Superconducting nanowire materials for mid infrared single photon detection (Conference Presentation)

Superconducting nanowire single photon detector (SNSPD) has been widely used in many fields such as quantum computing, quantum key distribution and laser radar, due to its high detection efficiency, low dark count rate, high counting rate, and low timing jitter. In most cases, the SNSPD works under the DC-bias mode that can detect single photons arrived at any time. In some cases such as satellite laser ranging and single-photon laser radar where the light pulses arrive regularly, the AC-bias mode enables the SNSPD to work with higher counting rates and lower background dark counts, which however requires complicated readout due to the low signal-to-noise ratio of the photon response. In this work, we report on an AC-biased SNSPD system with a self-differential readout circuit. The system includes a 2-pixel SNSPD consisting of two parallel nanowires, which are biased with 100 MHz sinusoidal current. The output signals of these two nanowires are amplified and combined for the differential readout of the photon response. The resulting response pulse possesses a signal-to-noise ratio ten times higher than that extracted before self-differential readout. In addition, the dark counts are reduced by a factor of 4, and the count rates are increased by a factor of 1.5, in comparison with those under the DC-bias mode. This work provides a specific method to read out the AC-biased SNSPD.

Superconducting nanowire single photon detectors (SNSPDs) promise to combine near-unity quantum efficiency with >100 megacounts per second rates, picosecond timing jitter, and sensitivity ranging from x-ray to mid-infrared wavelengths. However, this promise is not yet fulfilled, as superior performance in all metrics is yet to be combined into one device. The highest single-pixel detection efficiency and the widest bias windows for saturated quantum efficiency have been achieved in SNSPDs based on amorphous materials, while the lowest timing jitter and highest counting rates were demonstrated in devices made from polycrystalline materials. Broadly speaking, the amorphous superconductors that have been used to make SNSPDs have higher resistivities and lower critical temperature (Tc) values than typical polycrystalline materials. Here, we demonstrate a method of preparing niobium nitride (NbN) that has lower-than-typical superconducting transition temperature and higher-than-typical resistivity. As we will show, NbN deposited onto unheated SiO2 has a low Tc and high resistivity but is too rough for fabricating unconstricted nanowires, and Tc is too low to yield SNSPDs that can operate well at liquid helium temperatures. By adding a 50 W RF bias to the substrate holder during sputtering, the Tc of the unheated NbN films was increased by up to 73%, and the roughness was substantially reduced. After optimizing the deposition for nitrogen flow rates, we obtained 5 nm thick NbN films with a Tc of 7.8 K and a resistivity of 253 μΩ cm. We used this bias sputtered room temperature NbN to fabricate SNSPDs. Measurements were performed at 2.5 K using 1550 nm light. Photon count rates appeared to saturate at bias currents approaching the critical current, indicating that the device's quantum efficiency was approaching unity. We measured a single-ended timing jitter of 38 ps. The optical coupling to these devices was not optimized; however, integration with front-side optical structures to improve absorption should be straightforward. This material preparation was further used to fabricate nanocryotrons and a large-area imager device, reported elsewhere. The simplicity of the preparation and promising device performance should enable future high-performance devices.

Superconducting nanowire single photon detector (SNSPD) has been widely used in many fields such as quantum communication due to its extremely high detection efficiency, low dark count rate, high count rate, and low timing jitter. Compared with conventional single-photon detectors with planar structure, SNSPD is typically made a periodical meandering structure consisting of parallel straight nanowires. However, owing to its unique linear structure, the detection efficiency of SNSPD is dependent on the polarization state of incident light, thus limiting SNSPD’s applications in unconventional fiber links or other incoherent light detection. In this paper, a polarization-insensitive SNSPD with high detection efficiency is proposed based on the traditional meandering nanowire structure. A thin silicon film with a high refractive index is introduced as a cladding layer of nanowires to reduce the dielectric mismatch between the nanowire and its surroundings, thereby improving the optical absorption efficiency of nanowires to the transverse-magnetic (TM) polarized incident light. The cladding layer is designed as a sinusoidal-shaped grating structure to minimize the difference in optical absorption efficiency between the transverse electric (TE) polarized incident light and the TM polarized incident light in a wide wavelength range. In addition, the twin-layer nanowire structure and the dielectric mirror are used to improve the optical absorption efficiency of the device. Our simulation results show that with the optimal parameters, the optical absorption efficiency of nanowires to both of the TE polarized incident light and TM polarized incident light has a maximum of over 90% at 1550 nm, and the corresponding polarization extinction ratio is less than 1.22. The fabricated device possesses a maximum detection efficiency of 87% at 1605 nm and a polarization extinction ratio of 1.06. The measured detection efficiency exceeds 50% with a polarization extinction ratio less than 1.2 in a wavelength range from 1505 nm to 1630 nm. This work provides a reference for high-efficiency polarization-insensitive SNSPD in the future.

Single photon response of superconducting nanowire single photon detector

The superconducting nanowire single‐photon detector (SNSPD) is a quantum‐limit superconducting optical detector based on the Cooper‐pair breaking effect by a single photon, which exhibits a higher detection efficiency, lower dark count rate, higher counting rate, and lower timing jitter when compared with those exhibited by its counterparts. SNSPDs have been extensively applied in quantum information processing, including quantum key distribution and optical quantum computation. In this review, we present the requirements of single‐photon detectors from quantum information, as well as the principle, key metrics, latest performance issues, and other issues associated with SNSPD. The representative applications of SNSPDs with respect to quantum information will also be covered.

Cathodic arc deposition of nanocrystalline titanium nitride thin film on fluorine doped tin oxide coated glass substrate: Crystal structural, microstructural, mechanical, optical and electrical properties

We report on initial fabrication efforts in the integration of superconducting nanowire single-photon detectors (SNSPDs) with vertically aligned carbon nanotubes (VACNTs) with the goal of creating a wideband single-photon detector. SNSPDs provide high detection efficiencies and low dark count rates, while the VACNTs are excellent broadband optical absorbers. Combining these technologies could potentially enable the development of highly sensitive and versatile optical sensors for a variety of applications, such as spectroscopy, optical communication, and imaging in light starved environments. We developed two fabrication processes for the integration of VACNTs on SNSPDs. The first involves capping the SNSPDs with a protective layer and growing the VACNTs directly above nanowires. Thermal and electrical characterizations of the devices demonstrated a degradation of the superconducting qualities of the SNSPDs. The second process involved suspending the SNSPDs on a thin membrane via a backside etch, where VACNTs were then grown on the backside of the membranes below the nanowires. The membrane style devices showed no degradation in the superconducting properties of the nanowires. Measurements of the membrane style devices before and after the VACNT growth display similar superconducting properties and photon count rates.

Nano-crystalline Titanium Nitride (TiN) thin films were deposited on glass substrates by reactive DC magnetron sputtering in the presence of a supported discharge (dc triode magnetron sputtering). A hot thermionic filament which was negatively biased is kept between the target and substrate, and was used to sustain the discharge at much lower pressures. The TiN films deposited at room temperature (RT) were annealed at different temperatures of 373, 473 and 573 K in a high vacuum for 1 h. The films were characterized for their morphological, structural, micro-structural, optical and electrical properties. RT deposited titanium to nitrogen ratio was found to be 1:1 which has been confirmed by EDAX. XRD studies showed that the as-deposited TiN thin film were amorphous in nature and transformed to a nano-crystalline structure with increasing annealing temperatures. The crystallite growth of TiN thin films started around 373 K onwards, and it became a face-centered cubic structure with a preferred orientation along the (111) plane. The band gap of TiN thin films was found to increase from 2.7 to 3.2 eV with an increase in the annealing temperature. The photoluminescence spectrum of TiN thin films indicates a broadening of emission wavelength in the visible region with a maximum emission peak around 360 nm. The electrical resistivity of TiN thin films was found to drop significantly from 1800 to 400 µΩ cm with an increase in the annealing temperature. The AFM micrographs of annealed TiN thin films show uniform surface pattern associated with a large accumulation of fine grains. Through this work, it has been demonstrated that it is possible to achieve the required physical properties of TiN films at lower annealing temperatures by the supported discharge dc magnetron technique compared to other sputtering techniques.

<sec>Facing the demand for applications such as wide-area terrain mapping and space-based atmospheric measurements, there is an urgent need to develop miniaturized single-photon detection systems with low power consumption that can be adapted to airborne platforms. Superconducting nanowire single-photon detectors (SNSPDs) have been applied to quantum information, bioimaging, deep space communication and long-range lidar with the advantages of high quantum efficiency, low dark count rate and fast detection rate. However, traditional SNSPD usually operates at 2.1 K or even lower, and the required cryogenic systems are large in size and weight, which are not easy to apply to airborne platforms. Up to now, there has been no report on SNSPD applied to airborne platforms. How to apply SNSPD to airborne platforms is an urgent problem to be solved.</sec><sec>In this work, we design and make an SNSPD with an operating temperature of 4.2 K. The superconducting detector chip is a four-channel photon-number-resolving device with a photosensitive area of 60 μm × 60 μm, which is coupled to a 200-μm-diameter fiber by a beam compression system with a quantum efficiency of 50% at 1064 nm and a temperature of 4.2 K. Finally, the time characteristics of a single channel are tested in response to different photon numbers. The timing jitter of four-photon response is smallest, and the half-height width is 110 ps. This work not only supports airborne applications, but also has positive implications for promoting the development of general-purpose miniaturized SNSPD systems and their applications.</sec>

Superconducting nanowire single photon detector (SNSPD) plays a significant role in plenty of fields such as quantum information, deep space laser communication and lidar, while the mechanism of the photon response process still lacks a recognized theory. It is prerequisite and essential for fabricating high-performance SNSPD to understand in depth and clarify the photon response mechanism of the SNSPD. As mature theories on the SNSPD response progress, hot-spot model and vortex-based model both have their disadvantages: in the former there exists the cut-off wavelength and in the later there is the size effect, so they both need further improving. The Cut-off wavelength means that the detection efficiency of the SNSPD drops to zero with the increase of light wavelength, which is indicated by the hot-spot model but not yet observed in experiment. The size effect implies that the vortex does not exist in the weak link with the width less than 4.41<i>ξ</i>, where <i>ξ</i> is the GL coherence length. Phase slip is responsible for the intrinsic dissipation of superconductors, which promises to expound the SNSPD photon response progress and to establish a complete theory. This paper reviews and discusses the fundamental conception, the development history and the research progress of the hot-spot models, i.e. the vortex-based model and the superconductor phase slips, providing a reference for studying the SNSPD photon response mechanism.

A superconducting nanowire single photon detector system designed for $2.3\mu \mathrm{m}$ wavelength deployed into a single photon light detection and ranging setup. This wavelength takes advantage of lower solar flux and less atmospheric absorption. © 2019 The Author(s)

Epitaxial titanium nitride (TiN) and titanium oxynitride (TiON) thin films have been grown on sapphire substrates using a pulsed laser deposition (PLD) method in high-vacuum conditions (base pressure <3 × 10-6 T). This vacuum contains enough residual oxygen to allow a time-independent gas phase oxidation of the ablated species as well as a time-dependent regulated surface oxidation of TiN to TiON films. The time-dependent surface oxidation is controlled by means of film deposition time that, in turn, is controlled by changing the number of laser pulses impinging on the polycrystalline TiN target at a constant repetition rate. By changing the number of laser pulses from 150 to 5000, unoxidized (or negligibly oxidized) and oxidized TiN films have been obtained with the thickness in the range of four unit cells to 70 unit cells of TiN/TiON. X-ray photoelectron spectroscopy (XPS) investigations reveal higher oxygen content in TiON films prepared with a larger number of laser pulses. The oxidation of TiN films is achieved by precisely controlling the time of deposition, which affects the surface diffusion of oxygen to the TiN film lattice. The lattice constants of the TiON films obtained by x-ray diffraction (XRD) increase with the oxygen content in the film, as predicted by molecular dynamics (MD) simulations. The lattice constant increase is explained based on a larger electrostatic repulsive force due to unbalanced local charges in the vicinity of Ti vacancies and substitutional O. The bandgap of TiN and TiON films, measured using UV-visible spectroscopy, has an asymmetric V-shaped variation as a function of the number of pulses. The bandgap variation following the lower number of laser pulses (150-750) of the V-shaped curve is explained using the quantum confinement effect, while the bandgap variation following the higher number of laser pulses (1000-5000) is associated with the modification in the band structure due to hybridization of O2p and N2p energy levels.

This study investigates ultrathin titanium nitride (TiN) films in terms of their crystallographic structure, surface chemistry, sheet resistance and mechanical durability. These TiN ultrathin films were created by Atomic Layer Deposition (ALD) using TiCl4 and NH3 as precursors. The process consisted of 100, 200, 300 and 400 deposition cycles yielding ultrathin films 4.7, 9.4, 14.1 and 18.8 nm in thickness, respectively. Different planar substrates were employed, namely Si wafers, soda lime glasses and Ti foil. Based on image analyses, the deposition rate of 0.047 nm per cycle for ALD TiN (at 400 °C) was determined. A sheet resistance of 287 Ω/□ was achieved for the 18.8 nm film. X-ray diffraction (XRD) analysis confirmed the formation of cubic TiN with increasing crystallinity and texture with increased thickness. Sputter depth profiling in tandem with X-ray photoelectron spectroscopy (XPS) distinguished the uppermost oxidized surface from the stoichiometric TiN core in the films. Scratch tests demonstrated an enhanced adhesion and scratch resistance with ALD TiN films, aligned with the observed microstructural improvements. The comprehensive correlation between the film thickness, and their chemical composition, crystalline structure and mechanical performance highlights the vital role of ALD parameters in preparing TiN thin films for advanced technological applications.

Superconducting niobium nitride (NbN) continues to be investigated decades on, largely in part to its advantageous superconducting properties and wide use in superconducting electronics. Particularly, NbN-based superconducting nanowire single-photon detectors (SNSPDs) have shown exceptional performance and NbN remains as the material of choice in developing future generation quantum devices. In this perspective, we describe the processing–structure–property relationships governing the superconducting properties of NbN films. We further discuss the complex interplay between the material properties, processing parameters, substrate materials, device architectures, and performance of SNSPDs. We also highlight the latest progress in optimizing SNSPD performance parameters.

A large-format mid-infrared single-photon imager with very low dark count rates would enable a broad range of applications in fields like astronomy and chemistry. Superconducting nanowire single-photon detectors (SNSPDs) are a mature photon-counting technology as demonstrated by their figures of merit such as high detection efficiencies and very low dark count rates. However, scaling SNSPDs to large array sizes for mid-infrared applications requires sophisticated readout architectures in addition to superconducting materials development. In this work, an SNSPD array design that combines a thermally coupled row-column multiplexing architecture with a thermally coupled time-of-flight transmission line was developed for mid-infrared applications. The design requires only six cables and can be scaled to larger array sizes. The demonstration of a 64-pixel array shows promising results for wavelengths between 3.4 μm and 10 μm, which will enable the use of this single-photon detector technology for a broad range of new applications.