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  • https://doi.org/10.35848/1347-4065/ae1e03Copy DOI Icon

Synthesis and characterizations of In/Cu doped ternary Ge clathrate films

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Abstract

Abstract Reduction of Na content in type II Ge clathrate thin films doped with 4 at% Cu was achieved through annealing under vacuum. X-ray diffraction (XRD) analysis combined with Rietveld refinement confirmed the preservation of the type II clathrate structure and a decrease in Na content from 20.0 to 14.0. Correspondingly, absorbance spectra revealed a reduction in free-carrier absorption. Additionally, In-doped type II Ge clathrate thin films were synthesized using In-Ge films with In atomic ratios of <1 at% and 3 at%. The formation of clathrate structures was verified by XRD patterns. Broadening of both XRD and Raman peaks suggests the incorporation of In atoms into the Ge clathrate framework.

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