Single Frequency Blue Lasers

A record data rate for visible light communications (VLC) using a transistor outline (TO) packaged Gallium Nitride (GaN) laser diode is reported. Using a system 3 dB bandwidth of 1.4 GHz data transmission at 15 Gb/s is reported. This is achieved due to the use of orthogonal frequency division multiplexing (OFDM) in combination with a high system signal to noise ratio (SNR) and adaptive bit loading extending the effective bandwidth to 2.5 GHz. To the best of authors knowledge this is the highest reported data rate for single channel VLC.

Gallium nitride (GaN)‐based semiconductor laser diodes (LDs) have garnered significant attention due to their promising applications. However, high‐power LDs face serious degradation issues that limit their practical use. This study investigates the degradation factors of 437 nm and 6.3 W LDs by comparing light–current–voltage (L–I–V) characteristics, transmission electron microscopy (TEM), cathodoluminescence (CL), and secondary ion mass spectroscopy (SIMS) before and after 1000‐h aging. The diffusion of mirror coating from the resonant cavity surface is identified as a key factor contributing to high‐power LD degradation, which has not been reported in milliwatt‐level LDs. Meanwhile, the mechanisms behind the LD degradation are profiled and summarized together with the diffusion and other factors. On basis of the mechanism exploration, an anti‐aging technology for high‐power GaN‐based LDs is developed by using aluminum nitride for passivation layer and sapphire materials for mirror film. This anti‐aging technology has been verified, and a nearly ten‐time degradation suppression is achieved from 1000 h. This study elucidates the degradation mechanisms of high‐power GaN LDs and provides an effective technology to extend their lifespan, thereby prompting the practical applications of high‐power LDs.

Visible light communication (VLC) based on laser diodes demonstrates great potential for high data rate maritime, terrestrial, and aerial wireless data links. Here, we design and fabricate high-speed blue laser diodes (LDs) grown on c-plane gallium nitride (GaN) substrate. This was achieved through active region design and miniaturization toward a narrow ridge waveguide, short cavity length, and single longitudinal mode Fabry–Perot laser diode. The fabricated mini-LD has a low threshold current of 31 mA and slope efficiency of 1.02 W/A. A record modulation bandwidth of 5.9 GHz (−3 dB) was measured from the mini-LD. Using the developed mini-LD as a transmitter, the VLC link exhibits a high data transmission rate of 20.06 Gbps adopting the bit and power loading discrete multitone (DMT) modulation technique. The corresponding bit error rate is 0.003, satisfying the forward error correction standard. The demonstrated GaN-based mini-LD has significantly enhanced data transmission rates, paving the path for energy-efficient VLC systems and integrated photonics in the visible regime.

The latest developments in AlGaInN laser diode technology are reviewed. The AlGaInN material system allows for laser diodes to be fabricated over a very wide range of wavelengths from u.v., i.e, 380nm, to the visible, i.e., 530nm, by tuning the indium content of the laser GaInN quantum well. Advantages of using Plasma assisted MBE (PAMBE) compared to more conventional MOCVD epitaxy to grow AlGaInN laser structures are highlighted. Ridge waveguide laser diode structures are fabricated to achieve single mode operation with optical powers of >100mW in the 400-420nm wavelength range that are suitable for telecom applications. Visible light communications at high frequency (up to 2.5 Gbit/s) using a directly modulated 422nm Galliumnitride (GaN) blue laser diode is reported. High power operation of AlGaInN laser diodes is demonstrated with a single chip, AlGaInN laser diode ‘mini-array’ with a common p-contact configuration at powers up to 2.5W cw at 410nm. Low defectivity and highly uniform GaN substrates allow arrays and bars of nitride lasers to be fabricated. GaN laser bars of up to 5mm with 20 emitters, mounted in a CS mount package, give optical powers up to 4W cw at ~410nm with a common contact configuration. An alternative package configuration for AlGaInN laser arrays allows for each individual laser to be individually addressable allowing complex free-space and/or fibre optic system integration within a very small form-factor.

Laser diodes based on Gallium Nitride (GaN) are useful devices in a wide range of applications including atomic spectroscopy, data storage and optical communications. To fully exploit some of these application areas there is a need for a GaN laser diode with high spectral purity, e.g. in atomic clocks, where a narrow linewidth blue laser source can be used to target the atomic cooling transition. We report on the continuous wave, room temperature operation of a distributed feedback laser diode (DFB-LD) with high-order notched gratings. The design, fabrication and characterization of DFB devices based on the (Al,In) GaN material system is described. A single peak emission at 408.6 nm with an optical power of 20 mW at 225 mA and a side mode suppression ratio (SMSR) of 35 dB was achieved. Additionally, we demonstrate the use of a GaN DFB-LD as a transmitter in visible optical communications system. We also present results from a DFB-LD optimized for laser cooling of Sr+.

Gallium nitride (GaN) laser diodes are becoming popular sources not only for lighting but for applications ranging from communications to quantum. This paper presents the use of a commercial, off-the-shelf laser diode, with an emission wavelength of 450 nm, for visible light communication, both in free space and for underwater scenarios. Data rates up to 15 Gbit/s have been achieved by making use of orthogonal frequency division multiplexing (OFDM). In addition, distributed feedback (DFB) lasers have been realised emitting at a single wavelength which lend themselves towards applications where high spectral purity is crucial such as atomic clocks or filtered free space transmission systems. These devices have the grating structure etched into the sidewall of the ridge and work is ongoing to measure the linewidth of these lasers with the intended application of cooling Sr+ ions.

The extended use of Gallium Nitride (GaN) transistors in power applications, such as automotive, industrial and power distribution, leads practitioners and researchers to a review of the classical driving techniques, to meet the different characteristics of such devices compared to traditional ones, such as MOS and IGBT. In particular, the smaller intrinsic capacitances of GaN transistors allow faster switching transitions, thus decreasing the power dissipation during commutations. On the other hand, the higher slope of the switching waveforms drives high frequency resonant circuit that, using slower devices, would not be excited. This paper proposes a technique to obtain an optimal pair of non-oscillating switching waveforms, which exploits time-varying resistances in the power loop. A gate charge driving technique, based on the modulation of the gate current, is exploited for shaping the optimal waveforms by means of the power transistor itself. A simulation analysis was carried out considering two different driving waveforms and studying the sensitivity of ringing as a function of their significant parameters. Such analysis highlights that the optimal switching waveforms can be obtained by means of several driving shapes. Finally, a comparison with the RC snubbered circuit, in terms of efficiency and ringing, is reported to highlight the advantages of the proposed technique.

We have realised InGaN/GaN distributed feedback laser diodes emitting at a single wavelength in the 42X nm wavelength range. Laser diodes based on Gallium Nitride (GaN) are useful devices in a wide range of applications including atomic spectroscopy, data storage and optical communications. To fully exploit some of these application areas there is a need for a GaN laser diode with high spectral purity, e.g. in atomic clocks, where a narrow line width blue laser source can be used to target the atomic cooling transition. Previously, GaN DFB lasers have been realised using buried or surface gratings. Buried gratings require complex overgrowth steps which can introduce epi-defects. Surface gratings designs, can compromise the quality of the p-type contact due to dry etch damage and are prone to increased optical losses in the grating regions. In our approach the grating is etched into the sidewall of the ridge. Advantages include a simpler fabrication route and design freedom over the grating coupling strength.Our intended application for these devices is cooling of the Sr+ ion and for this objective the laser characteristics of SMSR, linewidth, and power are critical. We investigate how these characteristics are affected by adjusting laser design parameters such as grating coupling coefficient and cavity length.

Monomode laser diodes in the wavelength range around 1.15µm are of particular interest for various kinds of applications, including frequency doubling where a large part of the spectral range from yellow to green currently remains inaccessible. For efficient frequency conversion, single-frequency laser light, as e.g. obtained from Distributed Feedback Laser (DFB) laser diodes, is an essential prerequis ite. One particular challenge at this wavelength range around 1.15µm is to find a gain medium with high internal efficiency. For broad area (BA) lasers, good results have recently been achieved using quantum dots (QDs) or highly strained InGaAs quantum wells (QWs) [1]. In the following, first results for high performance monomode QD DFB laser diodes in the wavelength range of interest are discussed. The spectral gain properties of the underlying QD active region allow to realize DFB lasers with emission spanning an extremely broad wavelength range of 65nm ranging from around 1095nm to 1160nm based on the identical laser structure. Keywords: Quantum Dot (QD), Distributed Feedback (DFB), Laser Diodes, InGaAs/GaAs

Several important applications in optical communications require high power fiber coupled laser sources operating at 1.3 /spl mu/m, 1.48 /spl mu/m and 1.55 /spl mu/m. Semiconductor diode lasers for these wavelengths can be fabricated using the InP/lnGaAsP material system. High power operation requires careful selection of the active region, p and n doping and the lateral waveguide structure. Additionally, distributed feedback (DFB) lasers require appropriate choice of grating feedback. High power, narrow linewidth and low noise single mode diode laser sources operating at 1.3 /spl mu/m and 1.55 /spl mu/m wavelengths have applications in cable television transmission systems, microwave photonics, interferometric sensors and as an alternative to diode-pumped solid state lasers. High output power is desirable to overcome losses in external modulators and for large scale distribution systems. It is particularly important for 1.3 /spl mu/m applications as reliable and efficient fiber amplifiers are not commercially available at this wavelength. 1.3 /spl mu/m DFB lasers with 440 mW chip power, over 150 mW fiber coupled power and 100 kHz linewidth have been demonstrated.

In this paper we present an experimental analysis of the effect of RF modulation injection current in DFB and FP lasers nearthe first period doubling bifurcation (PDB). By increasing the amplitude of the modulation frequency at the onset of PDB thefirst results of a virtual Hopf phenomenon like behavior has been observed in both types of lasers. We characterized thisobservation by increasing the amplitude of the current modulation where two peaks appear in the spectrum, approaching oneto the other until fmally merging the onset of period doubling bifurcation as predicted by theory. The same virtual Hopfbehavior was observed when we set the amplitude modulation at a fixed value and we sweep the frequency modulation at theonset of the PDB point.Keywords: Laser Diode, Nonlinear Dynamics, Period Doubling Bifurcations. 1. INTRODUCTION Nonlinear dynamics in diode lasers has been the subject of many theoretical and experimental investigations in the lastdecade as they show a rich variety of irregular behavior in their route to chaos1. A single frequency diode laser is commonlystudied by a rate equation model which describes the time evolution of the photon and carrier densities. In these equations,the inclusion of an additional degree of freedom as modulation of the injection current, external light injection or opticalfeedback is needed for nonlinear dynamics to appear2.To our knowledge, the nonlinear behavior in semiconductor diode lasers has been extensively studied by many authors usingdelayed optical feedback and strong current modulation. In the former, the observed route to chaos was through successivesubharmonic bifurcations or by quasi periodic route3'4. In the strong current modulation case the period sequence wastruncated by period tripling before the onset of chaos5'6.On the other hand, the onset of a period doubling bifurcation point in many physical systems brings to nonlinear phenomenasuch as: 1) small signal amplification, 2) shift and suppression of the bifurcation point and 3) the emergence of a closelyspaced set of peaks in the frequency response7.In semiconductor lasers the parametric amplification was observed by Harth and co-workers8'9 which was analyzed byWiesenfeld few years after'°. In the study developed by Wiesenfeld in ref. 10, semiconductor lasers were proposed as goodcandidate to study the rich variety of nonlinear phenomena near period doubling bifurcations. A recent study has shown thatthe effect of Langevin noise in period doubling semiconductor lasers has a virtual Hopf ur12 previously predicted byWiesenfeld'34 as a virtual Hopf phenomenon in systems undergoing a period doubling bifurcations in the presence ofexternal noise.In the present study we have experimentally investigated the nonlinear dynamics of diode lasers in the period doublingbifurcation point. We study the influence of the amplitude modulation in Distributed Feedback (DFB) lasers near perioddoubling bifurcations. In Fabry-Perot (FP) lasers we performed as well the same study as DFB lasers and the analysis of thefrequency modulation near period doubling bifurcation. So in section II we described the experimental procedure for theonset of the first period doubling bifurcation performed in commercial DFB and FP InGaAsP diode lasers at 1,3 tm emission

The radio frequency spectrum has become very congested and scarce. A response to this dilemma is the implementation of visible light communications (VLC) technology, which is enabled by the dramatic development of light emitting diodes (LEDs) and laser diodes (LDs). VLC has become the most popular emerging telecommunication technology. This is due to the interesting advantages that it provides, which include an unlicensed and large bandwidth, a high throughput capability and a low implementation cost. VLC needs a pivot network in medium and long distance transmissions. The amplify‐and‐forward scenario between the backbone network and VLC is cost‐effective owing to its simplicity when compared to the decode‐and‐forward scenario. MPSK‐CSK is a typical example of cascaded systems in AF scenario with VLC where the backbone channel utilises PSK to convey the message. In this paper, we investigate a forward error correction scheme for cascaded MPSK‐CSK systems. A convolutional encoder is added to the MPSK‐CSK scheme to construct the hybrid trellis coded modulation scheme. Selected 8HTCM systems using set partitioning are investigated and results for a Gaussian channel are presented. Numerical results reveal that 8HTCM achieves up to 2.129 dB of asymptotic coding gain when compared to the corresponding un‐coded MPSK‐CSK system.

Single longitudinal mode operation of laterally coupled distributed feedback (DFB) laser diodes (LDs) based on GaN containing 10th-order surface Bragg gratings with V-shaped grooves is demonstrated using i-line stepper lithography and inductively coupled plasma etching. A threshold current of 82 mA, a slope efficiency of 1.7 W/A, a single peak emission at 404.5 nm with a full width at half maximum of 0.04 nm and a side mode suppression ratio of > 23 dB at an output power of about 46 mW were achieved under pulsed operation. The shift of the lasing wavelength of DFB LDs with temperature was around three times smaller than that of conventional ridge waveguide LDs.

Performance analysis of colour coded multiple access (CCMA) orthogonal frequency division multiplexing (OFDM) visible light communication (VLC) System is discussed in this paper. First, characteristics of optical OFDM are studied. Second, CCMA is achieved using three laser diodes (LD): red, green and blue LDs. Finally, OFDM-modulated signals are optically modulated with red, green and blue LDs (RGB LDs). Then these three optical signals are combined together to form white light which illuminates as well as provides high-speed data transmission. The performance of the proposed CCMA OFDM VLC system is studied using constellation diagrams, signals and spectrum comparisons. The system is simulated for the data rate of 10 Gbps.

We propose a new kind of distributed feedback (DFB) semiconductor laser based on the sampled Moire grating (SMG) integrated with a grating reflector (GR). Coupling coefficient along the laser cavity can be controlled, and $\pi $ phase shift ( $\pi $ -PS) can be introduced by SMG. The GR, which is a uniform sampled grating, can provide light reflection instead of high reflection (HR) facet coating. Thus, the front and rear facets are both coated with anti-reflection coatings (AR/AR) to avoid the influence of random grating phase at the HR facet. Therefore, more output power, better single longitudinal mode (SLM) operation, and higher wavelength precision can be simultaneously achieved, compared with traditional DFB lasers with AR/HR facet coatings. As an example, an 8-channel DFB laser array based on the proposed structure has been simulated. The proposed laser may benefit the applications requiring both high output power and wavelength precision, such as wavelength division multiplexing (WDM) transmission systems and gas sensors.