- Research Article
14
- 10.1063/1.1735533
Uniform Avalanche Effect in Silicon Three-Layer Diodes
- Dec 01, 1960
- Journal of Applied Physics
- A Goetzberger
Interaction of current gain and avalanche multiplication in three-layer diodes is utilized to produce uniform avalanche effect, indicated by uniform light emission over the area of a junction. Proof that the effect is caused by the three-layer action is furnished by removing the emitter layer, which changes the light emission to the usually observed microplasma pattern.
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