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  • https://doi.org/10.3390/chips4040041Copy DOI Icon

Surface Ion Trap for Fast Microwave Gates

  • Oct 5, 2025
  • Chips
  • Ilya Gerasin +2 more
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Abstract

Microwave-driven quantum logic gates in trapped-ion systems offer a scalable and laser-free alternative to optical control, with the potential for robust integration into surface-electrode trap architectures. In this work, we present a systematic design guideline for planar ion traps optimized for fast two-qubit microwave gates using chip-integrated conductors. We investigate two electrode configurations, one employing a single microwave line for driving σ transitions, and another with two symmetric lines for π transitions. Through finite-element simulations, we analyze ion height, magnetic field gradients, heating effects, and gate durations under realistic cryogenic conditions. Our results show that both configurations can achieve two-qubit gate times in the order of 10 μs for Be+9 and Ca+40 ions.

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