ABSTRACT Self‐aligned top‐gate (SATG) amorphous InGaZnO (a‐IGZO) thin‐film transistors (TFTs) are strong candidates for low‐power display backplanes and back‐end‐of‐line (BEOL)‐integrated circuits. Their scaling, however, is limited by short‐channel effects (SCEs), such as threshold‐voltage (V T ) roll‐off and drain‐induced barrier lowering (DIBL), which are strongly influenced by the lateral effective doping profile, N D (y), formed by oxygen‐vacancy/hydrogen‐related donor diffusion from the source/drain (S/D) extensions. Conventional transfer length method (TLM) approaches provide only indirect, lumped estimates and often lose accuracy in low‐doping regions. Here, we propose a capacitance–voltage (C–V)‐based extraction technique that directly reconstructs N D (y) and key profile parameters—including overlap length (L OV ), gradient length (L Grad ), and base doping concentration (N D,Base )—from measured gate capacitances (C GG /C GS /C GD ). Using L‐split SATG a‐IGZO TFTs with channel lengths ranging from 4.5 to 40 µm, we validate the extracted profiles by directly comparing them with those obtained from a TLM‐based extraction and demonstrate the quantitative prediction of V T (V ON ) roll‐off across different channel lengths. The results reveal that S/D dopant overlap increases the channel‐center doping N D,ch in short channels, thereby accelerating V T roll‐off and enhancing DIBL. This C–V‐based lateral profiling framework provides practical diagnostics and design guidelines for suppressing SCEs in future low‐power, high‐reliability oxide electronics.

ABSTRACT The readily scalable deposition of amorphous oxide semiconductor films is desirable for polymer‐based flexible and large‐area thin‐film transistor technology. Here, the atomic layer deposition (ALD) of p‐type SnO is demonstrated using a new heteroleptic tin(II) precursor. The films exhibit a disordered microstructure, due to the intercalation of fragments of the precursor ligands. Annealing induces crystallization of SnO, as volatile impurities are expelled from the film. Initial examination of bottom gate SnO thin‐film transistors with SiO 2 dielectric exhibit a maximum field‐effect mobility of 1.9 cm 2 V −1 s −1 and a minimum threshold voltage of 2 V, just before the onset of crystallization. Once capped with an alumina passivation layer, the devices have stable transfer characteristics, post annealing, over a period of two years, and a stable field effect mobility under negative bias stress of 1 MV cm −1 for 2 h at ambient. The disordered SnO semiconductor characteristics make it a candidate for polymer‐based CMOS electronics, where a low thermal budget meets the requirements of polymeric substrates.

ABSTRACT Quasi‐2D semiconducting Bi 2 O 2 Se has emerged as a promising candidate for beyond‐silicon electronics due to its outstanding transport performances. However, large‐area growth of high‐quality Bi 2 O 2 Se films, which is a critical prerequisite for batch fabrication of electronic devices, remains challenging. Here, we report that wafer‐scale growth of Bi 2 O 2 Se thin films with controllable thicknesses can be achieved on 2‐inch insulating sapphire substrates via quasi‐van der Waals epitaxy using magnetron sputtering. The obtained films show good spatial uniformity and crystallinity across the wafer, enabling massive fabrication of top‐gated Bi 2 O 2 Se/HfO 2 thin film transistors (TFTs) with reliable n‐type enhancement‐mode performances, including positive threshold voltages of ∼1.95 V, field‐effect mobilities of ∼7.15 cm 2 V −1 s −1 , high on/off current ratios of ∼10 5 , and subthreshold swings of 1.4 V/dec. The integrated inverter, NAND, and NOR logic gates show desired functionalities with high voltage gains of ∼24.7. This study represents a significant step toward the real application of Bi 2 O 2 Se in TFT display technology and complex integrated electronics in a low‐cost, scalable, and industry‐compatible manner.

ABSTRACT Orbital torque is one of the potential approaches to achieve current‐driven magnetization switching in next‐generation spintronic devices, where the field‐like orbital torque plays a critical role to obtain field‐free magnetization switching. Here, we report a large field‐like orbital torque observed in FeNi/Cr heterostructures by the symmetric components of the spin‐torque ferromagnetic resonance signals, which induced a sin2 θ symmetry in the angular dependence of the symmetric component amplitudes. This field‐like orbital torque is along the m × z direction, with an efficiency (−0.033) comparable to that of the damping‐like torque (0.068). A significant tilting of the orbital current polarization generated by the orbital Hall effect in the Cr layer leads to the z ‐component of the orbital current polarization and the large field‐like orbital torque. Furthermore, the y ‐component of the orbital current polarization shows a reversal behavior as the Cr thickness decreases, demonstrating the competition between the orbital currents generated by the surface oxide layer and those within the Cr bulk. These findings provide insights into the orbital torques in the 3d transition metals and highlight the potential of orbital‐torque‐driven magnetization switching in the absence of external magnetic fields for the applications of spintronic devices.

ABSTRACT CsPbBr 3 perovskite nanocrystals (Pe‐NCs) are promising solution‐processable emitters for light‐emitting devices due to their high brightness, color purity, and photoluminescence quantum yield. However, their integration into more advanced device architectures such as organic light‐emitting transistors (OLETs) remains limited by the lack of fully solution‐processable platforms that support uniform and compact Pe‐NCs emissive layers (EMLs). In this work, we report fully solution‐processed Pe‐NCs‐based LETs (Pe‐LETs) using CsPbBr 3 nanocrystals as the emitter. The realization of such a device is enabled by the development of a fully organic LET platform that incorporates: (i) a tailored bilayer gate dielectric of polyvinyl alcohol (PVA) and CyTOP, (ii) a solvent‐resistant p‐type polymer semiconductor, poly[2,5‐(2‐octyldodecyl)‐3,6‐diketopyrrolopyrrole‐alt‐5,5‐(2,5‐di(thien‐2yl)thieno[3,2‐b]thiophene)] (DPP‐DTT), and (iii) a nanocomposite EML of Pe‐NCs dispersed in a poly(9‐vinylcarbazole) and 1,3‐bis[2‐(4‐tert‐butylphenyl)1,3,4‐oxadiazo‐5‐yl]benzene (PVK:OXD‐7) matrix. Morphological and photophysical characterization, including confocal laser scanning microscopy, drives the optimization of solvent and processing conditions for uniform film formation. Benchmark device substructures are also used to fine‐tune the organic platform for effective EML integration. The resulting Pe‐LETs exhibit a narrow emission at 509 nm (full width at half maximum, FWHM = 19.2 nm), demonstrating excellent color purity suitable for displays and sensing. A maximum external quantum efficiency of 4.17 × 10 − 3 % is achieved, comparable to state‐of‐the‐art values for inorganic‐based LETs.

ABSTRACT Ising machines are specialized hardware solvers designed to solve computationally hard combinatorial optimization problems by finding ground states of the Ising model. As von Neumann architecture encounters fundamental bottlenecks in data movement, parallelism, and energy consumption, diverse physical implementations of Ising machines emerge as promising alternatives. This review comprehensively examines state‐of‐the‐art Ising machine implementations across five major categories: digital complementary metal‐oxide‐semiconductor (CMOS) platforms employing various annealing strategies, analog CMOS architecture based on physical interactions, emerging device‐based systems using coupled oscillators and probabilistic bits, coherent Ising machines leveraging photonic processes, and quantum approaches including both annealing and gate‐based algorithms. Each platform provides unique advantages rooted in its underlying physics, yet all face core bottlenecks in scaling and connectivity. These limitations exacerbate issues in power efficiency, time‐to‐solution, stochasticity, and reliability. Building on this cross‐platform analysis, monolithic three‐dimensional (M3D) integration is introduced as an emerging design paradigm to overcome planar constraints through vertical functional partitioning. This approach outlines how M3D integration could relax scaling and connectivity bottlenecks and may eventually enable Ising machines to reach the scale and complexity required for large‐scale real‐world optimization problems.

2D Transition Metal Dichalcogenides In their Research Article (10.1002/aelm.202500706), Thomas Heine, Anjana Devi, Kirill Monakhov, and co-workers show a lanthanide-phthalocyanine–augmented polyoxovanadate molecule interfacing with a MoS2 layer, with glowing streams representing interfacial charge transfer. This molecular–2D synergy tailors the optical and electronic properties of MoS2, enabling tunable emission and multilevel resistive-memory control, thereby accelerating progress toward molecularly gated ultrathin, low-power neuromorphic device architectures. Art by the team of INMYWORK Studio.

ABSTRACT Flexible thermoelectric generators (TEGs) are transforming wearable electronics by harvesting body heat as a sustainable power source, offering an alternative to conventional energy systems. However, their performance is often constrained by low thermal‐to‐electrical conversion efficiency. This work presents a detailed numerical investigation, based on finite element analysis (FEA), to optimize direct‐written organic micro‐TEGs (µ‐OTEGs) embedded in flexible substrates for enhanced skin‐heat energy harvesting. Organic semiconductors, including p ‐type poly(3,4‐ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) and n ‐type poly(benzodifurandione)/benzodipyrandione (PBFDO/BPDO), were selected for their tunable electrical and mechanical properties. Key design parameters were systematically refined to maximize power density and conversion efficiency. The embedded structure effectively minimizes interfacial heat loss, ensuring stable performance across various body locations and thermal conditions. Under optimized conditions, the embedded‐leg µ‐OTEG increases the temperature gradient (ΔT) from 3.58 to 10.4°C, raises the open‐circuit voltage ( V OC ) from 10.41 to 18.4 mV, and boosts the output power from 0.83 to 2.56 µW. Remarkably, the proposed architecture achieves over a 250% enhancement in thermal efficiency compared with conventional wearable TEGs, attributed to the optimized embedded configuration. These findings highlight the potential of direct‐written organic TEGs as scalable, self‐powered platforms for next‐generation wearable and biomedical devices.

ABSTRACT Precise structural design and controllable fabrication of single‐wall carbon nanotube (SWCNT) heterojunctions are key to harnessing their optoelectronic performance and advancing high‐performance optoelectronic devices. Here, we integrated Rhodamine B (RhB) molecules into (6,5) SWCNT films via a simple immersion method, thereby forming a Type I heterojunction. A dual enhancement of photoluminescence (PL) and photoelectric conversion efficiency was experimentally observed for the first time in Type I heterojunction films, with external PL efficiency increasing by more than two‐fold and photoelectric conversion efficiency improving by approximately one order of magnitude. These enhancements are attributed to the strong π–π stacking interactions between RhB and (6,5) SWCNTs, as well as the favorable matching of their absorption bands, which facilitates efficient exciton energy transfer from RhB to SWCNTs and substantially increases exciton density in the (6,5) SWCNT films. Additionally, under illumination, the photoinduced electron transfer from RhB to SWCNTs results in the accumulation of positive charges within the RhB layer, triggering the photogating effect and further enhancing the photoconductivity gain. The findings provide new insights into exciton and electron transfer processes in Type‐I heterojunctions for enhancing the photoelectric performance of SWCNT films, offering guidance for the design of high‐performance photoelectric devices.

ABSTRACT Freestanding complex oxide membranes enable the release and transfer of epitaxial films, offering new design freedoms for next‐generation electronics. While the LaAlO 3 /SrTiO 3 (LAO/STO) heterostructure exhibits remarkable tunable conductivity at its interface, the active interface remains buried beneath the substrate, limiting access to this functionality. Here, we demonstrate how the LAO/STO heterostructure, in membrane form, can be flipped and precisely positioned on silicon and other platforms using polymer‐free micromanipulation. The transferred membranes preserve atomically smooth surfaces, high crystallinity, and key electronic properties. Through the 44‐nm insulating STO layer, ultra‐low‐voltage electron‐beam lithography (ULV‐EBL) writes conductive nanostructures at the now‐accessible STO/LAO interface, offering the potential to function as programmable local gates that modulate charge carriers in the underlying silicon. The platform establishes a general strategy for integrating complex oxide heterostructures with semiconductors, quantum materials, and flexible substrates, enabling new architectures for reprogrammable nanoelectronic devices.