Z2 characterization for three-dimensional multiband Hubbard models

Recent theory and experiment have revealed that strong spin-orbit coupling can have dramatic qualitative effects on the band structure of weakly interacting solids. Indeed, it leads to a distinct phase of matter, the topological band insulator. In this paper, we consider the combined effects of spin-orbit coupling and strong electron correlation, and show that the former has both quantitative and qualitative effects upon the correlation-driven Mott transition. As a specific example we take Ir-based pyrochlores, where the subsystem of Ir 5d electrons is known to undergo a Mott transition. At weak electron-electron interaction, we predict that Ir electrons are in a metallic phase at weak spin-orbit interaction, and in a topological band insulator phase at strong spin-orbit interaction. Very generally, we show that with increasing strength of the electron-electron interaction, the effective spin-orbit coupling is enhanced, increasing the domain of the topological band insulator. Furthermore, in our model, we argue that with increasing interactions, the topological band insulator is transformed into a "topological Mott insulator" phase, which is characterized by gapless surface spin-only excitations. The full phase diagram also includes a narrow region of gapless Mott insulator with a spinon Fermi surface, and a magnetically ordered state at still larger electron-electron interaction.

We investigate the quantum many-body instabilities of the extended Hubbard model for spinless fermions on the honeycomb lattice with repulsive nearest-neighbor and 2nd nearest-neighbor density-density interactions. Recent exact diagonalization and infinite density matrix renormalization group results suggest that a putative topological Mott insulator phase driven by the 2nd nearest-neighbor repulsion is suppressed, while other numerically exact approaches support the topological Mott insulator scenario. In the present work, we employ the functional renormalization group (fRG) for correlated fermionic systems. Our fRG results hint at a strong suppression of the scattering processes stabilizing the topological Mott insulator. From analyzing the effects of fermionic fluctuations, we obtain a phase diagram which is the result of the competition of various charge ordering instabilities.

A quantum spin Hall (QSH) insulator hosts topological states at the one-dimensional (1D) edge, along which backscattering by nonmagnetic impurities is strictly prohibited. Its 3D analogue, a weak topological insulator (WTI), possesses similar quasi-1D topological states confined at side surfaces. The enhanced confinement could provide a route for dissipationless current and better advantages for applications relative to strong topological insulators (STIs). However, the topological side surface is usually not cleavable and is thus hard to observe. Here, we visualize the topological states of the WTI candidate ZrTe5 by spin and angle-resolved photoemission spectroscopy (ARPES): a quasi-1D band with spin-momentum locking was revealed on the side surface. We further demonstrate that the bulk band gap is controlled by external strain, realizing a more stable WTI state or an ideal Dirac semimetal (DS) state. The highly directional spin-current and the tunable band gap in ZrTe5 will provide an excellent platform for applications.

Topological phases in Bi/Sb planar and buckled honeycomb monolayers

Using spin-resolved and angle-resolved photoemission spectroscopy and first-principles calculations, we have identified bulk band inversion and spin polarized surface state evolved from a weak topological insulator (TI) phase in van der Waals materials Nb3XTe6 (X = Si, Ge). The fingerprints of weak TI homologically emerge with hourglass fermions, as multi nodal chains composed by the same pair of valence and conduction bands gapped by spin orbit coupling. The novel topological state, with a pair of valence and conduction bands encoding both weak TI and hourglass semimetal nature, is essential and guaranteed by nonsymmorphic symmetry. It is distinct from TIs studied previously based on band inversions without symmetry protections.

The electronic structure at the interface between a topological band insulator and a Mott insulator is studied within layer dynamical mean field theory. To represent the bulk phases of these systems, we use the generalized Bernevig-Hughes-Zhang model that incorporates the Hubbard-like onsite Coulomb energy U in addition to the spin-orbit coupling term that causes band inversion. The topological and Mott insulating phases are realized by appropriately choosing smaller and larger values of U, respectively. As expected, the interface is found to be metallic because of the localized edge state. When the Coulomb energy in the Mott insulator is close to the critical value, however, this edge state exhibits its largest amplitude deep within the Mott insulator rather than at the interface. This finding corresponds to a new type of proximity effect induced by the neighboring topological band insulator and demonstrates that, as a result of spin-orbit coupling within the Mott insulator, several layers near the interface convert from the Mott insulating phase to a topological insulating phase. Moreover, we argue that the ordinary proximity effect, whereby a Kondo peak is induced in a Mott insulator by neighboring metallic states, is accompanied by an additional reverse proximity effect, by which the Kondo peak gives rise to an enhancement of the density of states in the neighboring metallic layer.

The properties that distinguish topological crystalline insulator (TCI) and topological insulator (TI) rely on crystalline symmetry and time-reversal symmetry, respectively, which encodes different bulk and surface/edge properties. Here, we predict theoretically that electron-doped TlM (M = S and Se) (110) monolayers realize a family of two-dimensional (2D) TCIs characterized by mirror Chern number CM = -2. Remarkably, under uniaxial strain (≈ 1%), a topological phase transition between 2D TCI and 2D TI is revealed with the calculated spin Chern number CS = -1 for the 2D TI. Using spin-resolved edge states analysis, we show different edge-state behaviors, especially at the time reversal invariant points. Finally, a TlBiSe2/NaCl quantum well is proposed to realize an undoped 2D TCI with inverted gap as large as 0.37 eV, indicating the high possibility for room-temperature observation.

It has been proposed that adding disorder to a topologically trivial mercury telluride/cadmium telluride (HgTe/CdTe) quantum well can induce a transition to a topologically nontrivial state. The resulting state was termed topological Anderson insulator and was found in computer simulations of the Bernevig-Hughes-Zhang model. Here, we show that the topological Anderson insulator is a more universal phenomenon and also appears in the Kane-Mele model of topological insulators on a honeycomb lattice. We numerically investigate the interplay of the relevant parameters, and establish the parameter range in which the topological Anderson insulator exists. A staggered sublattice potential turns out to be a necessary condition for the transition to the topological Anderson insulator. For weak enough disorder, a calculation based on the lowest-order Born approximation reproduces quantitatively the numerical data. Our results thus considerably increase the number of candidate materials for the topological Anderson insulator phase.

Our work reveals a class of three-dimensional materials whose main features are dominated by d-orbital states. Their unique properties are derived from the low-energy states t2g. Without spin-orbital coupling (SOC), we find a triple degenerate point with a quadratic dispersion, demonstrated by an effective Hamiltonian. When SOC is included, the sign of SOC could determine the topological phases of materials: a negative SOC contributes a Dirac semimetal phase with a quadratic energy dispersion, whereas a positive SOC leads to a strong topological insulator phase. There exist clear surface states for the corresponding topological phases. Very interestingly, by application of a triaxial strain, the sequence of bands can be exchanged, as do the topological phases. In particular, there exists a 6-fold degenerate point under a critical strain. Furthermore, we use a uniaxial compressive/tensile strain, changing the quadratic Dirac point into a linear Dirac/strong topological insulator phase.

We study perturbative and global anomalies at the boundaries of bosonic analogues of integer quantum Hall (BIQH) and topological insulator (BTI) phases using a description of the boundaries of these phases in terms of a nonlinear sigma model (NLSM) with Wess-Zumino term. One of the main results of the paper is that these anomalies are robust against arbitrary smooth deformations of the target space of the NLSM which describes the phase, provided that the deformations also respect the symmetry of the phase. In the first part of the paper we discuss the perturbative $U(1)$ anomaly at the boundary of BIQH states in all odd (spacetime) dimensions. In the second part we study global anomalies at the boundary of BTI states in even dimensions. In a previous work [Phys. Rev. B 95, 035149 (2017)] we argued that the boundary of the BTI phase exhibits a global anomaly which is an analogue of the parity anomaly of Dirac fermions in three dimensions. Here we elevate this argument to a proof for the boundary of the two-dimensional BTI state by explicitly computing the partition function of the gauged NLSM describing the boundary. We then use the powerful equivariant localization technique to show that this global anomaly is robust against all smooth deformations of the target space of the NLSM which preserve the $U(1)\rtimes\mathbb{Z}_2$ symmetry of the BTI state. We also comment on the difficulties of generalizing this latter proof to higher dimensions. Finally, we discuss the expected low energy behavior of the boundary theories studied in this paper when the coupling constants are allowed to flow under the renormalization group.

Dual topological materials are unique topological phases that host coexisting surface states of different topological nature on the same or on different material facets. Here, we show that Bi2TeI is a dual topological insulator. It exhibits band inversions at two time reversal symmetry points of the bulk band, which classify it as a weak topological insulator with metallic states on its 'side' surfaces. The mirror symmetry of the crystal structure concurrently classifies it as a topological crystalline insulator. We investigated Bi2TeI spectroscopically to show the existence of both two-dimensional Dirac surface states, which are susceptible to mirror symmetry breaking, and one-dimensional channels that reside along the step edges. Their mutual coexistence on the step edge, where both facets join, is facilitated by momentum and energy segregation. Our observation of a dual topological insulator should stimulate investigations of other dual topology classes with distinct surface manifestations coexisting at their boundaries.

We report the signature of a strain-controlled topological phase transition in the electronic structure of a quasi-one-dimensional superconductor ${\mathrm{TaSe}}_{3}$. Using angle-resolved photoemission spectroscopy and first-principles calculation, ${\mathrm{TaSe}}_{3}$ is identified to be in a weak topological insulator phase which has topologically nontrivial surface states only at the allowed planes. Under uniaxial tensile strain, a Dirac point and the topological surface state emerge on the originally forbidden $(10\overline{1})$ plane, which demonstrates the transition to a strong topological insulator phase. Our results accomplish the experimental realization of possible topological insulating phases in ${\mathrm{TaSe}}_{3}$ and highlight the possibility of coupling the superconductivity with two distinct topological insulating phases in a controllable manner.

Topological Mott insulator by block spin phenomenology

We predict planar Sb/Bi honeycomb to harbor a two-dimensional (2D) topological crystalline insulator (TCI) phase based on first-principles computations. Although buckled Sb and Bi honeycombs support 2D topological insulator (TI) phases, their structure becomes planar under tensile strain. The planar Sb/Bi honeycomb structure restores the mirror symmetry, and is shown to exhibit non-zero mirror Chern numbers, indicating that the system can host topologically protected edge states. Our computations show that the electronic spectrum of a planar Sb/Bi nanoribbon with armchair or zigzag edges contains two Dirac cones within the band gap and an even number of edge bands crossing the Fermi level. Lattice constant of the planar Sb honeycomb is found to nearly match that of hexagonal-BN. The Sb nanoribbon on hexagonal-BN exhibits gapped edge states, which we show to be tunable by an out-of-the-plane electric field, providing controllable gating of edge state important for device applications.

Topological quantum states require stringent combination of crystal symmetry and spin–orbit coupling (SOC) strength. Here, we report that the ternary Zintl compound series BaCaX (X = Si, Ge, Sn and Pb, Group IV) in the same crystal structure having eight valence electrons per formula unit can host two different topological quantum phases, controlled by atomic size and SOC strength. BaCaSi is a nodal-line semimetal (NLSM) with band inversion protected by mirror symmetry and hosts a strong topological insulator (TI) state when SOC is turned on, thus, a NLSM-TI phase. Moving to larger atomic sizes and heavier atoms, BaCaGe and BaCaSn are normal insulators (NIs); then, with the strongest SOC in BaCaPb, a different band inversion is induced, giving a strong TI phase without the need of NLSM. Thus, we also predict two types of topological transitions in a phase diagram for BaCaX: (1) NLSM-TI to NI, then to TI by tuning atomic size and SOC strength via alloying, and (2) NI or TI to NLSM-TI via pressure.