Study of the Anti-Spacer Double Patterning Method

E D Tikhonova; E S Gornev

doi:10.1134/s1063739725600190

Home
Search
Study of the Anti-Spacer Double Patterning Method

https://doi.org/10.1134/s1063739725600190

Study of the Anti-Spacer Double Patterning Method

Feb 1, 2025
Russian Microelectronics
E D Tikhonova +1 more

Listen

Abstract
Literature Map
References
Similar Papers

Abstract

In this paper, we demonstrate the double pattening (DP) technique with an anti-spacer, which allows the formation of critical layer structures with sub-193i-lithographic dimensions that go beyond the limits of single extreme ultraviolet lithography (EUV). The set of key parameters affecting the performance of the process is studied and a method for optimizing the lithographic process is presented.