Spot-size converted polarization-insensitive SOA gate with a vertical tapered submicrometer stripe structure

The GaInNAs range of compounds is suitable for optoelectronic device applications in 1.3 and 1.55 µm lasers, because of the large conduction band discontinuity resulting in good electron confinement and improved temperature characteristics. GaInNAs is suited to wavelength division multiplexing (WDM) applications in high-speed optical communication networks. Since WDM techniques are available for steady-state traffic, there is a need for an all-optical packet-switching layer at the end of the optical to electronic conversion domain, which consists of all-optical gates, such as semiconductor optical amplifiers, channel dropping filters, interferometers, resonant cavity enhanced photodetectors, and optical random access memory elements. In these planar lightwave circuits, GaInNAs microspheres with their morphology-dependent resonances, can be used as compact optical filtering elements. The spectral filtering characteristics of GaInNAs microspheres are analysed by calculating the elastic scattering spectra optimised for both transverse electric and transverse magnetic resonance modes at the optical communication wavelengths of 1.3 and 1.55 µm.

A novel wideband polarization-insensitive semiconductor optical amplifier (SOA) gate containing compressively strained InGaAs quantum wells and tensile-strained InGaAs quasi-bulk layers is developed. The fabricated SOA gates have a wide 3-dB optical bandwidth of 102 nm, less than 0.8-dB polarization sensitivity, more than 50-dB extinction ratio, and less than 75-mA fiber-to-fiber lossless operating current. (C) 2004 Society of Photo-Optical Instrumentation Engineers.

A novel fabrication method and structure of a planar lightwave circuit (PLC) platform for hybrid integration of an optical module by passive alignment technology is presented. Precise formation of V-grooves in the PLC platform can be easily obtained by the proposed process. The passive alignments of optical elements, including optical fiber, are achieved in one-mask. LD modules were implemented by the proposed method.

This paper presents numerical calculations and experimental results for two cascaded semiconductor optical amplifiers (SOAs) in a counterpropagating configuration for an all-optical switching operation. A detailed theoretical analysis with regard to the gain evolution and the extinction ratio (ER) through the SOAs' cavities show that the two cascaded SOAs have improved performance over the single SOA configuration. A measured ER up to 20 dB is obtained for close contra-directional signal wavelengths and for a wide range of optical input powers. An all-optical switching operation is realized for 2.5-GHz data pulses, and its feasibility is demonstrated with an ER higher than 12 dB over a wide range of wavelength.

Wavelength division multiplexing (WDM) systems are widely deployed in high-capacity long-haul transmission systems. They can provide cost-effective additional capacity on fibers overloaded by the increase in data traffic. Current WDM systems are used mainly for point-to-point transmission links. Next generation WDM technologies are expected to provide full functionality at both the system and network levels. Next generation WDM system will require many optical components, including optical filters, add/drop multiplexers, circuit switches and wavelength converters. Optical components using planar lightwave circuits (PLCs) are now widely used in WDM systems. Arrayed waveguide gratings (AWGs), in particular, play an important role in current WDM systems. In the next generation system, optical components using PLCs are expected to provide many functions that counterparts cannot. In this paper, we will describe the current and future WDM components using PLCs, focusing on AWGs and switchable add/drop filters.

Semiconductor optical amplifiers (SOA) are indispensable both for optical time domain multiplexed (OTDM) and wavelength division multiplexed (WDM) optical networks. To fully utilize the potential of SOAs, evolution of a short optical pulse inside SOAs is important. To understand the pulse propagation dynamics, one must know small signal gain, carrier recombination time, linewidth enhancement factor, saturation energy, the differential gain coefficient, and other parameters. Here, we present a pump-probe technique to simultaneously measure these five quantities. The technique is insensitive to pulse shaping and broadening in the SOA, which occurs to the optical pulse propagating through the SOA.

A simple theory for the crosstalk in multichannel wavelength-division multiplexing (WDM) communication systems caused by the cross gain saturation in semiconductor optical amplifier (SOA) is developed. It is shown that increasing the carrier recombination lifetime while reducing the differential gain in the SOA greatly mitigates the crosstalk. An SOA using type-II quantum wells with reduced recombination probability is designed, and its characteristics are numerically modeled for a number of different WDM systems. It is shown that when used as a preamplifier or in local/metro networks with a small number of amplifiers, error-free transmission can be achieved with the type-II SOA.

We present for the first time to our knowledge a comprehensive investigation of linear optical cross talk in an integrated switch-a packaged 4 X 4 semiconductor optical amplifier (SOA) gate switch matrix in InGaAsP-InP and show that the cross talk is a combination of interferometric and noninterferometric effects occuring on the chip.

Recently, photonic networks based on wavelength division multiplexing (WDM) systems have developed considerably in response to the explosive growth of the Internet. Devices with novel functions are required for photonic networks, and planar lightwave circuits (PLCs) are being considered to meet this need. This paper reports recent progress on PLC- type devices with advanced functions developed for the photonic networks. We describe fabrication techniques and device applications for silica and silicone polymer based PLC technologies.

Silica-based planar lightwave circuit (PLC) devices are starting to be introduced into commercial optical communication systems. PLC devices such as optical splitters, wavelength-insensitive coupler (WINC) arrays, and hybrid- integrated wavelength-division-multiplexing (WDM) transceivers are used to construct cost effective optical access systems. In trunk lines, on the other hand, arrayed-waveguide gratings (AWG) are employed for dense WDM systems to increase the transmission capacity. This paper reviews the current status and recent progress on these practical PLC devices.

While silica waveguide PLC products have been deployed in various systems and applications, hybrid integration of semiconductor opto-electronic devices on silica-based planar lightwave circuit (PLC) has become the mainstream platform for small form factor, low-cost and high volume integrated transceiver modules. One of the main benefits of hybrid integration is the wafer-scale process, which greatly reduces chip/module size and assembly cost. This paper reviews the development of this technology, and as an example, presents a hybrid integrated transmitter with four wavelengths on silica PLC chip for LX4 and 10GbE applications.

The design, fabrication, and characterization of an 8×8 lossless optical switch, based on semiconductor optical amplifier (SOA) gates, is reported. It comprises three stages of 2×2 switches into an 8×8 Banyan switch, for a total of 48 SOAs. Three SOAs on each optical path provide gain to compensate for on-chip and fiber coupling loss, thereby making the optical switch lossless. All 64 optical paths demonstrate error-free 10 Gbps NRZ PRBS-31 transmission with at least 30 dB signal-to-noise ratio and less than 0.9 dB power penalty.

Based on the single channel characterization of a Silicon Photonics (SiP) transceiver with Semiconductor Optical Amplifier (SOA) and semiconductor Mode-Locked Laser (MLL), we evaluate the optical power budget of a corresponding Wavelength Division Multiplexed (WDM) link in which penalties associated to multi-channel operation and the management of polarization diversity are introduced. In particular, channel cross-talk as well as Cross Gain Modulation (XGM) and Four Wave Mixing (FWM) inside the SOA are taken into account. Based on these link budget models, the technology is expected to support up to 12 multiplexed channels without channel pre-emphasis or equalization. Forward Error Correction (FEC) does not appear to be required at 14 Gbps if the SOA is maintained at 25 °C and MLL-to-SiP as well as SiP-to-SOA interface losses can be maintained below 3 dB. In semi-cooled operation with an SOA temperature below 55 °C, multi-channel operation is expected to be compatible with standard 802.3bj Reed-Solomon FEC at 14 Gbps provided interface losses are maintained below 4.5 dB. With these interface losses and some improvements to the Transmitter (Tx) and Receiver (Rx) electronics, 25 Gbps multi-channel operation is expected to be compatible with 7% overhead hard decision FEC.

We have developed a theory of high-speed operation of quantum dot (QD) semiconductor optical amplifiers (SOAs), and showed that pattern-effect-free amplification of pulse trains, cross gain modulation (XGM) and cross phase modulation (XPM) can take place in QD SOA in the regime with maximum gain. Formulas, which relate the maximum bit-rate for the pattern-effect-free operation and the average SOA output power to the SOA pump current density, were derived. XGM without pattern effect can be realized in the regime with maximum gain due to spectral hole burning effects. Possibility of ultrafast frequency conversion and demultiplexing of data pulse streams through this nonlinearity is illustrated. Expression for the nonlinear refractive index η nl due to spectral hole burning in QD structure was obtained. The value of η nl in QD SOAs can be by 4-5 orders larger than η nl in silica; and efficient ultrafast XPM without pattern effects can be carried out in QD SOA through this nonlinearity. In whole, usage of the regime with maximum gain in QD SOAs can lead to development of new generation of high-speed devices for ultrafast optical processing and communications.

Analysis of the broadband gain of a GaInNAs single quantum well (QW) semiconductor optical amplifier (SOA) is developed considering the tuneability of the gain in detail. The SOA is analyzed as a single device multiwavelength channel amplifier in a wavelength-division-multiplexing (WDM) network. The gain model includes the QW material gain derived using a band anti-crossing model and includes quantum dot (QD) fluctuations in the conduction band arising from compositional fluctuations of N within the QW. The material gain is broadened by adding the gain of the QD-like fluctuations and the QW confined level. Simultaneous amplification of two optical signals is analyzed, one at the peak of the QW gain and one at the peak of the QD distribution gain, and the linear and nonlinear regions are established. In addition, multi-channel signal amplification, appropriate for WDM applications, has been modeled across the frequency range of the QW and the QD-like fluctuations and no wavelength degradation between the channels was observed demonstrating the potential of dilute nitride QW as multiwavelength SOAs at optical communications wavelengths.