Three-Dimensional-Topological-Insulator Tunnel Diodes

Topological insulators are electronic materials that have a bulk band gap like an ordinary insulator but have protected conducting states on their edge or surface. These states are possible due to the combination of spin-orbit interactions and time-reversal symmetry. The two-dimensional (2D) topological insulator is a quantum spin Hall insulator, which is a close cousin of the integer quantum Hall state. A three-dimensional (3D) topological insulator supports novel spin-polarized 2D Dirac fermions on its surface. In this Colloquium the theoretical foundation for topological insulators and superconductors is reviewed and recent experiments are described in which the signatures of topological insulators have been observed. Transport experiments on $\mathrm{Hg}\mathrm{Te}∕\mathrm{Cd}\mathrm{Te}$ quantum wells are described that demonstrate the existence of the edge states predicted for the quantum spin Hall insulator. Experiments on ${\mathrm{Bi}}_{1\ensuremath{-}x}{\mathrm{Sb}}_{x}$, ${\mathrm{Bi}}_{2}{\mathrm{Se}}_{3}$, ${\mathrm{Bi}}_{2}{\mathrm{Te}}_{3}$, and ${\mathrm{Sb}}_{2}{\mathrm{Te}}_{3}$ are then discussed that establish these materials as 3D topological insulators and directly probe the topology of their surface states. Exotic states are described that can occur at the surface of a 3D topological insulator due to an induced energy gap. A magnetic gap leads to a novel quantum Hall state that gives rise to a topological magnetoelectric effect. A superconducting energy gap leads to a state that supports Majorana fermions and may provide a new venue for realizing proposals for topological quantum computation. Prospects for observing these exotic states are also discussed, as well as other potential device applications of topological insulators.

We predict planar Sb/Bi honeycomb to harbor a two-dimensional (2D) topological crystalline insulator (TCI) phase based on first-principles computations. Although buckled Sb and Bi honeycombs support 2D topological insulator (TI) phases, their structure becomes planar under tensile strain. The planar Sb/Bi honeycomb structure restores the mirror symmetry, and is shown to exhibit non-zero mirror Chern numbers, indicating that the system can host topologically protected edge states. Our computations show that the electronic spectrum of a planar Sb/Bi nanoribbon with armchair or zigzag edges contains two Dirac cones within the band gap and an even number of edge bands crossing the Fermi level. Lattice constant of the planar Sb honeycomb is found to nearly match that of hexagonal-BN. The Sb nanoribbon on hexagonal-BN exhibits gapped edge states, which we show to be tunable by an out-of-the-plane electric field, providing controllable gating of edge state important for device applications.

Two-dimensional (2D) topological insulators (TIs) are special quantum conductors that possess an insulating bulk but metallic edge with quantized charge and spin conductance protected by electron band topology. The concept of topology and TI has not only renewed our fundamental understanding of electronic properties of solid materials, but also opened an exciting avenue towards potential applications of topological quantum devices with minimized heat dissipation and robustness against disorder. In this video article, I will first introduce and review the concept of TIs within the context of transport properties of solid-state materials. I will then use two examples, the organic 2D TIs and the surface-based 2D topological states, to recap the rapid theoretical and experimental developments made in this emerging field. The existence of quantized edge conductance and topological edge states of 2D TIs has been so far confirmed experimentally in several systems, such as semiconductor quantum wells, 2D transition metal dichalcogenides, metallic overlayer of bismuth on a semiconductor surface. However, discovery of high-temperature 2D TIs and construction of functional TI-based quantum devices remain largely elusive. At the end of this video article, I will offer briefly my personal perspective and possible future directions in low-dimensional topological materials.

Despite considerable interest in two-dimensional (2D) topological insulators (TIs), a fundamental question still remains open how mesoscopic conductance fluctuations in 2D TIs are affected by spin-orbit interaction (SOI). Here, we investigate the effect of SOI on the universal conductance fluctuation (UCF) in disordered 2D TIs. Although 2D TI exhibits UCF like any metallic systems, the amplitude of these fluctuations is distinguished from that of conventional spin-orbit coupled 2D materials. Especially, in 2D systems with mirror symmetry, spin-flip scattering is forbidden even in the presence of strong intrinsic SOI, hence increasing the amplitude of the UCF by a factor of compared with extrinsic SOI that breaks mirror symmetry. We propose an easy way to experimentally observe the existence of such spin-flip scattering in 2D materials. Our findings provide a key to understanding the emergence of a new universal behavior in 2D TIs.

The transmission and current-voltage characteristics of Ga1−xAlxAs superlattice electron-wave quantum-interference filter/emitter negative differential resistance devices are analyzed with and without the self-consistency requirement. The analysis neglects the scattering effects within the superlattice since it is assumed that it is very thin (less than the electron coherence length). Thus, the calculated characteristics correspond to the ballistic component of the current. For the non-self-consistent calculation the single-band effective-mass time-independent Schroedinger equation is solved. For the self-consistent calculation, the Schroedinger and Poisson equations are solved iteratively until a self-consistent electron potential energy and electron density are obtained. It is shown that suitably designed electron-wave quantum-interference filter/emitters can exhibit strong negative differential resistance in the current-voltage characteristics, similar to those of resonant tunneling diodes. For low-to-moderate (2–30 meV) Fermi energies in the conduction band of Ga1−xAlxAs (Si doping concentration less or equal to 2 × 1018 cm−3) and temperatures near 30 K (in the ballistic transport regime), it is shown that space-charge effects are relatively small and result in a slight shift of the current-voltage and transmission characteristics toward higher bias voltages. In a fashion similar to that occurring in resonant tunneling diodes, the self-consistent field in electron-wave filter/emitter negative differential resistance devices partially screens the positive applied bias. Designs of Ga1−xAlxAs resonant devices with current peak-to-valley ratios of ∼50 as well as nonresonant (not exhibiting negative differential resistance) devices are analyzed. The corresponding electron charge density distributions are also presented. Superlattice electron-wave filter/emitter negative differential resistance devices can be used as high-speed switches, oscillators, and as monoenergetic emitters in electroluminescent devices and photodetectors.

The properties that distinguish topological crystalline insulator (TCI) and topological insulator (TI) rely on crystalline symmetry and time-reversal symmetry, respectively, which encodes different bulk and surface/edge properties. Here, we predict theoretically that electron-doped TlM (M = S and Se) (110) monolayers realize a family of two-dimensional (2D) TCIs characterized by mirror Chern number CM = -2. Remarkably, under uniaxial strain (≈ 1%), a topological phase transition between 2D TCI and 2D TI is revealed with the calculated spin Chern number CS = -1 for the 2D TI. Using spin-resolved edge states analysis, we show different edge-state behaviors, especially at the time reversal invariant points. Finally, a TlBiSe2/NaCl quantum well is proposed to realize an undoped 2D TCI with inverted gap as large as 0.37 eV, indicating the high possibility for room-temperature observation.

We report on the observation of photogalvanic effects in epitaxially grown Sb2Te3 and Bi2Te3 three-dimensional (3D) topological insulators (TI). We show that asymmetric scattering of Dirac fermions driven back and forth by the terahertz electric field results in a dc electric current. Because of the "symmetry filtration" the dc current is generated by the surface electrons only and provides an optoelectronic access to probe the electron transport in TI, surface domains orientation, and details of electron scattering in 3D TI even at room temperature.

Highly stable antimonene, as the cousin of phosphorene from group-VA, has opened up exciting realms in the two-dimensional (2D) materials family. However, pristine antimonene is an indirect band gap semiconductor, which greatly restricts its applications for optoelectronics devices. Identifying suitable materials, both responsive to incident photons and efficient for carrier transfer, is urgently needed for ultrathin devices. Herein, by means of first-principles computations we found that it is rather feasible to realize a new class of 2D materials with a direct bandgap and high carrier mobility, namely antimonene oxides with different content of oxygen. Moreover, these tunable direct bandgaps cover a wide range from 0 to 2.28 eV, which are crucial for solar cell and photodetector applications. Especially, the antimonene oxide (18Sb-18O) is a 2D topological insulator with a sizable global bandgap of 177 meV, which has a nontrivial Z2 topological invariant in the bulk and the topological states on the edge. Our findings not only introduce new vitality into 2D group-VA materials family and enrich available candidate materials in this field but also highlight the potential of these 2D semiconductors as appealing ultrathin materials for future flexible electronics and optoelectronics devices.

The measurement of topological insulators is usually achieved by measuring spectra, which is inadequate in higher-order topological insulators because the separation of bandgaps may be blurred, such as body boundaries and corner state hybridization, and the above measurement requires that the energy of the topological mode must be located in the bulk bandgap to be measured. Recent experiments have shown a strong relationship between the fractional mode charge and the location of the Wannier center in the crystal body. The fractional quantization of the corner charge originates from the filling anomaly, and the fractional mode charge can be calculated from experimental measurements of the local density of states to describe the topological state of the system, which has been demonstrated in optical systems. We have achieved a similar effect in acoustics by utilizing a coupled acoustic-cavity system featuring C3, C4, and C6 symmetries for simulation. Furthermore, we extended our study to 3D third-order topological crystalline insulators to validate the fractional-corner charge approach. The simulation and theoretical results demonstrate that the fractional mode charge can clearly identify the high-order topology, even without gap states.

: Spin has long been known to have the potential to perform universal quantum computation. To realize quantum computation with spins one needs an extraordinary amount of control over the spins so we can set, manipulate, and read out the various processes required in information processing. This is a daunting task as these processes are not immune from decoherence. While one can manipulate single spins with high-fidelity and long coherence times, there is no clear path to move from single spin manipulation to many spins. Recent advances have revealed a new type of information processing, topological quantum computation, which is immune from environment related decoherence. Topological information processing relies on the manipulation of anyons, particles which obey non-Abelian statistics. The simplest of these particles, Majorana fermions, are believed to exist as excitations in exotic materials under extreme conditions. Additionally, Majorana fermions have been proposed to exist in a new class of materials commonly referred to as topological insulators coupled with superconducting contacts under much less extreme conditions. In this work, we propose to theoretically investigate the formation, manipulation, entanglement and detection of Majorana fermions in diamond-topological insulator-superconductor heterojunctions. Furthermore, we propose to further investigate the relationship between superconducting elements and 2D and 3D topological insulators. The tasks we outline in this proposal will be undertaken using a variety of analytical tools to provide insight into the system behavior at the theoretical limits and numerical techniques to yield results in experimentally realistic conditions. The goal is to make significant and measurable advances towards transformative information processing technologies that have the potential to vastly increase operational capabilities of multiple Air Force applications.

Despite the superiority of two-dimensional (2D) topological insulators (TIs) over their three-dimensional (3D) counterparts in various aspects and the essential distinction between them in structural symmetry, the variation of the topological one-dimensional (1D) edge states upon magnetic interaction and their application for spintronic devices have not been sufficiently illuminated. Here, we reveal that 1D edge states of 2D TIs have a unique magnetic response never observed in 2D surface states of 3D TIs, and using this exotic nature we propose a way to utilize the spin-polarized channel for spintronic applications. We investigate the effects of width and magnetic decoration on the 1D topological edge state of Bi bilayer nanoribbons (BNRs). Through the Zak phase, we find that the zero-energy states are enforced at the magnetic domain boundaries in the Cr-decorated BNR and directly examine their robustness using short-range magnetic domain structures. We also demonstrate that 1D edge states of BNRs can be selectively and reversibly controlled by the combination of magnetic reorientation and electric field without compromising their structural integrity. Our work provides a fundamental understanding of 1D topological edge states and shows the opportunity of using these features in spintronic devices.

This paper describes the design of a voltage-controlled oscillator (VCO) based on the negative differential resistance (NDR) devices. The NDR devices used in the work is fully composed by the metal-oxide-semiconductor field-effect-transistor (MOS) devices. This MOS-NDR device can exhibit the NDR characteristic in its current-voltage curve by suitably arranging MOS parameters. The VCO is constructed by three low-power MOS-NDR inverter. This novel VCO has a range of operation frequency from 151MHz to 268MHz. It consumes 24.5mW in its central frequency of 260MHz using a 2 V power supply. This VCO is fabricated by 0.35 /spl mu/m CMOS process and occupied an area of 120 /spl times/ 86 /spl mu/m/sup 2/.

We investigate the topological phases of a three-dimensional (3D) topological insulator (TI) without the top–bottom inversion symmetry. We calculate the momentum depended spin Chern number to extract the phase diagram. Various phases are found and we address the dependence of phase boundaries on the strength of inversion asymmetry. Opposite to the quasi-two-dimensional thin film TI, in our 3D system the TI state is stabilized by the structure inversion asymmetry (SIA). With a strong SIA the 3D TI phase can exist even under a large Zeeman field. In a tight-binding form, the surface modes are discussed to confirm with the phase diagram. Particularly we find that the SIA cannot destroy the surface states but open a gap on its spectrum.

Inducing long-range magnetic order in 3D topological insulators can gap the Dirac-like metallic surface states, leading to exotic new phases such as the quantum anomalous Hall effect or the axion insulator state. These magnetic topological phases can host robust, dissipationless charge and spin currents or unique magnetoelectric behavior, which can be exploited in low-energy electronics and spintronics applications. Although several different strategies have been successfully implemented to realize these states, to date these phenomena have been confined to temperatures below a few Kelvin. This review focuses on one strategy: inducing magnetic order in topological insulators by proximity of magnetic materials, which has the capability for room temperature operation, unlocking the potential of magnetic topological phases for applications. The unique advantages of this strategy, the important physical mechanisms facilitating magnetic proximity effect, and the recent progress to achieve, understand, and harness proximity-coupled magnetic order in topological insulators are discussed. Some emerging new phenomena and applications enabled by proximity coupling of magnetism and topological materials, such as skyrmions and the topological Hall effect, are also highlighted, and the authors conclude with an outlook on remaining challenges and opportunities in thefield.

The importance of global band topology is unequivocally recognized in condensed matter physics, and new states of matter, such as topological insulators, have been discovered. Owing to their bulk band topology, 3D topological insulators possess a massless Dirac dispersion with spin–momentum locking at the surface. Although 3D topological insulators were originally proposed in time-reversal invariant systems, the onset of a spontaneous magnetization or, equivalently, a broken time-reversal symmetry leads to the formation of an exchange gap in the Dirac band dispersion. In such magnetic topological insulators, tuning of the Fermi level in the exchange gap results in the emergence of a quantum Hall effect at zero magnetic field, that is, of a quantum anomalous Hall effect. Here, we review the basic concepts of magnetic topological insulators and their experimental realization, together with the discovery and verification of their emergent properties. In particular, we discuss how the development of tailored materials through heterostructure engineering has made it possible to access the quantum anomalous Hall effect, the topological magnetoelectric effect, the physics related to the chiral edge states that appear in these materials and various spintronic phenomena. Further theoretical and experimental research on magnetic topological insulators will provide fertile ground for the development of new concepts for next-generation electronic devices for applications such as spintronics with low energy consumption, dissipationless topological electronics and topological quantum computation. Magnetic topological insulators enable the investigation of the interplay between magnetism and topological electronic states. This Review summarizes the basic notions of magnetic topological insulators and the progress in the experimental realization of exotic topological phenomena.