The study of AgInS2 solar cell using simulation software wxAMPS

Performance evaluation of lead free CH3NH3SnI3/GeTe Tandem solar cell with HTL layer by SCAPS 1D

This study deals with the effect of absorber layer thickness on the performance of solar cells of type (Cu 2 ZnSnS 4 ) using the SCAPS‐1D simulation program. The solar cell properties were analyzed by varying the absorber layer thickness from 1 to 7 microns, and recording the effect on the open circuit voltage (Voc), output current (Jsc), fill factor (FF), and efficiency (η%) The results showed that increasing the thickness of the absorber layer led to an increase in both Voc and Jsc, with Voc increasing from 0.599872 to 0.658324 V, and Jsc increasing from 14.19 to 16.55 mA/cm 2 . This improvement reflects the cells ability to absorb more light and generate electrical charges. However, a slight decrease in the fill factor was observed, decreasing from 29.40% to 28.06%, indicating the effect of internal resistance and increased losses in thicker layers. Efficiency also saw a significant improvement, rising from 2.50% to 3.06%. These results reflect the importance of absorber layer thickness as a critical factor in improving cell performance of Cu 2 ZnSnS 4 solar cells. The study indicates the need to achieve a balance between layer thickness and performance efficiency to achieve more efficient and sustainable solar cells.

The efficiency of solar cells is strongly influenced by factors such as durability, cost-effectiveness, environmental compatibility, and overall performance. Recent advancements in kesterite-based CZTSSe solar cells have revealed a persistent challenge of low open-circuit voltage (VOC), which significantly limits device efficiency. This work focuses on optimizing absorber and interface properties to enhance the simulated performance of CZTSSe solar cells. The thermal stability of the proposed structure is also evaluated by examining the effect of operating temperature on key photovoltaic parameters. To address performance limitations, a BaSi₂-based back surface field (BSF) layer is incorporated, and numerical simulations are carried out using the SCAPS-1D software. The introduction of the BaSi₂-based BSF layer effectively reduces VOC-related losses and enhances the overall device efficiency. The model's validity is supported through comparison with previously published experimental and simulation data. Incorporating BaSi₂ as the BSF layer increases the simulated efficiency from 12.54% to 16.37%. In parallel, a systematic study of the CZTSSe absorber layer was conducted to determine the optimal thickness and doping concentration for further improving solar cell performance. The values can be varied systematically, such as the absorber's layer thickness from 0.5 to 3μm, and the doping concentration is modified from 1012 to 1018 cm- 3. An efficiency of 19.61% can be achieved for the recently improved configuration using a CZTSSe thickness of just only 0.5μm under idealized conditions but not experimentally realistic. This reduction of the thickness of the CZTSSe solar cells is an important factor in the decline of performance, but it can improve the lifetime of minority carriers.

A simulation approach for investigating the performances of cadmium telluride solar cells using doping concentrations, carrier lifetimes, thickness of layers, and band gaps

In this work, a new wide-band-gap n-type buffer layer, ZnSe, has been proposed and investigated for an antimony selenide (Sb2Se3)-based thin-film solar cell. The study aims to boost the Sb2Se3-based solar cell's performance by incorporating a cheap, widely accessible ZnSe buffer layer into the solar cell structure as a replacement for the CdS layer. Solar Cell Capacitance Simulator in One Dimension (SCAPS-1D) simulation software is used to thoroughly analyze the photovoltaic parameters of the heterojunction structure ZnSe/Sb2Se3. It includes open circuit voltage (V OC), short-circuit current density (J SC), fill factor (FF), power conversion efficiency (PCE), and external quantum efficiency (EQE). The absorber layer (Sb2Se3) thickness is adjusted from 0.5 to 3.0 μm to perfect the device. In addition, the influence of cell resistances, radiative recombination coefficient, acceptor and donor defect concentration in the Sb2Se3 layer, and interface defects of the ZnSe/Sb2Se3 layer on overall device performance are investigated. The ZnSe buffer layer and the Sb2Se3 absorber layer are designed to have optimal thicknesses of 100 nm and 1.5 μm, respectively. The proposed device's efficiency with optimized parameters is calculated to be 24%. According to the simulation results, it is possible to build Sb2Se3-based thin-film solar devices at a low cost and with high efficiency by incorporating ZnSe as an electron transport layer.

CZTS (Copper Zinc Tin Sulfide) solar cell is a low cost, eco-friendly, highly efficient and most significantly, non-toxic solar cell. In addition, CZTS has a high absorption coefficient and an optimal direct band gap, making it ideal for photovoltaic applications. Therefore, CZTS solar cell has piqued the interest of many researchers. In this research paper, the evaluation on performance of CZTS based solar cell where CZTS performs the act as the active absorber and ZnSe acts as the dedicated buffer layer, is numerically researched through SCAPS-1D simulation software as tool. We varied the absorber layer thickness (500nm-3000nm) and doping concentration (1×1014cm-3-1×10 19cm-3), as well as the buffer layer thickness (30nm-70nm), to achieve optimized cell performance. Furthermore, the impact of back contact and impact of various operating temperature on cell performance was thoroughly checked. It has been observed that, the researched CZTS based solar cell structure (Al:ZnO|i-ZnO|ZnSe|CZTS|Se) attained maximum photo conversion efficiency 25.30%, with an absorber layer thickness of 2000nm and buffer layer thickness of 50nm with Open Circuit voltage V OC =1.1066V, short-circuit current density, J SC =25.84mA/cm2, Fill Factor=88.47%. Simulation showed promising results, indicating that a highly efficient CZTS solar cell is feasible.

We report on the design and photovoltaic performance of nanostructured three dimensional (nano-3D) solar cells with ultrathin amorphous hydrogenated silicon (a-Si:H) absorber layers. Zinc oxide (ZnO) nanorods are employed as the building blocks for the nano-3D solar cells. The ZnO nanorods with controlled morphology are prepared by aqueous solution deposition at 80°C. The nanorod a-Si:H solar cells are realized by depositing n-i-p a-Si:H layers over Ag-coated ZnO nanorods. The photovoltaic performance of the nano-3D solar cells is experimentally demonstrated. With an ultrathin absorber layer of only 25 nm, an efficiency of 3.6% and a short-circuit current density of 8.3 mA/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> are obtained, significantly higher than values achieved for the planar or even the textured counterparts with a three times thicker (∼75 nm) a-Si:H absorber layer. By increasing the absorber layer thickness in the nano-3D solar cells from 25 nm to 75 nm, the efficiency improved from 3.6% to 4.1% and the short-circuit current density increased from 8.3 mA/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> to 13.3 mA/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> . The orthogonalization of the light path and the carrier transport path plays an important role in these nano-3D devices.

Toward improving the performance of Cu2ZnSnS4-based solar cells with Zr, W or sulfurized layers at the SnO2:F/Cu2ZnSnS4 rear interface

The effect of light intensity and temperature on the performance of InGaN solar cells were investigated experimentally. With the increase of light intensity, the short circuit current density (J <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">sc</sub> ) increases linearly and the open circuit voltage (V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">oc</sub> ) increases logarithmically. The filling factor (FF) and relative efficiency (η), however, increase first and then decrease which is explained by the loss coming from the electrical series resistance under higher light intensity. With the increase of temperature, on the other hand, the performance of the solar cell becomes worse. This paper provides useful information concerning the reliability of GaN-based solar cells.

Application of UV/O3 treatment enhancing the performance of Sb2Se3 thin-film solar cells

A comparative analysis of numerical and experimental optimization of CuSbS₂ absorber layer thickness for improved solar cell performance

In this work, a silicon nanowire solar cell for efficient light harvesting in the visible and near-infrared regions is introduced. In this structure, the silicon nanowires (SiNWs) are coated with a graphene layer and plasmonic nanoparticles are distributed on the top surface of the silicon substrate layer. The proposed structure is simulated using the finite difference time domain (FDTD) method to determine the performance of the solar cell by calculating the open-circuit voltage, fill factor, short-circuit current density, and power conversion efficiency. The absorbed light energy is compared for different nanoparticle materials, namely Au, Ag, Al, and Cu, and Au NPs give the best performance. Different values of the radius of the Au NP are simulated, namely 30, 40, 50, and 60 nm, to determine the optimum radius, and the effect of excess carrier concentration on the solar cell performance is also tested. The obtained open-circuit voltage is 0.63 V, fill factor is 0.73, short-circuit current density is 41.7 mA/cm2, and power conversion efficiency is 19.0%. The proposed SiNW solar cell improves the overall efficiency by almost 60%. Furthermore, the effects of the NW length and distance between NWs are also studied in this work. Finally, the distribution of the optical power in different layers along the solar cell and for different solar cell structures is also illustrated in this paper.

Optimal design and photovoltaic performance of eco friendly, stable and efficient perovskite solar cell

Device optimization of CsPbI2Br-based inorganic perovskite solar cells using different charge transport layers via SCAPS-1D

Copper indium gallium selenide (CIGS)-based solar cells have exhibited greater performance than the ones utilizing cadmium telluride (CdTe) or hydrogenated amorphous silicon (a-Si: H) as the absorber. CIGS-based devices are more efficient, considering their device performance, environmentally benign nature, and reduced cost. In this article, we proposed a potential CIGS-absorber-based solar cell with an FTO/ZnSe/CIGS/V2O5/Cu heterostructure, with a V2O5 back-surface field (BSF) layer, SnO2:F (FTO) window layer, and ZnSe buffer layer. Using the solar cell capacitance simulator one-dimensional simulation software, the effects of the presence of the BSF layer, the thickness, bulk defect density, and acceptor density of the absorber layer, buffer layer thickness, interfacial defect density, device resistance, and operating temperature on the open-circuit voltage, short-circuit current, fill factor, and efficiency, as well as on the quantum efficiency and recombination and generation rate, of the device have been explored in detail. The simulation results revealed that only a 1 μm-thick-CIGS absorber layer with V2O5 BSF and ZnSe buffer layers in this structure offers an outstanding efficiency of 31.86% with a VOC of ∼0.9 V. Thus, these outcomes of the CIGS-based proposed heterostructure provide an insightful pathway for fabricating high-efficiency solar cells with performance more promising than the previously reported conventional designs.