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- https://doi.org/10.1109/apccas.2018.8605603
Stability and Variability Emphasized STT-MRAM Sensing Circuit With Performance Enhancement
- Oct 1, 2018
- Menglin Han +5 more
Abstract
International audience
- # Spin Transfer Torque Magnetic Random Access Memory
- # Torque Magnetic Random Access Memory
- # Low Voltage
- # High Speed
- # Transistor Sizing
- # Next-generation Nonvolatile Memory
- # Perpendicular Anisotropy Magnetic Tunnel Junctions
- # Magnetic Tunnel Junctions
- # Perpendicular Magnetic Anisotropy
- # Supply Voltage