Study on Performance Optimization of Perovskite Solar Cells Based on MAPbI3

Device optimization of CsPbI2Br-based inorganic perovskite solar cells using different charge transport layers via SCAPS-1D

Carrier Dynamics Engineering for High-Performance Electron-Transport-Layer-free Perovskite Photovoltaics

Influence of Charge Transport Layers on Capacitance Measured in Halide Perovskite Solar Cells

The present work investigates a tin-based highly efficient perovskite solar cell (PSC) by a solar cell capacitance simulator in one dimension. Molybdenum disulfide is introduced as hole transport layer in the proposed solar cell device structure. The photovoltaic performances of the proposed solar cell are investigated by varying thickness, doping concentration, and bulk defect density of various layers. Furthermore, the operating temperature and the series and shunt resistances are analyzed systematically. A higher conversion efficiency of 25.99% is obtained at the absorber thickness of 2000 nm. The optimum doping density of 1017 cm−3 is estimated for the absorber, electron transport layer (ETL), and hole transport layer (HTL), respectively. The optimum thicknesses of 50 nm, 1000 nm, and 60 nm are also found for the titanium dioxide as ETL, methylammonium tin triiodide (CH3NH3SnI3) as absorber layer, and molybdenum disulfide as HTL, respectively. The efficiency of the proposed lead-free CH3NH3SnI3-based solar cell with the alternative molybdenum disulfide HTL is calculated to be 24.65% with open-circuit voltage of 0.89 V, short-circuit current density of 34.04 mA/cm2, and fill-factor of 81.46% for the optimum parameters of all layers. These findings would contribute to fabricate low-cost, non-toxic, stable, and durable lead-free PSCs for the next generation.

Perovskite solar cell’s efficiency, stability and scalability: A review

This work studies the performance of composite solar cell model consisting of perovskite absorber layer (CH3NH3PbI3), electron transport layer (TiO2 or PCBM), and hole transport layer (Spiro-OMeTAD or CuI) via sinc and discrete singular convolution quadrature techniques. The governing equations for hole transport layer, electron transport layer, and absorber layer (perovskite) are derived depending on the equations of continuity and Poisson. Different quadrature and block-marching techniques convert these equations to the nonlinear algebraic system. Then, we apply the iterative method to solve the problem of nonlinearity. For each scheme, a programmed code is designed to get a numerical solution for composite perovskite solar cells by MATLAB. To ensure the efficiency and convergence of these schemes, the obtained results match with previous experiments and other numerical schemes. From these comparisons, the discrete singular convolution quadrature technique gives high accuracy, speed of convergence, and more reliability than other methods with error up to 10−8. Consequently, the effects of different thicknesses, mobilities, band gaps, temperatures, absorption factors, wavelengths, and doping concentrations on current density, open-circuit voltage, and efficiency of solar cells are investigated in a full parametric study. Hence, the obtained effects of the current schemes increase the efficiency of perovskite solar cells. Novelty Statement Sinc and discrete singular convolution quadrature techniques are applied to reach high performance for perovskite absorber layer sandwiched between electron transport layer (ETL) and hole transport layer (HTL). The study demonstrates that the discrete singular convolution quadrature method gives high efficiency and accurate results at different parameters. It is obtained that the power conversion efficiency is approximately 35% at specific parameters.

Theoretical study of methyl-ammonium bismuth halide perovskite solar cells, (CH3NH3)3Bi2I9, was carried out using a one-dimensional Solar Cell Capacitance Simulator (SCAPS-1D) software. The performance of the tested device architectures largely depends on the thickness of the absorbing layer, with the combination of electron transport, and hole transport layers. Thus, the bismuth perovskite absorber layer was optimized by varying the thickness and also, the thicknesses of the different charge-transport materials such as Spiro-OmeTAD, copper (I) oxide (Cu2O), and copper (I) iodide (CuI) as hole transport layer (HTL), and phenyl-C61-butyric acid methyl ester (PCBM), poly(3-hexylthiophene-2,5-diyl) (P3HT), zinc oxide, and titanium dioxide as electron transport layer (ETL). The best performance in terms of the power conversion efficiency (PCE) was recorded for the device with Cu2O as the HTL and ZnO as the ETL with the absorber layer thickness of 200 nm. The working temperature of the device was varied from 295 to 320 K and the effects of temperature on various device architectures were investigated. Results obtained indication that the efficiency of the bismuth perovskite solar cells can be improved by optimizing the thickness of the absorber layer and utilizing an appropriate combination of HTLs and ETLs. Keywords: methyl-ammonium bismuth perovskite, SCAPS, HTL, ETL, PCE.

Formamidinium tin iodide (FASnI3)-based perovskite solar cells (PSCs) have achieved significant progress in the past several years. However, these devices still suffer from low power conversion efficiency () and poor stability. Recently, Cesium (Cs)-doped Formamidinium tin iodide ( showed enhanced air, thermal, and illumination stability of PSCs. Hence, in this work, PSCs have been rigorously studied and compared to pure FASnI3 PSCs using a solar cell capacitance simulator (SCAPS) for the first time. The aim was to replace the conventional electron transport layer (ETL) TiO2 that reduces PSC stability under solar irradiation. Therefore, PSCs with different Cs contents were analyzed with TiO2 and stable ZnOS as the ETLs. Perovskite light absorber parameters including Cs content, defect density, doping concentration and thickness, and the defect density at the interface were tuned to optimize the photovoltaic performance of the PSCs. The simulation results showed that the device efficiency was strongly governed by the ETL material, Cs content in the perovskite and its defect density. All the simulated devices with ZnOS ETL exhibited exceeding when the defect density of the absorber layer was below , and deteriorated drastically at higher values. The optimized structure with as light absorber and ZnOS as ETL showed the highest of with an open circuit voltage of , short-circuit current density of , and fill factor FF of . Our results obtained from the first numerical simulation on Cs-doped FASnI3 could greatly increase its potential for practical production.

Dual interfacial engineering to improve ultraviolet and near-infrared light harvesting for efficient and stable perovskite solar cells

The power conversion efficiency (PCE) and stability of perovskite solar cells (PSCs) are significantly reduced by defect-induced charge non-radiative recombination. Also, unexpected residual strain in perovskite films leads to an unfavorable impact on the stability and efficiency of PSCs, notably flexible PSCs (f-PSCs). Considering these problems, a thorough and effective strategy is proposed by incorporating phytic acid (PA) into SnO2 as an electron transport layer (ETL). With the addition of PA, the Sn inherent dangling bonds are passivated effectively and thus enhance the conductivity and electron mobility of SnO2 ETL. Meanwhile, the crystallization quality of perovskite is increased largely. Therefore, the interface/bulk defects are reduced. Besides, the residual strain of perovskite film is significantly reduced and the energy level alignment at the SnO2/perovskite interface becomes more matched. As a result, the champion f-PSC obtains a PCE of 21.08% and rigid PSC obtains a PCE of 21.82%, obviously surpassing the PCE of 18.82% and 19.66% of the corresponding control devices. Notably, the optimized f-PSCs exhibit outstanding mechanical durability, after 5000 cycles of bending with a 5mm bending radius, the SnO2-PA-based device preserves 80% of the initial PCE, while the SnO2-based device only remains 49% of the initial value.

Recently, all-inorganic double perovskite, lead-free absorber-based perovskite solar cells (PSCs) have been an active area of research. Due to its narrow bandgap and wide and high absorption, Cs2PtI6-based PSCs have generated wide interest. In this work, a comprehensive study of a Cs2PtI6-based PSC using solar cell capacitance simulator (SCAPS) one-dimensional is conducted. The simulation result is validated by comparing it with experimentally reported Cs2PtI6-based PSCs. To design a highly efficient, commercially feasible PSC, the variation in the performance of the PSC with six different electron transport layers (ETLs), ten-hole transport layers (HTLs), and nine metal contacts is investigated by simulation. Among the tried configurations, FTO / ZnO / Cs2PtI6 / MoO3 / Cu yielded the highest power conversion efficiency (PCE). The effect of varying the parameters of thickness, defect density, and doping concentration of the absorber layer; thickness, and doping concentration of the transport layers; and defect density of the interface layers on the performance of the device is investigated. The optimized device configuration yields an open-circuit voltage (Voc) of 1.3856 V, short-circuit current density (Jsc) of 16.107 mA / cm2, fill factor (FF) of 75.54%, and PCE of 16.85%. When the simulation is done with different back metal contacts, carbon yielded encouraging results with a Voc of 1.4105 V, Jsc of 16.112 mA / cm2, FF of 90.01%, and PCE of 20.45%.

Abstract: Over the past few years, significant advances in science and technology have occurred in the field of perovskite-based solar cells (PSC), which has sparked significant interest in next-generation photovoltaic technologies. Perovskite solar cells, which have a current certified power conversion efficiency of 25.5 %, are the first solution processed photovoltaic to outperform silicon-based photovoltaic technologies. Perovskite solar cells are comparable to Silicon-based solar cells due to their low-cost fabrication techniques and high efficiency. Nevertheless, the research community is still concerning about future design optimization, series degradation issues, stability, and practical efficiency restrictions. As a result, comprehensive knowledge of the perovskite solar cell's operating mechanism and operating principles is more important than ever before applying these technologies in the real world for future optimization. Recent research findings in the material science of innovative halide perovskites, as well as numerous architectures based on alternative materials for lead-free perovskites, band-gap engineering, impact of materials on various electron transport layers (ETL) and hole transport layers (HTL), the device instability and J-V hysteresis issues of perovskite solar cells are the focus of this study. In order to better understand the potential of perovskite solar cell, factors such as hysteresis-inducing factors, interface engineering, device stability, and a variety of recombination processes are being investigated. For future optimization of perovskite solar cells, the following review findings provide a clear focus for current research needs and future research directions to address issues and understand the working potential of the perovskite solar cell.

Perovskite solar cells (PSC) have drawn interest in recent years due to their progressively improving power conversion efficiency (PCE), lightweight and wearable properties, straightforward solution fabrication process, suitability for flight, potential for deployment in ultra-lightweight space applications, and low-cost material constituents, among other factors. The efficiency of perovskite solar cells has exceeded 25% by developing novel low-cost synthesis methods and advancements in interface and electrode materials, enhancing the production of high-quality perovskite films. Moreover, perovskite solar cells’ stability has been the focus of several studies. This review primarily examines recent advances in perovskite solar cells concerning their properties, composition, and synthesis methods. The main focus is to study transition metal oxide (TMO)-based nanocomposites for various PSC layers, including electron transport layers (ETLs), hole transport layers (HTLs), and other layers. These TMO-based nanocomposites were employed in perovskite solar cells, considering their band gap, carrier mobility, transmittance, and other relevant factors. The prospects of different TMO (iron, titanium, copper, nickel, etc) -based perovskite solar cells and their potential for commercialization feasibility have also been examined.

The development of hybrid organo-lead trihalide perovskite solar cells (PSCs) comprising an electron transporting layer (ETL), a perovskite light absorber and a hole transporting layer (HTL) has received significant attention for their potential in efficient PSCs. However, the preparation of a compact and uniform ETL and the formation of a uniform light absorber layer suffer from a high temperature processing treatment and the formation of unwanted perovskite islands, respectively. A low temperature/room temperature processed ETL is one of the best options for the fabrication of flexible PSCs. In the present work, we report the implementation of a room temperature processed compact TiO2 ETL and the synthesis of extremely uniform flexible planar PSCs based on methylammonium lead mixed halides MAPb(I1-xBrx)3 (x = 0.1) via RF-magnetron sputtering and a toluene dripping treatment, respectively. The compact TiO2 ETLs with different thicknesses (30 to 100 nm) were directly deposited on a flexible PET coated ITO substrate by varying the RF-sputtering time and used for the fabrication of flexible PSCs. The photovoltaic properties revealed that flexible PSC performance is strongly dependent on the TiO2 ETL thickness. The open circuit voltage (VOC) and fill factor (FF) are directly proportional to the TiO2 ETL thickness while the 50 nm thick TiO2 ETL shows the highest current density (JSC) of 20.77 mA cm-2. Our controlled results reveal that the room temperature RF-magnetron sputtered 50 nm-thick TiO2 ETL photoelectrode exhibits a power conversion efficiency (PCE) in excess of 15%. The use of room temperature synthesis of the compact TiO2 ETL by RF magnetron sputtering results in an enhancement of the device performance for cells prepared on flexible substrates. The champion flexible planar PSC based on this architecture exhibited a promising power conversion efficiency as high as 15.88%, featuring a high FF of 0.69 and VOC of 1.108 V with a negligible hysteresis under AM 1.5 G illumination. Furthermore, the mechanical bending stability revealed that the fabricated devices show stable PCE up to 200 bending cycles. The interface properties revealed that the 50 nm thick TiO2 ETL provides superior charge injection characteristics and low internal resistance. The present work provides a simplistic and reliable approach for the fabrication of highly efficient stable flexible perovskite solar cells.

The numerical analysis was performed on lead-based perovskite solar cells (PSCs) to enhance the cell’s performance, minimize toxicity, and improve cell stability. The solar cell capacitance simulator (SCAPS-1D) was used to investigate the effect of the thickness, bandgap, temperature, and interface defect density of the PSC. The SCAPS-1D consists of several layers; during the simulation, the Cu2O was used as the hole transport layer (HTL), the TiO2 was utilized as the electron transport layer (ETL), and the methylammonium lead triiodide (MAPbI3) was used as the absorber layer. A fluorine-doped tin oxide (FTO) was deployed to perform the function of a front contact and transparent conductive oxide. The platinium serves as the back metal contact and a means to minimize toxicity in the lead. The variation in the thickness of the absorber layer recorded the highest PCE of 28.46% as the thickness increases to 1.0 but decrease at further increases in thickness. The device performance at lower interface defect density was higher and decreased as the defect density increased. The behaviour of the bandgap was also examined in the (ETL) and the results show a decrease in the PCE with increasing bandgap but on the contrary that of (HTL) increase in the PCE with increase in the bandgap. The PCE in the absorber layer also increases as the bandgap increases. The device's best operation temperature was between 280k and 340k.