The Effect of Hard Radiation on the Electronic, Optical, and Recombination Properties of the (Al, Ga, In)-P and (Al, Ga)-As Compounds and their Solid Solutions
The data of the experimental and theoretical investigations into the electronic, optical, and recombination properties of AlP, InP, GaP, AlAs, GaAs, and their solid solutions exposed to hard radiation are discussed. The influence of hard radiation on the properties of laser and light-emitting diode (LED) structures based on these materials is analyzed. Light emitting diodes (LEDs) based on AlP, InP, GaP, AlAs, GaAs, and their solid solutions find wide use in alarm, display, and other systems operating in the visible region of the spectrum. Currently, to create an active region in these structures, the producers mainly use multiple quantum wells based on solid solutions of these semiconductors grown on the lattice matched substrates using epitaxy of organometallic compounds from the gas phase (MOCVPE, MOCVD). These LEDs are used in the board installation in the near space region and in nuclear power industry. In these cases, the radiation defects (RD) are formed in the semiconductor lattice, which leads to the changes in the electronic, optical, and recombination properties of the material. All this affects the parameters of LEDs and, first and foremost, their radiative efficiency, thereby reducing their operation time under the action of hard radiation. Maintaining working capacity of LEDs in hard radiation fields is a complex task that requires understanding the physics of the process of radiation degradation of both the semiconductor material and the structure as a whole. An analysis of the scientific, technical, and patent literature shows that the studies of radiation degradation of LEDs, at best, reduce to an analysis of the corresponding empirical relationships. In this paper, we analyze the effect of hard radiation on the electronic, optical, and recombination properties of AlP, InP, GaP, GaAs, and AlAs semiconductors and their solid solutions used for producing visible-range LEDs.
Read more