Terahertz Plasmonics: Good Results and Great Expectations

In recent years, the field of Terahertz (THz) science and technology has entered a completely new phase of unprecedented expansion that is generating ever-growing levels of broadbased international attention. Indeed, the plethora of activities that have arisen recently in both the technology and scientific arenas associated with the THz frequency domain i.e., between 1 millimeter (300 GHz) and 100 micrometers (3 THz), suggest that the field might be attempting to undergo a dramatic transition that could lead to long-awaited payoffs in a number of application areas. The inherent advantages and potential payoffs of the THz regime for military & security as well as industry relevant applications have long stood as an important driver of interest in this science and technology area. This extremely expansive and spectrally unique portion of the EM spectrum had initial application in space-based communications, upper atmospheric sensing and potentially for short-range terrestrial communications and non-intrusive package screening. However, the very rapid growth in more recent years is arguably most closely linked to the potential payoffs of THz sensing and imaging for an array of military, security and industrial applications. These applications include the spectroscopic-based detection identification and characterization of chemical and biological agents and materials, remote and standoff early-warning for chemicalbiological warfare threats, and imaging of concealed weapons and explosives, just to name a few. In addition, THz-regime finds its application possibilities in industry and private-sector areas as food-industry process control, pharmaceutical industry, biological science, medical diagnostics and security screening. Systems for rapidly emerging applications at THz frequencies thus require reliable highpower sources. In the last few years, the development of suitable sources for this frequency regime is being extensively explored worldwide. There are broadly two technology roadmaps for THz semiconductor devices. Approaching from the lower frequency range in the THz regime, electronic devices such as, Gunn diode, Resonant Tunneling diode (RTD) and nanometer Field Effect Transistors (FET) based on plasma wave have been widely investigated for THz frequency generation. From higher portion of the THz frequency spectrum, the photonics-based device Quantum Cascade Laser (QCL) extends the emission 7

The oscillation frequencies of the electron density (called plasma waves) in short channel devices correspond to the terahertz (THz) frequency range, and excitation of plasma waves can be used for generating and detecting THz radiation. Plasma wave THz detectors already outperform more conventional THz detectors, but achieving the full potential of plasma wave electronics devices may require use of grating-gate devices and/or plasmonic crystals, which are 2D or 3D arrays of plasmonic FETs.

Terahertz (THz) wave science and technology have been found countless applications in biomedical imaging, security screening, and non-destructive testing as they approach maturity. However, due to the challenge of high ambient moisture absorption, the development of remote open-air broadband THz spectroscopy technology is lagging behind the compelling need that exists in homeland security, astronomy and environmental monitoring. Furthermore, the underlying physical mechanisms behind the interaction between the THz wave and laserinduced plasma which responds strongly to electromagnetic waves have not been fully understood. This review aims to explain the light-plasma interaction at THz frequencies within a semiclassical framework along with experimental study of the femtosecond-laserinduced nitrogen plasma fluorescence under the illumination of single-cycle THz pulses. The results indicate that THz-radiation-enhanced-emission-of-fluorescence (THz-REEF) is dominated by electron kinetics in the THz field and the electron-impact excitation of gas molecules/ions. The information of the time-dependent THz field can be recovered from the measured time-resolved THz-REEF from single-color laser induced plasma with the help of the bias as local oscillator. The calculations and experimental verification lead to complete understanding of the science behind these effects and push forward to extend their capabilities in related applications such as remote THz sensing, plasma diagnostics and ultrafast photoluminescence modulation. Systematic studies in selected gases including neon, argon, krypton, xenon, methane (CH4), ethane (C2H6), propane (C3H8), and n-butane (C4H10) gases were performed to obtain an improved understanding of the THz-REEF. The dependences of the enhanced fluorescence on the THz field, laser excitation intensity, gas pressure, and intrinsic atomic properties were experimentally characterized. Both narrow line emission and broad continuum emission of the gas plasma were enhanced by the THz field. Their fluorescence enhancement ratios and time-resolved enhanced fluorescence were largely dependent on the scattering cross section and ionization potential of atoms. For the first time, we demonstrated a novel ‘all-optical’ technique of broadband THz wave remote sensing by coherently manipulating the fluorescence emission from asymmetrically ionized gas plasma that interacted with THz waves. By studying the ultrafast electron dynamics under the single cycle THz radiation, we found that the fluorescence emission from laser-induced air plasma was highly dependent on the THz electric field and the symmetry of the electron drift velocity distribution created by two-color laser fields. The time-resolved THz-REEF can be tailored by switching the relative two-color phase and laser polarizations. Owing to the high atmospheric transparency and omni-directional emission pattern of fluorescence, this technique can be used to measure THz pulses at standoff distances with minimal water vapor absorption and unlimited directionality for optical signal collection. The coherent THz wave detection at a distance of 10 m had been demonstrated. The combination of this method and previously demonstrated remote THz generation would eventually make remote THz spectroscopy available. We also introduced a unique plasma diagnostic method utilizing the THz-wave-enhanced fluorescence emission from the excited atoms or molecules. The electron relaxation time and plasma density were deduced through applying the electron impact excitation/ionization and electron-ion recombination processes to the measured time-delay-dependent enhanced fluorescence. The electron collision dynamics of nitrogen plasma excited at different gas pressures and laser pulse energies were systematically investigated. This plasma diagnostic method offers picosecond temporal resolution and is capable of omnidirectional optical signal collection. The ultrafast quenching dynamics of laser-pulse-induced photoluminescence in semiconductors under the radiation of single-cycle THz pulses was studied. It was found that the quenching in both cadmium telluride (CdTe) and gallium arsenide (GaAs) was linearly proportional to the intensity of incident THz waves and reaches up to 17% and 4% respectively at the peak intensity of 13 MW/cm2. The THz-wave-induced heating of the carriers and lattice and the subsequent decreased efficiency of photocarrier generation and recombination were most likely to be responsible for the quenching. This is potentially useful for the applications of a non-invasive ultrafast light modulator for photoluminescence devices with picoseconds switching time in the fields of the light-emitting devices and optical communication.

The ever-growing number of interconnected devices and the emergence of high-bandwidth technologies such as holographic communications in mixed reality are driving an exponential growth in the demand for terabits-per-second (Tbps) data rates with sub-milliseconds latency. For this reason, the sixth-generation (6G) wireless communications are moving towards the terahertz (THz) frequency band because of its wider spectral bandwidth availability to enable higher channel capacity and data rates according to the Shannon-Hartley theorem. However, the efficiency of wireless THz signal transmission is reduced by the increased path loss and atmospheric attenuation due to water vapor absorption at THz frequencies, which significantly decreases the signal-to-noise ratio and the spectral efficiency of THz wireless communications. The realization of THz band communications is further impeded by the limited power output of existing compact THz sources due to the extremely low conversion efficiencies. Therefore, it is crucial to develop broadband THz integrated circuits with waveguiding and beamforming functionalities for supporting high data-rate on-chip communications and to provide sufficient gains to counteract the path loss and limited power of THz wireless transmissions. This thesis aims to improve the spectral efficiency of 6G wireless communications via the spatiotemporal shaping of THz waves using silicon photonics. Spatiotemporal light shaping is the basis of nearly all THz photonic devices, ranging from THz wavefront manipulation using metasurfaces to THz planar waveguiding using photonic crystal waveguides. Silicon photonics is a promising material platform for THz wave shaping due to the low-loss propagation of THz waves in high-resistivity silicon and the prospect of a monolithic integrated circuit due to the complementary metal-oxide semiconductor (CMOS) fabrication process compatibility. Silicon metasurfaces allow the wavefront modulation of incident THz radiation by exploiting the generalized Snell’s law of refraction and reflection to beamform highly directional THz waves in a dynamic multi-user communication environment for enhancing the spectral efficiency. Likewise, broadband silicon photonic crystal waveguides allow the in-plane and lossless transport of THz waves to support on-chip high data-rate THz communications that can also seamlessly integrate multiple THz photonic devices in a THz integrated circuit. In addition, silicon electron emitters and silicon gratings potentially allow the on-chip generation of highly intense and broadband THz radiation to counteract the significant THz attenuation. In this thesis, spatiotemporal wave shaping techniques using silicon photonics for enhancing the spectral efficiency of THz band communications is presented. First, a self-adaptive and deep reinforcement learning model for THz beamforming is proposed, which can beamform multiple highly directional THz radiation beam in real-time to serve a dynamically changing multi-user communication environment and improve the signal-to-noise ratio of THz wireless transmission while potentially reducing the communication latency. Second, a broadband THz topological silicon waveguide designed based on valley photonic crystals is proposed for the robust and lossless transport of broadband THz waves for the construction of THz integrated circuits with broadband channel capacity for enabling higher data-rate on-chip communication. Last, the versatility of free-electron radiation from silicon gratings is investigated for the generation of highly intense spatiotemporal wave packets with user-designed group velocities and tunable intensity profile, with the potential to realize integrated high-power THz sources. The deep learning beamforming model, the broadband topological waveguide designs, and the free-electron radiation intensity shaping techniques presented in this thesis extends beyond the THz regime and are scalable across the entire electromagnetic spectrum. The CMOS process compatibility of silicon metasurfaces, silicon planar waveguides, along with silicon electron emitters and silicon gratings offers the opportunity to realize a broadband THz photonic integrated circuit with waveguiding, wave generation and beamforming functionalities for enhancing the spectral efficiency of THz communications in 6G wireless networks.

The article presents a rectangular core photonic crystal fiber (RCPCF) structure to detect the major components of blood. We used Topas as bulk fiber material for its extraordinary properties in the terahertz (THz) frequency region and the investigation is accomplished from 0.8 THz to 1.8 THz. The RCPCF sensor provides enriched relative sensitivity (almost 94.38%, 93.72%, 92.94%, 92.14%, and 90.8% for red blood cells (RBCs), hemoglobin (HB), white blood cells (WBCs), plasma, and water respectively at 1.8 THz frequency) with negligible confinement loss (only 2.75 × 10−13 cm−1, 2.87 × 10−13 cm−1, 3.06 × 10−13 cm−1, 3.27 × 10−13 cm−1, and 3.48 × 10−13 cm−1 for RBCs, HB, WBCs, plasma, and water respectively at 1.8 THz frequency). Besides, the proposed sensor offers a large effective area (approximately 3.382 × 105 μm2, 3.436 × 105 μm2, 3.493 × 105 μm2, 3.551 × 105 μm2, and 3.613 × 105 μm2for RBCs, HB, WBCs, plasma, and water respectivelyat 1.8 THz frequency). Also, this RCPCF sensor structure can be fabricated by utilizing the current fabrication techniques.

The knowledge of the surface resistance Rs of superconducting thin film at microwave and terahertz (THz) regions is significant to design, make and assess superconducting microwave and THz electronic devices. In this paper we reported the Rs of MgB2 films at microwave and THz measured with sapphire resonator technique and the time-domain THz spectroscopy, respectively. Some interesting results are revealed in the following: (1) A clear correlation is found between Rs and normal-state resistivity right above Tc, ρ0, i.e., Rs decreases almost linearly with the decrease of ρ0. (2) A low residual Rs ,l ess than 50µ� at 18 GHz is achieved by different deposition techniques. In addition, between 10 and 14 K, MgB2 has the lowest Rs compared with two other superconductors Nb3Sn and the high-temperature superconductor YBa2Cu3O7−δ(YBCO). (3) From THz measurement it is found that the Rs of MgB2 up to around 1 THz is lower than that of copper and YBCO at the temperature below 25 K. (4) The frequency dependence of Rs follows ω n ,w hereω is angular frequency, and n is power index. However, n changes from 1.9 at microwave to 1.5 at THz. The above results clearly give the evidences that MgB2 thin film, compared with other superconductors, is of advantage to make superconducting circuits working in the microwave and THz regions.

Temperature dependent refractive index and dielectric modulation of paramagnetic magneto-optic PrF3 crystal with terahertz time-domain spectroscopy

Saturable absorbers (SA) operating at terahertz (THz) frequencies can open new frontiers in the development of passively mode-locked THz micro-sources. Here we report the fabrication of THz SAs by transfer coating and inkjet printing single and few-layer graphene films prepared by liquid phase exfoliation of graphite. Open-aperture z-scan measurements with a 3.5 THz quantum cascade laser show a transparency modulation ∼80%, almost one order of magnitude larger than that reported to date at THz frequencies. Fourier-transform infrared spectroscopy provides evidence of intraband-controlled absorption bleaching. These results pave the way to the integration of graphene-based SA with electrically pumped THz semiconductor micro-sources, with prospects for applications where excitation of specific transitions on short time scales is essential, such as time-of-flight tomography, coherent manipulation of quantum systems, time-resolved spectroscopy of gases, complex molecules and cold samples and ultra-high speed communications, providing unprecedented compactness and resolution.

We report a nonlinear terahertz (THz) detection device based on a metallic bull’s-eye plasmonic antenna. The antenna, fabricated with femtosecond laser direct writing and deposited on a nonlinear gallium phosphide (GaP) crystal, focuses incoming THz waveforms within the sub-wavelength bull’s eye region to locally enhance the THz field. Additionally, the plasmonic structure minimizes diffraction effects allowing a relatively long interaction length between the transmitted THz field and the co-propagating near-infrared gating pulse used in an electro-optic sampling configuration. We show an increased detection sensitivity over a large spectral range extending from 1.4 THz to 3.1 THz with a peak enhancement factor of 3.1 at 2.7 THz. We demonstrate that this plasmonic structure is especially effective in monitoring THz signals affected by beam wandering or varying spot sizes. Our concept can be adapted to any second-order nonlinear crystal to realize compact and sensitive THz detectors without the need for tight beam focusing or high-precision alignment. This work paves the way for future developments of compact and sensitive THz detectors, notably for applications in wireless communications.

This paper presents comparative study of a rectangular Microstrip patch antenna at Terahertz (THz) frequency ranging from 0.6 to 1 THz with and without superstrate. The results report ed here were obtained using Ansoft HFSS 11.0 which uses full wave finite element method for simulation. In this study the miniature antenna was simulated first and then we load it with a superstrate and varied the height of the superstrate to optimize the antenna performance. Here in this paper we have selected 4 antenna configurations to compare. First antenna is a simple rectangular patch, second antenna is having a superstrate of height 50 microns, Third antenna is with a superstrate of 75 micron height and the fourth antenna is with a superstrate of 100 micron. Best performance of antenna i.e., -10dB bandwidth of around 19% was achieved at central frequency of 0.5 THz and 75 micron superstrate height.

Scattering-type scanning near-field microscopy (s-SNOM) at terahertz (THz) frequencies could become a highly valuable tool for studying a variety of phenomena of both fundamental and applied interest, including mobile carrier excitations or phase transitions in 2D materials or exotic conductors. Applications, however, are strongly challenged by the limited signal to noise ratio. One major reason is that standard atomic force microscope (AFM) tips, which have made s-SNOM a highly practical and rapidly emerging tool, provide weak scattering efficiencies at THz frequencies. Here we report a combined experimental and theoretical study of commercial and custom-made AFM tips of different apex diameter and length, in order to understand signal formation in THz s-SNOM and to provide insights for tip optimization. Contrary to common beliefs, we find that AFM tips with large (micrometer-scale) apex diameter can enhance s-SNOM signals by more than one order of magnitude, while still offering a spatial resolution of about 100 nm at a wavelength of 119 micron. On the other hand, exploiting the increase of s-SNOM signals with tip length, we succeeded in sub-15 nm resolved THz imaging employing a tungsten tip with 6 nm apex radius. We explain our findings and provide novel insights into s-SNOM via rigorous numerical modeling of the near-field scattering process. Our findings will be of critical importance for pushing THz nanoscopy to its ultimate limits regarding sensitivity and spatial resolution.

The terahertz (THz) frequency range is key to studying collective excitations in many crystals and organic molecules. However, due to the large wavelength of THz radiation, the local probing of these excitations in smaller crystalline structures or few-molecule arrangements requires sophisticated methods to confine THz light down to the nanometer length scale, as well as to manipulate such a confined radiation. For this purpose, in recent years, taking advantage of hyperbolic phonon polaritons (HPhPs) in highly anisotropic van der Waals (vdW) materials has emerged as a promising approach, offering a multitude of manipulation options, such as control over the wavefront shape and propagation direction. Here, we demonstrate the THz application of twist-angle-induced HPhP manipulation, designing the propagation of confined THz radiation between 8.39 and 8.98 THz in the vdW material α-molybdenum trioxide (α-MoO3), hence extending twistoptics to this intriguing frequency range. Our images, recorded by near-field optical microscopy, show the frequency- and twist-angle-dependent changes between hyperbolic and elliptic polariton propagation, revealing a polaritonic transition at THz frequencies. As a result, we are able to allocate canalization (highly collimated propagation) of confined THz radiation by carefully adjusting these two parameters, i.e. frequency and twist angle. Specifically, we report polariton canalization in α-MoO3 at 8.67 THz for a twist angle of 50°. Our results demonstrate the precise control and manipulation of confined collective excitations at THz frequencies, particularly offering possibilities for nanophotonic applications.

Wireless data rates have doubled every eighteen months for the last three decades. Following this trend, Terabit-per-second links will become a reality within the next five years. In this context, Terahertz (THz) band (0.1-10 THz) communication is envisioned as a key technology of the next decade. Despite major progress towards developing THz sources, compact signal generators above 1 THz able to efficiently work at room temperature are still missing. Recently, the use of hybrid graphene/semiconductor high-electron-mobility transistors (HEMT) has been proposed as a way to generate Surface Plasmon Polariton (SPP) waves at THz frequencies. Compact size, room-temperature operation and tunability of the graphene layer, in addition to possibility for large scale integration, motivate the exploration of this approach. In this paper, a simulation model of hybrid graphene/semiconductor HEMT-based THz sources is developed. More specifically, first, the necessary conditions for the so-called Dyakonov-Shur instability to arise within the HEMT channel are derived, and the impact of imperfect boundary conditions is analyzed. Second, the required conditions for coupling between a confined plasma wave in the HEMT channel and a SPP wave in graphene are derived, by starting from the coupling analysis between two 2DEG. Multi-physics simulation are conducted by integrating the hydrodynamic equations for the description of the HEMT device with Maxwell’s equations for SPP modeling. Extensive results are provided to analyze the impact of different design elements on the THz signal source. This work will guide the experimental fabrication and characterization of the devices.

We present experimental results of an investigation into the performance of a commercial, packaged GaAs high-electron-mobility transistor (HEMT) as a detector of terahertz (THz) radiation in the frequency ranges 0.22–0.32 and 0.520–0.650 THz. Enclosed in a standard ceramic housing and without a dedicated antenna for radiation coupling, the transistor is capable of sensitive direct detection (power detection) of THz radiation at room temperature. The device responsivity shows a strong variation with wavelength, indicating that various device features (transistor metallization, contact pads, wires) act as an effective THz antenna. With the THz radiation focused with a parabolic mirror (and without a substrate lens), the maximum responsivity reaches 2.5 and 0.72 V/W with values of the minimum optical noise-equivalent power (NEP) of 1.4 and 2.5 nW/ $\sqrt{\mathrm{Hz}}$ at the sensitivity peaks at 0.271 and 0.632 THz, respectively. The performance of the HEMT, in comparison with antenna-coupled FET detectors optimized for THz detection (TeraFETs), can be assessed better if the responsivity and the NEP are referred to the effective antenna cross-section determined experimentally for the device. We arrive at a cross-sectional responsivity of 42 V/W (1.6 V/W) and a cross-sectional NEP of 135 pW/ $\sqrt{\mathrm{Hz}}$ (1250 pW/ $\sqrt{\mathrm{Hz}}$ ) at 0.271 THz (0.632 THz), for measurements through the ceramic cap. The cross-sectional NEP values are about one order of magnitude at 0.271 THz and two orders of magnitude at 0.632 THz higher than those achieved with the best TeraFETs, yet in a range where they enable many practical applications at low cost for the detector.

Terahertz (THz) spectroscopy offers unique insights into the electronic and vibrational degrees of freedom of materials. Because of the long wavelength of THz portion of the electromagnetic spectrum, it can be challenging to generate and detect THz radiation on nanometer scales. In this talk I will describe our efforts to develop a platform for generation and detection of broadband terahertz (~10 THz bandwidth) emission using 10-nm-scale LaAlO3/SrTiO3 nanostructures created by conductive atomic force microscope (c-AFM) lithography. The technique relies on the large inherent third-order optical susceptibility of SrTiO3. Inversion symmetry is locally broken at this interface at nanoscale junctions, enabling local optical rectification of light from ultrashort near-infrared optical pulses that is electrically detected by the same junction1. This system is capable of generating and detecting broadband THz emission on a scale set by the junction, which can be as small as 10 nanometers2. I will describe how these devices are created and used to probe nanoscale objects (e.g., Au nanorods3) that can be placed and co-located with these sensitive sources and detectors of THz emission. Our current focus involves graphene nanostructures that are integrated with the LaAlO3/SrTiO3 system, but a host of other materials can in principle be integrated with this platform. 1. Irvin, P.; Ma, Y. J.; Bogorin, D. F.; Cen, C.; Bark, C. W.; Folkman, C. M.; Eom, C. B.; Levy, J., Rewritable nanoscale oxide photodetector. Nat Photonics 2010, 4 (12), 849-852. 2. Ma, Y.; Huang, M.; Ryu, S.; Bark, C. W.; Eom, C.-B.; Irvin, P.; Levy, J., Broadband Terahertz generation and detection at 10 nm scale. Nano Lett 2013, 13 (6), 2884-2888. 3. Jnawali, G.; Chen, L.; Huang, M.; Lee, H.; Ryu, S.; Podkaminer, J. P.; Eom, C.-B.; Irvin, P.; Levy, J., Photoconductive response of a single Au nanorod coupled to LaAlO$_3$/SrTiO$_3$ nanowires. Applied Physics Letters 2015, 106 (21), 211101.