Artificial synaptic transistors represent promising building blocks for time- and frequency-domain signal processing. However, most electrolyte-gated devices are constrained by fixed synaptic plasticity and frequency responses, limiting their functional versatility. Herein, we demonstrate a dual-gate MoS2 synaptic transistor, with the second gate serving as an independent control terminal to achieve gate-tunable frequency-selective characteristics. The device exhibits essential synaptic functionalities, including excitatory postsynaptic currents (EPSCs), paired-pulse facilitation (PPF), and spike-frequency-dependent plasticity (SFDP). It achieves a millivolt-level gate sensitivity (down to 5 mV) and an ultralow energy consumption of ∼187 fJ per synaptic event. Notably, the frequency-dependent response of the transistor can be dynamically modulated via the dual-gate configuration, where the second gate enables the cutoff frequency (fc) to be tuned from 10.79 to 12.8 Hz, providing a tunable window for high-pass signal processing. Image-processing simulations confirm that tuning the cutoff frequency allows selective enhancement of high-frequency features (e.g., edges and textures). Collectively, these findings illustrate that a dual-gate MoS2 synaptic transistor can integrate short-term plasticity, tunable frequency-selective processing, and low energy consumption into a compact platform, holding significant promise for advanced neuromorphic signal processing.

All-inorganic CsPbX3 (X = Cl, Br, I) perovskites have demonstrated great potential for optoelectronic applications due to their excellent optical properties and environmental stability. Random lasing is a particularly promising direction because of its simple and cavity-free feedback mechanism. However, efficient random lasing in CsPbX3 thin films remains challenging because of their high defect densities, non-radiative recombination rate, and poor surface morphology. Herein, we present a simple method to fabricate high-quality CsPbBr3 thin films, using polymethyl methacrylate–toluene solution as antisolvent, which simultaneously enables surface passivation of perovskite crystals. The as-synthesized films exhibit improved crystallinity, smoother morphology, and prolonged carrier lifetime. Owing to these factors, the films achieve a low threshold random lasing (9.59 µJ/cm2), along with an ultrafast photon decay of 3.14 ps at 2.4 times the threshold. Notably, the random lasing can be realized across the sample area. This work highlights the effect of polymer passivation in enhancing film quality and enabling low-threshold, short-pulse random lasing. These findings provide a promising strategy for large-area, multi-point integrated photonics applications based on perovskite thin films.

Spin-torque and spin-Hall oscillators (SHOs) have emerged as promising candidates for building blocks in neuromorphic computing due to their ability to synchronize mutually, a process that can be mediated by propagating spin waves. We demonstrate a SHO that takes advantage of a low-damping magnetic garnet with dominant perpendicular magnetic anisotropy (PMA), namely gallium-substituted yttrium-iron-garnet (Ga:YIG). In-plane magnetized Ga:YIG allows for the operation at a high efficiency level while also enabling resonant spin-wave emission. A nonlinear self-localization of the excitation is avoided by exploiting the positive nonlinear frequency shift, which facilitates a current-controlled frequency of the emitted spin waves. Using micro-focused Brillouin light scattering spectroscopy, we investigate the properties of the local auto-oscillation and its spin-wave emission. Multiple modes are excited and compete internally, with two propagating modes detected up to distances larger than 10 μm. Their frequencies combine to an extended frequency bandwidth of ∼1.6 GHz. The experimentally observed two-mode system and its transition to a single mode at higher currents are reproduced via micromagnetic simulations, which account for the spatial variation of the PMA arising due to the microstructures on Ga:YIG. Our results propose a promising platform for hosting SHOs, interconnected via propagating spin waves, with particular relevance to neuromorphic computing.

The recent surge in data generated by emerging applications has exposed intrinsic bottlenecks in conventional von Neumann architectures, where physically separated processing and memory units limit bandwidth and energy efficiency. Neuromorphic computing offers a brain-inspired approach that unifies computation and memory within a single hardware framework, enabling massively parallel, low-power information processing. Among various device candidates, memtransistors incorporate a gate terminal that enables independent modulation of resistive switching and channel conductance, thereby allowing the realization of complex learning functions and effectively suppressing sneak-path currents in array architectures. This perspective outlines the operation principles of memtransistors based on diverse physical mechanisms, including ion migration, charge trapping, ferroelectric switching, and phase transitions, and then discusses recent materials and architectural engineering strategies, with particular emphasis on two-dimensional channels and scalable array integration. Beyond device-level behavior, bio-inspired functionalities, such as heterosynaptic and homeostatic plasticity, are highlighted as key ingredients for stable and self-regulated learning in neural networks. The integration of memtransistors with sensory modules is further examined to enable near-sensor and in-sensor computing, paving the way for multimodal signal processing that parallels biological perception. Finally, critical challenges and opportunities in variability control, CMOS-compatible processing, and three-dimensional, multisensory integration are identified, indicating that continued progress in material design and architecture optimization will be essential for positioning memtransistors as key enablers of autonomous, bio-inspired intelligence in future robotics, healthcare, and cognitive electronics.

This paper describes the physical origin of VTH instabilities in β-Ga2O3 finFETs, based on electro-optical measurements. In particular, (i) we investigated the VTH instability by means of pulsed ID–VGs, demonstrating the existence of an electron trapping process involving border states in the dielectric; then, (ii) we analyzed the charge trapping kinetics at high temperatures, identifying a temperature-dependent mechanism having activation energy of 0.44 ± 0.08 eV; and finally, (iii) we describe a new experimental methodology to investigate the optically stimulated emission of the trapped carriers. The results were employed to develop a quantitative model that identifies, as a root cause for trapping, the presence of a defect band located ∼3.3 eV below the conduction band edge of the dielectric layer.

Recently, tissue-adhesive materials have been extensively developed for biomedical purposes, including the sealing of surgical sites to prevent postoperative leakage. In particular, tannic acid (TA)-based composite tissue adhesives have enormous potential for sealing and dressing surgical sites. In this study, a paintable and syringe-extrudable adhesive (P-TAPE) was prepared by mixing pectin, TA, and polyethylene glycol (PEG), followed by centrifugation without external curing. The P-TAPE tissue adhesives showed excellent processability and usability because of their low shear viscosity and mild shear-thinning properties compared to the TA/PEG (TAPE) composite tissue adhesives, and they could be readily injected using 18–26 G needles. The P-TAPE tissue adhesives formed film structures on the tissue after brushing or injecting P-TAPE. In addition, P-TAPE showed low cytotoxicity when examined by co-culture methods using a Transwell system, revealing low acute cytotoxicity and favorable cell recovery. P-TAPE also exhibited excellent underwater adhesive properties with stable interfacial contacts, which were assessed on glass, metal, and porcine intestine tissues in a water bath. In addition, the P-TAPE adhesives could seal 3 mm holes in the intestine with increased bursting pressures. Thus, the P-TAPE adhesives prepared using a facile method exhibited excellent handling, durable tissue adhesion, and effective sealing, indicating their enormous potential as versatile tissue adhesive materials for leakage prevention.

This paper presents a gas sensor based on an integrated metasurface design incorporating borophene, germanene, phosphorene, and graphene. The sensor leverages the unique properties of these two-dimensional materials arranged in a precisely engineered geometric configuration of circular and square ring resonators. Comprehensive simulation and optimization studies demonstrate that the sensor achieves a maximum sensitivity of 700 GHz/RIU, a figure of merit of 9.459 RIU−1, and a detection accuracy of 13.514. Meanwhile, the extensive optimization procedure regarding the sensor’s performance was analyzed across varying parameters, including graphene chemical potential (0.1–0.9 eV), angle of incidence (0–80°), and resonator dimensions. In addition, a machine learning approach using locally weighted linear regression was implemented to optimize the sensor response, achieving prediction accuracies up to 100% R2. The proposed design offers a promising platform for real-time, highly sensitive toxic gas detection with potential applications in industrial safety and environmental monitoring.

Earth-abundant zinc phosphide (Zn3P2) holds great promise as a photovoltaic absorber for thin-film applications, owing to its direct bandgap of ∼1.5 eV and its high absorption coefficient in the visible spectrum. Nonetheless, questions remain about the material’s stability in atmospheric environments, given its tendency to react with surrounding water vapor and oxygen. This work presents a comprehensive long-term study to understand how environmental exposure impacts high-quality, monocrystalline epitaxial zinc phosphide. Through a combination of various experimental techniques, such as ellipsometry, Raman spectroscopy, x-ray diffraction measurements, scanning transmission electron microscopy, energy dispersive x-ray spectroscopy, secondary ion mass spectroscopy, and x-ray photoelectron spectroscopy, we reveal that exposure to the atmosphere causes substantial oxidation of the thin film surface, penetrating several tens of nanometers into the bulk material. Finally, we show that degradation can be effectively prevented by applying a thin dielectric layer, such as Si3N4, or by simply storing the unprotected thin films under vacuum. These findings provide valuable guidelines for the proper handling of the material prior to device fabrication.

Metal–organic frameworks (MOFs) represent a category of crystalline porous materials that have attracted considerable interest owing to their structural flexibility and capacity to undergo reversible transformations in response to external stimuli. This review examines the underlying mechanisms that facilitate these structural changes, the various types of stimuli capable of inducing them, and the wide-ranging applications that capitalize on these dynamic properties. The discussion elucidates that the flexibility inherent in MOFs derives from several factors, including the characteristics of the metal cluster, the coordination geometry, the rigidity or flexibility of the organic linkers, and the overall topology of the framework. It is emphasized that minor alterations in these molecular-level attributes can result in significant variations in the structural behavior of MOFs, encompassing phenomena such as breathing, gate opening, and both negative and positive thermal expansion. Moreover, the review explores the experimental and computational methodologies employed to investigate MOF flexibility, incorporating in situ characterization techniques and molecular modeling approaches. It highlights how the interplay between framework design, guest interactions, and defect engineering can be strategically utilized to develop stimuli-responsive MOFs with customized functionalities suitable for applications in areas such as gas separation, gas storage, and sensing. In conclusion, the review underscores the importance of comprehending and manipulating structural transformations in MOFs, a consideration that has emerged as a key element in contemporary materials science and engineering.