the discovery of the laser, complex systems have been developed to address this challenge. That effort reached a significant milestone with the advent of the femtosecond laser frequency comb that reduced the system size from an entire lab down to the bench‐top. That spurred interest in the development of integrated optical frequency synthesizers that can generate precisely different optical frequencies on demand and can be deployed widely. In this work, such an optical frequency synthesizer using supercontinuum waveguide and second harmonic generator on silicon photonics platform is demonstrated. Integrated silicon photonics based tunable continuous wave laser is phase‐locked to a microwave reference, to synthesize absolute optical frequencies in the telecom band. A relative frequency instability of 1 × 10−12 at 1 s level is achieved by utilizing an integrated self‐referencing scheme that exploits the strong 3rd order and electric‐field‐induced 2nd order nonlinearities of silicon waveguides. With this work, an all on‐chip silicon photonics based frequency synthesizer seems promising for mass production of next generation broad‐band coherent optical communication systems, spectroscopic, detection, and ranging systems and future integrated quantum systems with Hz‐level precision.

Photonic integrated circuits (PICs), implementing optical functions such as light generation, modulation, routing and detection on a single chip, are emerging as a powerful platform to realize miniaturized optical systems. These chips find applications in various fields, ranging from high-speed optical transceivers to disposable biosensors, LiDARs for detection and ranging, spectroscopic analytical sensors, etc. Silicon photonics is the field that is using silicon fabrication technologies, developed over the last decades for advanced electronic integrated circuits, to realize PI Cs. Using this approach advanced PICs can be realized on 200 mm or 300 mm wafers in high volume and at low cost. On the silicon photonics platform many device structures are readily available: Si or SiN waveguides, micro-heaters for tuning/switching, Si or Ge based modulators and photodetectors. However, other optical functions such as light generation require the integration of III-V semiconductors on the silicon wafers. This can be realized using different approaches ranging from hybrid assembly over die-towafer bonding to monolithic integration. Every approach has its advantages and disadvantages. An interesting approach that we are developing is the use of microtransfer- printing technology for the integration of III-V semiconductor devices on a silicon photonic wafer, which is a scalable and minimally-invasive approach.

In this paper we describe our work on heterogeneously integrated laser diodes on a silicon photonics platform. Different types of laser diodes are presented, different both in terms of wavelength / material platform (850 nm, 1550nm, 2000nm, 2300nm) as well as laser geometry. The integration of the III-V semiconductor materials on the silicon photonic integrated circuits is realized through adhesive die-to-wafer bonding. We will report on the realization of hybrid 850 nm VCSELs and high-speed directly and externally modulated lasers, mode-locked lasers and tunable lasers in the C-band. We also discuss our work on single wavelength laser arrays and tunable lasers in the 2um wavelength range. These integrated laser sources complete the toolkit for silicon photonics enabling highly integrated solutions for optical communication and sensing applications.

We demonstrate an ultra-broadband silicon photonic interleaver capable of interleaving and de-interleaving frequency comb lines over a 125 nm bandwidth in the extended C- and L-bands. We use a ring-assisted asymmetric Mach Zehnder interferometer to achieve a flat-top passband response while maintaining a compact device footprint. The device has a 400 GHz free spectral range to divide an optical frequency comb with 200 GHz channel spacing into two output groups, each with a channel spacing of 400 GHz, yielding a potential capacity of 78 total wavelength-division multiplexed channels between 1525 nm and 1650 nm. This device represents an important step towards realizing highly parallel integrated optical links with broadband frequency comb sources within the silicon photonics platform.

Semiconductor nanowire lasers are considered promising ultracompact and energy-efficient light sources in the field of nanophotonics. Although the integration of nanowire lasers onto silicon photonic platforms is an innovative path toward chip-scale optical communications and photonic integrated circuits, operating nanowire lasers at telecom-wavelengths remains challenging. Here, we report on InGaAs nanowire array lasers on a silicon-on-insulator platform operating up to 1440 nm at room temperature. Bottom-up photonic crystal nanobeam cavities are formed by growing nanowires as ordered arrays using selective-area epitaxy, and single-mode lasing by optical pumping is demonstrated. We also show that arrays of nanobeam lasers with individually tunable wavelengths can be integrated on a single chip by the simple adjustment of the lithographically defined growth pattern. These results exemplify a practical approach toward nanowire lasers for silicon photonics.

Atomically thin layered two-dimensional (2D) materials have provided a rich library for both fundamental research and device applications. Bandgap engineering and controlled material response can be achieved from artificial heterostructures. Recently, excitonic lasers have been reported using transition metal dichalcogenides; however, the emission is still the intrinsic energy bandgap of the monolayers. Here, we report a room temperature interlayer exciton laser with MoS2/WSe2 heterostructures. The onset of lasing was identified by the distinct kink in the "L-L" curve and the noticeable spectral linewidth collapse. Different from visible emission of intralayer excitons in monolayer components, our laser works in the infrared range, which is fully compatible with the well-established technologies in silicon photonics. Long lifetime of interlayer excitons relaxes the requirement of the cavity quality factor by orders of magnitude. Room temperature interlayer exciton lasers might open new perspectives for developing coherent light sources with tailored optical properties on silicon photonics platforms.

Silicon photonics offers tremendous potential for inexpensive high-yield photonic-electronic integration. Besides conventional dielectric waveguides, plasmonic structures can also be efficiently realized on the silicon photonic platform, reducing device footprint by more than an order of magnitude. However, neither silicon nor metals exhibit appreciable second-order optical nonlinearities, thereby making efficient electro-optic modulators challenging to realize. These deficiencies can be overcome by the concepts of silicon-organic hybrid (SOH) and plasmonic-organic hybrid integration, which combine SOI waveguides and plasmonic nanostructures with organic electro-optic cladding materials.

We demonstrate an integrated source of frequency-entangled photon pairs on a silicon photonics chip. The emitter has a coincidence-to-accidental ratio exceeding 103. We prove entanglement by showing two-photon frequency interference with a visibility of 94.6% ± 1.1%. This result opens the possibility of on-chip integration of frequency-bin sources with modulators and the other active and passive devices available in the silicon photonics platform.

The quick, reliable, and sensitive detection of bacterial contamination is desired in areas such as counter bioterrorism, medicine, and food/water safety as pathogens such as E. coli can cause harmful effects with the presence of just a few cells. However, standard high sensitivity techniques require laboratories and trained technicians, requiring significant time and expense. More desirable would be a sensitive point-of-care device that could detect an array of pathogens without sample pre-treatment, or a continuous monitoring device operating without the need for frequent operator intervention. Optical microring resonators in silicon photonic platforms are particularly promising as scalable, multiplexed refractive index sensors for an integrated biosensing array. However, no systematic effort has been made to optimize the sensitivity of microrings for the detection of relatively large discrete analytes such as bacteria, which differs from the commonly considered cases of fluid or molecular sensitivity. This work demonstrates the feasibility of using high finesse microrings to detect whole bacterial cells with single cell resolution over a full range of potential analyte-to-sensor binding scenarios. Sensitivity parameters describing the case of discrete analyte detection are derived and used to guide computational optimization of microrings and their constituent waveguides, after considering a range of parameters such as waveguide dimension, material, modal polarization, and ring radius. The sensitivity of the optimized 2.5 µm radius silicon TM O-band ring is experimentally demonstrated with photoresist cellular simulants. A multiplexed optimized ring array is then shown to detect E. Coli cells in an experimental proof of concept.

High-performance Ge photodetectors on silicon photonics platform for optical interconnect

Heating elements are used to tune the optical properties of silicon photonic devices, to stabilize operating temperatures, and to compensate for fabrication variations. In this paper, we characterize the transient thermal response and develop models for silicon photonic devices equipped with such heating mechanisms. To demonstrate the usefulness and practicality of the proposed models, we investigate pulse width modulation (PWM) drive scheme for microheaters and experimentally demonstrate its use in stabilizing microring resonators by digital driving signals (two-level voltage). Requirements on the drive frequency and duty cycle of the PWM signal to minimize optical power penalties owing to the undesired thermal ripples are discussed based on the accurately modeled thermal frequency response of the heater-ring system. It is shown that smaller duty cycles require higher drive frequencies and the maximum optical ripple for a microring resonator occurs at 65% duty cycle.

Integrated silicon photonics technology has wide applications including communication and sensing. It enables high-capacity data transmission in modern communication systems. In the meanwhile, light source integration on silicon remains to be a challenge to overcome. To achieve laser integration on silicon photonics platform with efficient coupling, in this work, a concept for integration of semiconductor laser on silicon wafer through flip-chip bonding with precise control on vertical direction (Z direction) is proposed. High vertical alignment precision of ± 50 nm can be obtained by a developed selective etching process using an etch stop layer. Furthermore, by using a multi-tip edge coupler, the horizontal misalignment tolerance with flip-chip bonded laser can be improved, with an estimated 1-dB horizontal misalignment tolerance of <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$0.6\ \mu\mathrm{m}$</tex> obtained from calculation at 1310 nm (O-band). The work paves the way towards efficient electronic-photonic heterogeneous integration.