Size-Dependent Equilibrium Shapes of Solid Pb Inclusions in Al

High purity β—SiC films have been epitaxially grown on Si (100) and off-axis Si (100) substrates. Conventional chemical vapor deposition at 1633K and 1 atm using SiH4 and C2H4 reactants in an H2 carrier gas was employed for this growth. Large differences in lattice parameter and thermal coefficients of expansion between the film and the substrate were partially compensated for by growing aninitial “conversion layer.” Plan view and cross—sectional transmission electron microscopy were utilized to study the conversion layer and the defects present in the films. A high density of stacking faults and dislocations were present in allthe films grown on Si, however, antiphase boundaries were eliminated when certain off—axis Si (100) substrates were employed. The effects of misorientation angle and substrate preannealing were investigated. The electrical properties of the β-SiC films were also studied using differential capacitance—voltage and Hall effect measurements as well as the I—V characteristics of Au—β—SiC Schottky diodes. It was found that the elimination of antiphase boundaries reduced leakage current but did not significantly effect carrier concentration or Hall electron mobility. Finally, the I—V characteristics of a Metal—Semiconductor—Field—Effect—Transistor (MESFET) have been evaluated for a β—SiC filmon an on—axis Si (100) substrate.

Tuning of CeO2 buffer layers for coated superconductors through doping

Superconducting copper fluoride ${\mathrm{La}}_{0.7}{\mathrm{Sr}}_{1.3}{\mathrm{Cu}(\mathrm{O},\mathrm{F})}_{4+\ensuremath{\delta}}$ with ${T}_{c}=55$ K had been synthesized via the solid phase fluorination of ${\mathrm{La}}_{0.7}$${\mathrm{Sr}}_{1.3}$Cu${\mathrm{O}}_{3.25}$ with Cu${\mathrm{F}}_{2}$ at relatively low temperature. The fluoride is a derivative of its precursor, but its lattice constant a is expanded from 3.7547(5) to 3.9368(7) \AA{}, while its lattice parameter $c$ is expanded from 12.896(3) to 13.075(4) \AA{}. The obvious difference in lattice parameters and crystal structure seems to distinguish this compound from the superconducting ${\mathrm{Sr}}_{2}\mathrm{Cu}{\mathrm{O}}_{2}{\mathrm{F}}_{4+\ensuremath{\delta}}$ reported in a recent study. It gives strong evidence for superconductivity with reduced Cu${\mathrm{O}}_{2}$ sheets while in the presence of apical oxygen or fluorine.

The positions of Higher Order Laue Zone (HOLZ) Lines, visible in the bright field discs of Convergent Beam Electron Diffraction (CBED) patterns, are frequently used to determine the lattice parameters or strain present in phases observed in the Analytical Electron Microscope (AEM). The technique usually relies upon the use of a “standard” sample of known lattice parameter that has the same crystal structure as the unknown phase and is of similar average atomic number. The relative movement of particular HOLZ lines in the unknown phase with respect to the standard are used to calculate the difference in lattice parameters between the standard and the unknown. The thickness of the samples is not taken into consideration. This paper describes the results of both computer simulations and cold stage experiments in the AEM which lead us to conclude that the HOLZ lines are not independent of thickness, particularly in the presence of highly dynamical zero layer diffraction effects.

In this study, we report that the carrier mobility of 2%-La-doped BaSnO3 (LBSO) films on (001) SrTiO3 and (001) MgO substrates strongly depends on the thickness, whereas it is unrelated to the film/substrate lattice mismatch (+5.4% for SrTiO3 and −2.3% for MgO). The films exhibited large differences in lattice parameters, lateral grain sizes (∼85 nm for SrTiO3 and ∼20 nm for MgO), surface morphologies, threading dislocation densities, and misfit dislocation densities. However, the mobility dependences on the film thickness in both cases were almost the same, saturating at ∼100 cm2 V−1 s−1, while the charge carrier densities approached the nominal carrier concentration (=[2% La3+]). Our study clearly indicates that the carrier mobility of LBSO films strongly depends on the thickness. These results would be beneficial for understanding the carrier transport properties and fruitful to further enhance the mobility of LBSO films.

Synchrotron x-radiation in a double-crystal geometry has been used for topography and rocking-curve measurements to study imperfections in single-crystal HP/HT synthetic diamonds grown from (111) seeds by the reconstitution technique. The influence that clusters of small opaque particles (sometimes called `pin-point-like inclusions') have upon lattice parameter differences, as well as upon relative lattice tilts within each sample, was of particular interest in this study. Rocking curves measured with a large beam diameter (illuminating entire specimens) gave widths (FWHM) in the range 5 - 30 seconds of arc in a non-dispersive Bragg - Bragg diffraction geometry in which good diamond crystals give and for which the calculated theoretical minimum width is under . Rocking curves were also recorded for small regions of each crystal, using a translatable pin-hole, and these showed that some diamonds had relatively narrow rocking curves in selected areas (of diameter). Epochs of crystal growth were recorded in series of x-ray topographs, taken at intervals of 2.5 seconds of arc. Such series were taken for all four principal azimuths (, 90, 180 and ) of the incident beam by rotating the sample about the normal to the Bragg plane. This procedure yielded important information about lattice parameter distribution and lattice tilt across entire samples. For the samples heavily populated with pin-point-like inclusions it was concluded that there is a possible slight variation in lattice parameter values in some regions of the crystal but most of it falls below the adopted angular step resolution, although better accuracy can be achieved. Relative tilt measurements revealed that there are large misorientations of those parts of the crystal which are close to external outcrops of {111} boundaries. In this case of (111) oriented diamond samples, three separate regions with different tilts can be attributed to the three parts of the crystal close to optically visible {111} growth-sector boundaries.

This review surveys rapid solidification (RS) processing of titanium alloys. The attributes of and requirements for RS are discussed along with techniques of RS including powder, flake, fibre, and wire production. Compaction and processing techniques are presented followed by a description of the metastable constitutional effects which can result from RS – solid solubility extension and formation of metastable crystalline, quasicrystalline, and amorphous phases. The microstructures that can develop through RS, and their potential subsequent decomposition, are discussed. Effects of additions of dispersoid forming elements, metalloids, and eutectoid formers to enhance mechanical property behaviour are described. The final section deals with the impact of RS on titanium base intermetallics. Throughout the review, the emphasis is on the correlation of microstructures with properties and it is shown where advantages are to be gained from the RS approach compared with conventional ingot metallurgy techniques. Although there are advantages to be gained by RS processing for the titanium system the enhancements in behaviour have not yet been shown to be as great as in other systems such as aluminium; however, it is clear that further work is required to define fully the potential of RS processing of titanium based alloys.

The behaviour of misfit dislocations introduced to accommodate differences in lattice parameter at the interface between two epitaxially oriented crystals of different materials is studied as a function of the degree of interdiffusion of the constituents. The forces considered to be acting on the dislocations are the elastic interaction force between misfit dislocations, the homogeneous force arising from the difference in atomic volume of the constituents, and the osmotic force produced by the net vacancy flux accompanying interdiffusion. In the elasticity calculations, image forces and end effects, including buckling terms, are analysed. The results are compared with prior treatments of related problems, all of which have involved different boundary conditions, and none of which has included considerations if the osmotic force together with the other forces.

Strained-layer semiconductor films offer tremendous potential with regards to optoelectronic applications for high speed communications, mobile communications, sensing, and novel logic devices. It is an unfortunate reality that many of the possible film/substrate combinations that could be exploited technologically are off limits because of large differences in lattice parameters, chemical compatibilities, or thermal expansion rates. These mechanical, chemical, and thermal incompatibilities manifest themselves primarily in terms of lattice defects such as dislocations and antiphase boundaries, and in some cases through enhanced surface roughness. An additional limitation, from a production point of view, is money. Device manufacturers as a rule want the cheapest substrate possible. Freeing the heteroepitaxial world of the bonds of (near) lattice matching would vastly expand the types of working devices that could be grown. As a result, a great deal of effort has been expended finding schemes to integrate dissimilar film/substrate materials while preserving the perfection of the film layer. One such scheme receiving significant attention lately is the so-called compliant substrate approach.

Efficacious symmetry-adapted atomic displacement method for lattice dynamical studies

Deposition of silver on NaCl, KCl, and LiF with 20 Å · s−1 in vacuum (5 · 10−6 torr) and electronographical determination of changes of lattice constant. Precision of measurement better than ± 0.004 Å (reflections {400} and {220}). Thickness of films from 50 to 500 Å with intervals of 10 Å. The lattice parameter of films till to 115 Å in thickness did'nt differ from the parameter of bulk silver (4.086 Å). At about 175 Å the parameter reached minimum (about 4.00 Å) and took again the parameter of bulk material with the film thickness of 215 Å. With polycrystals no changes of lattice parameters occurred. – The phenomenon is connected to growth mechanism, two‐dimensional and three‐dimensional nucleation and to the differences in lattice parameters of substrate and deposit.

Heterojunctions GaAs–AlxGa1−xAs involved in the elaboration of IR laser diodes have been studied. The difference in lattice parameter between the GaAs substrate and the aluminum-substituted epitaxic layer AlxGa1−xAs has been measured accurately on a double-crystal spectrometer for a series of compositions. These data coupled with radius of curvature determination have permitted calculation of the stress in the layer and the bulk lattice parameter of AlxGa1−xAs. characterization of the defects introduced during the liquid-phase epitaxy has been performed by X-ray topography.

Magnetic investigations of organic conductors, β′-type [Pd(dmit)2]2, have been performed by Electron Paramagnetic Resonance (EPR) measurements. We found that most of them except one compound underwent antiferromagnetic transitions. Although they are isostructural with little differences in lattice parameters, their spin–spin correlations and antiferromagnetic transition temperatures show strong counter ion dependence. The EPR g-values of Pd(dmit)2 cannot be explained within the framework of isolated radical description which is a good approximation for conventional organic conductors. The electronic structures of a series of molecular conductors based on Pd(dmit)2 at ambient pressure are discussed from microscopic points of view.

Determination of lattice parameter and elastic properties of porous silicon by X-ray diffraction

XRD and electron microscope study of an as-cast 26.6% chromium white iron microstructure