The paper presents a new current mode biquadratic filter with one input and three outputs using differential voltage current conveyor (DVCC) and four passive components. The proposed circuit can simultaneously realize low-pass, band-pass, and high-pass filter functions without changing the circuit topology and passive elements. The circuit exhibits a good frequency performance and low-sensitivity figures. PSPICE simulation using 0.5 μm CMOS parameters are given to validate the proposed circuit. The circuit provides a simple yet novel solution to the current-mode filtering after appropriate incorporation of current sensing elements in form of current buffers.

This paper investigates the transition frequencies () of an inductively terminated CMOS source follower buffer for negative resistance behavior at which the effective shunt resistance looking into the source of the buffer cell changes sign. Possible limiting frequencies of oscillation are determined based on resonators formed by a grounded gate inductor and a parasitic capacitance at the gate of the negative resistance buffer cell. The range of frequencies of oscillation of this negative resistance buffer cell for variations in the different circuit parameters/elements is explored. Following this, a millimeter wave (MMW) oscillator is simulated using the IBM 130 nm CMOS process technology which can operate at 70 GHz. High-frequency MOSFET model was used for these simulations. The cell had an extremely low power dissipation of under 3 mW. Extensive Monte Carlo simulations were carried out for manufacturability analysis considering up to 50% variation in process and geometrical parameters, supply voltage, and ambient temperature. Noise analysis and a simulated estimate of the phase noise in an MMW LC VCO application is also reported.

This paper deals with SiGe HBTs optimization for power amplifier applications dedicated to wireless communications. In this work, we investigate thefT-BVCEOtradeoff by various collector optimization schemes such as epilayer thickness and dopant concentration, and SIC and CAP characteristics. Furthermore, a new trapezoidal base Germanium (Ge) profile is proposed. Thanks to this profile, precise control of Ge content at the metallurgical emitter-base junction is obtained. Gain stability is obtained for a wide range of temperatures through tuning the emitter-base junction Ge percent. Finally, a comprehensive investigation of Ge introduction into the collector (backside Ge profile) is conducted in order to improve thefTvalues at high injection levels.

A new dual‐input differential input active integrator using a current differencing buffered amplifier (CDBA) is proposed. A multiplier element is appropriately used in the circuit whose control voltage (Vc) tunes the integrator time constant (τ) electronically. The design of a voltage controlled quadrature oscillator (VCQO) based on the proposed integrator had been satisfactorily implemented. A new type of measurement for the tuning error of the oscillator based on the Nyquist plot is presented that shows an error of only 2% atfo≈ 1 MHz with Total Harmonic Distortion (THD) less than 3%.

An E-field probe has been developed for EMC immunity tests performed in closed space. The leads are flexible resistive transmission lines. Their influence on the field distribution is negligible. The probe has an isotropic reception from 100 MHz to 18 GHz; the sensitivity is in the 3 V/m–10 V/m range. The device is an accessory of the EMC test chamber. The readout of the field magnitude is carried out by personal computer, which fulfils also the required corrections of the raw data.

The dynamic performance of wide-bandgap 4H-SiC based double drift region (p++ p n n++) IMPATT diode is simulated for the first time at terahertz frequency (0.7 Terahertz) region. The simulation experiment establishes the potential of SiC based IMPATT diode as a high power (2.5×1011 Wm−2) terahertz source. The parasitic series resistance in the device is found to reduce the RF power output by 10.7%. The effects of external radiation on the simulated diode are also studied. It is found that (i) the negative conductance and (ii) the negative resistance of the diode decrease, while, the frequency of operation and the quality factor shift upward under photoillumination. Holes in 4H-SiC based IMPATT are found to dominate the modulation activities. The inequality in the magnitude of electron and hole ionization rates in the semiconductors may be correlated with these findings.

A new wide input range square-rooting circuit is presented. The proposed circuit consists of a dual translinear loop, an absolute value circuit, and current mirrors. A current-mode technique is used to provide wide input range with simple circuitry. The output signal of the proposed circuit is the current which is proportional to the square root of input current. The proposed square-rooting circuit was confirmed by using PSpice simulator program. The simulation results demonstrate that the proposed circuit provides the excellent temperature stability with wide input current range.

A new structural engineering strategy is introduced for optimizing the fabrication of arrayed nanorod materials, optimizing superlattice structures for realizing a strong coupling, and directly developing nanophotonic devices. The strategy can be regarded as “combinatorial” because of the high efficiency in optimizing structures. In this article, this strategy was applied to grow ZnO nanorod arrays, and to develop a new multifunctional photodetector using such nanorod arrays, which is able to simultaneously detect power, energy, and polarization of an incident ultraviolet radiation. The strategy was also used to study the extraordinary dielectric behavior of relaxor ferroelectric lead titanate doped lead magnesium niobate heterophase superlattices in the terahertz frequencies, in order to investigate their dielectric polariton physics and the potential to be integrated with tunable surface resonant plasmonics devices.

This paper details the design of integrated balanced PSK modulator using finline coplanar line hybrid junction. The PSK signal output is in suspended stripline with incident wave carrier in finline. Schottky barrier Diode MA4E2037 has been used for modulation. The balanced configuration offers high isolation between the carrier input port and the modulated carrier output port and thus the pulse width variations and amplitude deviations are suppressed. An insertion loss imbalance of±1.5 dB with an average loss of 2 dB in the two switching states has been achieved over 38.9 to 40 GHz. The phase imbalance is±10 degrees with phase switching from 180 to 199 degrees As the PSK output signal is in suspended stripline, two BPSK modulators can be easily combined together to work as QPSK modulator.