- Supplementary Content
- 10.1021/acsnanoscienceau.4c00080
Fermi VelocityDependent Critical Current in BallisticBilayer Graphene Josephson Junctions
- Mar 19, 2025
- ACS Nanoscience Au
- Amis Sharma + 8 more +8
We perform transport measurements on proximitized, ballistic,bilayergraphene Josephson junctions (BGJJs) in the intermediate-to-long junctionregime (L > ξ). We measure the device’sdifferential resistance as a function of bias current and gate voltagefor a range of different temperatures. The extracted critical current IC follows an exponential trend with temperature:exp(−kBT/δE). Here δE = ℏνF/2πL: an expectedtrend for intermediate-to-long junctions. From δE, we determine the Fermi velocity of the bilayer graphene, whichis found to increase with gate voltage. Simultaneously, we show thecarrier density dependence of δE, which isattributed to the quadratic dispersion of bilayer graphene. This isin contrast to single layer graphene Josephson junctions, where δE and the Fermi velocity are independent of the carrierdensity. The carrier density dependence in BGJJs allows for additionaltuning parameters in graphene-based Josephson junction devices.
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