Spectroscopy Methods for Low-Dimensional Systems

The 12th National Conference on Solid State Physics and Materials Science (SPMS2021) gathered various notable scientists (7 plenary speakers and 34 invited speakers). Attending the conference and actively participating in the debate were more than 450 scholars with an interest in the topic. Four hundred reports were divided into five specialized sessions, including (A) physics and magnetic materials, (B) semiconductor and dielectric physics, (C) semiconductor and dielectric materials and devices, (D) biomedical materials and materials for agriculture, energy, and the environment, and (E) composite materials - metals, ceramics, and Vietnam-Korea sessions on applied physics. In addition, the Organizing Committee received numerous full-text reports that had been submitted to the Journal of Science and Technology (Vietnam Academy of Science and Technology) following a rigorous review procedure. SPMS2021 co-organized by the Vietnam Physical Society, the Vietnam Materials Research Society (V-MRS), the Institute of Physics, the Institute of Materials Science (Vietnam Academy of Science and Technology), Hanoi University of Science and Technology, Vietnam National University (VNU), Phenikaa University, and Can Tho University was held on 13 – 15 August 2022 in Can Tho City after nearly 9 months of postponement due to the COVID-19 pandemic. The conference has attracted 7 plenary speakers, 34 invited speakers, and over 450 scientists (Figure 1, Table 1, and Table 2) 1. It is not only a sizable and esteemed scientific conference that draws the interest of the Vietnamese scientific community, but it is also a venue for getting together, exchanging ideas, and disseminating the most recent advancements in the SPMS sector. Since 1995, it has been conducted continuously every two years. Many scientists are generally interested in the domains of solid-state physics and materials science, which have a wide range of activities and exceptional accomplishments in both basics and applications in Vietnam.

Ultralow thermal conductivity of BaAg2SnSe4 and the effect of doping by Ga and In

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pss Rapid Research Letters – the fastest peer‐reviewed publication medium in solid state physics

It is with great pleasure that we present this special issue focused on topological structures in ferroic materials. It is composed of invited contributions from the International Workshop on Topological Structures in Ferroic Materials held at the University of South Wales, Sydney, Australia from 19-21 st May 2015. The aim of the workshop was to capture current research interests regarding interfaces, domains, domain walls, vortices and skyrmions in ferroics as an emerging and highly active fi eld in solid state physics and materials science. Signifi cant emphasis was placed on understanding the fundamental commonalities that bridge topological defects across various types of ferroic materials, and therefore lessons learned on how new and groundbreaking functionalities afforded by the aforementioned concepts could be translated into emerging technologies.

The joint International Symposium RCBJSF–2014–FM&NT successfully has united two international events – 12th Russia/CIS/Baltic/Japan Symposium on Ferroelectricity (RCBJSF-12) and 9th International Conference Functional Materials and Nanotechnologies (FM&NT-2014). The RCBJSF symposium is a continuation of series of meetings on ferroelectricity, the first of which took place in Novosibirsk (USSR) in 1976. FM&NT conferences started in 2006 and have been organized by Institute of Solid State Physics, University of Latvia in Riga. In 2012 the International program committee decided to transform this conference into a traveling Baltic State conference and the FM&NT-2013 was organized by the Institute of Physics, University of Tartu, Estonia. In 2014 the joint international symposium RCBJSF–2014–FM&NT was organized by the Institute of Solid State Physics, University of Latvia and was part of Riga – 2014, the European Capital of Culture event. The purpose of the joint Symposium was to bring together scientists, students and high-level experts in solid state physics, materials science, engineering and related disciplines. The number of the registered participants from 26 countries was over 350. During the Symposium 128 high quality scientific talks (5 plenary, 42 invited, 81 oral) and over 215 posters were presented. All presentations were divided into 4 parallel sessions according to 4 main topics of the Symposium: Ferroelectricity, including ferroelectrics and multiferroics, pyroelectrics, piezoelectrics and actuators, integrated ferroelectrics, relaxors, phase transitions and critical phenomena. Multifunctional Materials, including theory, multiscale and multiphenomenal material modeling and simulation, advanced inorganic, organic and hybrid materials. Nanotechnologies, including progressive methods, technologies and design for production, investigation of nano- particles, composites, structures, thin films and coatings. Energy, including perspective materials and technologies for renewable and hydrogen energy, fuel cells, photovoltaics, LEDs, OLEDs. Based on these reports, 48 papers are included in this volume of IOP Conference Series: Materials Science and Engineering. Additional information about RCBJSF–2014–FM&NT is available at the homepage http://www.fmnt.lu.lv. The Organizing Committee would like to thank all the speakers, contributors, session chairs, referees and other involved staff for their efforts in making the RCBJSF–2014–FM&NT successful. Sincerely, organizers of the event Andris Sternberg Liga Grinberga Anatolijs Sarakovskis Martins Rutkis

Quasiperiodic and Disordered Interfaces in Nanostructured Materials

With the advent of new high-power, short-pulse laser facilities in combination with novel technologies for the production of highly brilliant, intense γ beams (like, e.g., Extreme Light Infrastructure – Nuclear Physics (ELI-NP) in Bucharest, MEGaRay in Livermore or a planned upgrade of the HIγS facility at Duke University), unprecedented perspectives will open up in the coming years for photonuclear physics both in basic sciences as in various fields of applications. Ultra-high sensitivity will be enabled by an envisaged increase of the γ-beam spectral density from the presently typical 102γ/eVs to about 104γ/eVs, thus enabling a new quality of nuclear photonics [1], assisted by new γ-optical elements [2]. Photonuclear reactions with highly brilliant γ beams will allow to produce radioisotopes for nuclear medicine with much higher specific activity and/or more economically than with conventional methods. This will open the door for completely new clinical applications of radioisotopes [3]. The isotopic, state-selective sensitivity of the well-established technique of nuclear resonance fluorescence (NRF) will be boosted by the drastically reduced energy bandwidth (<0.1%) of the novel γ beams. Together with a much higher intensity of these beams, this will pave the road towards a γ-beam based non-invasive tomography and microscopy, assisting the management of nuclear materials, such as radioactive waste management, the detection of nuclear fissile material in the recycling process or the detection of clandestine fissile materials. Moreover, also secondary sources like low-energy, pulsed, polarized neutron beams of high intensity and high brilliance [4] or a new type of positron source with significantly increased brilliance, for the first time fully polarized [5], can be realized and lead to new applications in solid state physics or material sciences.

An overview of the ion beam laboratory at Beijing Institute of Physics

The Jahn-Teller effect is one of the most fascinating phenomena in modern physics and chemistry, providing a general approach to understanding the properties of molecules and crystals and their origins. The effect inspired one of the most important recent scientific discoveries, the concept of high-temperature superconductivity. This comprehensive volume presents the background of the theory and its main applications in physics and chemistry, along with more recent achievements. Full descriptions are presented alongside thorough references to original material. The 2006 book contains over 200 figures to aid visual explanation and avoids bulky mathematical deductions and overly technical language. It is intended for graduate students and academic researchers working in solid state physics, quantum chemistry, crystallography, spectroscopy, and materials science.

We present the first systematic work for deriving a posteriori error estimates for general non-polynomial basis functions in an interior penalty discontinuous Galerkin (DG) formulation for solving eigenvalue problems associated with second order linear operators. Eigenvalue problems of such types play important roles in scientific and engineering applications, particularly in theoretical chemistry, solid state physics and material science. Based on the framework developed in [{\it L. Lin, B. Stamm, http://dx.doi.org/10.1051/m2an/2015069}] for second order PDEs, we develop residual type upper and lower bound error estimates for measuring the a posteriori error for eigenvalue problems. The main merit of our method is that the method is parameter-free, in the sense that all but one solution-dependent constants appearing in the upper and lower bound estimates are explicitly computable by solving local and independent eigenvalue problems, and the only non-computable constant can be reasonably approximated by a computable one without affecting the overall effectiveness of the estimates in practice. Compared to the PDE case, we find that a posteriori error estimators for eigenvalue problems must neglect certain terms, which involves explicitly the exact eigenvalues or eigenfunctions that are not accessible in numerical simulations. We define such terms carefully, and justify numerically that the neglected terms are indeed numerically high order terms compared to the computable estimators. Numerical results for a variety of problems in 1D and 2D demonstrate that both the upper bound and lower bound are effective for measuring the error of eigenvalues and eigenfunctions.

Single photon counting pixel detectors become increasingly popular in various 2-D X-ray imaging techniques and scientific experiments mainly in solid state physics, material science and medicine. This paper presents architecture and measurement results of the UFXC32k chip designed in a CMOS 130 nm process. The chip consists of about 50 million transistors and has an area of 9.64 mm × 20.15 mm. The core of the IC is a matrix of 128 × 256 pixels of 75 μm pitch. Each pixel contains a CSA, a shaper with tunable gain, two discriminators with correction circuits and two 14-bit ripple counters operating in a normal mode (with energy window), a long counter mode (one 28-bit counter) and a zero-dead time mode. Gain and noise performance were verified with X-ray radiation and with the chip connected to Si (320 μm thick) and CdTe (750 μ m thick) sensors.

Positron annihilation is a well established method in solid state physics and material science. The positron being a very sensitive probe, can give very precise information on the momentum distribution of electrons in metals and alloys as well as on lattice defects in crystals. Starting with the energy distribution of positrons from a radioactive decay, the current development is directed more to monoenergetic positrons of variable energy and of high intensity. Pulsed and continuous beams of moderated positrons have been designed and developed to study very efficiently surface and near surface regions in metals and semiconductors. Especially a pulsed positron beam with narrow beam pulses (∼ 150 ps) enables positron lifetime experiments as a function of the positron energy. The impact of intense positron beams is straightforward: a decrease of the counting time. There are various possibilities and approaches to realize intense positron beams. Developments at several institutes in Europe are under way. The aim is to obtain a beam intensity in the order of ∼ 10 10 positrons/sec. Parallel to the installment of intense positron beams, the development of positron microscopes is pursued. Two types of positron microscopes are being set up: a scanning positron microscope with a pulsed beam of 100 ps and a beam diameter of 1 μm and a positron reemission microscope with about the same beam diameter

Over the past decade, laser processing of semiconductors has developed into an area of widespread interest in solid state physics, materials science, and semiconductor device technology. Initially, most of the work on pulsed laser processing was carried out with solid state lasers such as ruby and Nd:YAG lasers. These lasers have several inherent characteristics that make them less than ideal for studies of laser processing and that would seemingly prohibit their use in many commercial applications. More recently, results which demonstrate that ultraviolet excimer lasers offer many desirable characteristics for the laser processing of materials, have been reported in the literature. Solar cells are relatively simple semiconductor devices that are of considerable interest in their own right and provide a useful testing ground for the application of laser techniques to semi-conductor processing. In this paper, some important aspects of pulsed laser processing of semiconductors are reviewed, the advantages of excimer lasers for such work are assessed, the present status of laser processing of high-efficiency solar cells is discussed, and finally the possible future directions of this type of work are briefly mentioned.

Progress of thermodynamics has been stimulated by the findings of a variety of fields of science and technology. The principles of thermodynamics are so general that the application is widespread to such fields as solid state physics, chemistry, biology, astronomical science, materials science, and chemical engineering. The contents of this book should be of help to many scientists and engineers.