Abstract Polycrystalline diamond (PCD) thin films have been widely used as a coating material to enhance surface properties or protect against wear and tear. However, their implementation as an electronic material has been hindered by inconsistent semiconducting properties arising from their polycrystalline nature and associated processing challenges. In this study, the first demonstration of vertical Schottky barrier diodes fabricated using freestanding PCD membranes (PCDm) is presented, which addresses these limitations by enabling dual‐side access to the PCDm. The Schottky contact is formed on the high‐quality growth surface with larger grains and high sp 3 carbon content, while the ohmic contact is placed on the smoother, sp 2 ‐rich bottom side. This configuration enables distinct contact optimization on each surface, eliminating the trade‐offs encountered in conventional planar devices based on thin‐film PCD. The devices exhibit an excellent rectifying behavior with an on/off ratio of ≈10 3 and a breakdown field of 0.25 MV cm −1 —among the highest reported for PCD‐based Schottky barrier diodes. The result paves the way for the development of high‐performance electronic devices based on freestanding and transferable PCDm, positioning it as a cost‐effective and scalable wide‐bandgap semiconductor for next‐generation electronics.

Abstract Oscillating neural networks are promising candidates for a new computational paradigm, where complex optimization problems are solved by physics itself through the synchronization of coupled oscillating circuits. VO 2 Mott memristors are particularly promising building blocks for such oscillating neural networks. Until now, however, not only the maximum frequency of VO 2 oscillating neural networks, but also the maximum frequency of individual VO 2 oscillators is severely limited, which has restricted their efficient and energy‐saving use. In this study, it is showed how to increase the oscillating frequency by more than an order of magnitude into the 100 MHz range utilizing ultrasmall, ≈30 nm wide active volume VO 2 devices and optimizing the circuit layout for high frequency operation. In addition, the physical limiting factors of the oscillation frequencies are studied by investigating the complex switching dynamics of our nanoscale VO 2 devices. These dynamical studies, together with simulations, provide a clear conclusion on the maximum achievable operating frequencies and the optimal operating parameters under which these can be reached.

Abstract As silicon‐based electronics approach their scaling limits in the post‐Moore era, 2D semiconductors offer a promising path forward. In this study, first‐principles calculations are employed, combined with quantum transport simulations to predict that monolayer 1T‐phase germanium dioxide (1T‐GeO2) is an exceptional channel material due to its favorable metal–semiconductor interface properties. Through systematic contact engineering analysis, it is revealed that conventional metals—including Au, Pt, Pd, Ag, Ti, In—form ideal Ohmic contacts with 1T‐GeO2, exhibiting ultralow contact resistances of 35.33–54.03 Ω·µm. Notably, these simulations predict that 1T‐GeO2‐based field‐effect transistors (FETs) with Pd, Au, Ti, and Pt contacts exhibit ultrahigh on‐state currents of up to 1151–3237 nA nm−1 at an 8.5 nm channel length, surpassing the 2028 performance targets set by the International Roadmap for Devices and Systems (IRDS). These performance advantages originate from the intrinsic electronic properties of the metal/1T‐GeO2 interfaces, including small electron effective mass, weak Fermi‐level pinning, moderate orbital overlaps, absence of Schottky barriers, and low tunnel barriers, which enable both efficient carrier injection and excellent channel transport. These results suggest that 1T‐GeO2 is a leading 2D semiconductor candidate for scalable, high‐performance, and energy‐efficient transistors beyond conventional silicon technology.

Abstract Ensuring secure and energy‐efficient authentication of resource‐constrained devices has become a critical challenge owing to the rapid expansion of the Internet of Things (IoT) ecosystem. Physically unclonable functions (PUFs) that exploit inherent manufacturing variations to generate device‐unique keys have emerged as a promising hardware‐based security primitive. In this study, a PUF architecture is proposed that utilizes multi‐level programming of flash memory capacitors. Reliable and reproducible binary responses are generated across multiple programmed states by extracting flat‐band voltage variations from capacitance–voltage measurements. Performance is evaluated using the uniformity, P ‐value, inter‐Hamming distance, and intra‐Hamming distance, which indicated strong randomness, uniqueness, and stability. To further enhance the entropy and cryptographic strength, a hash‐based message authentication code (HMAC)‐based key derivation function is integrated, which transformed the PUF outputs into high‐entropy pseudorandom keys. The final architecture supported key generation with zero standby power and is compatible with commercially available memory structures, thereby enabling low‐cost and scalable deployment in secure IoT systems. These results highlight the potential of multi‐level memory‐based PUFs as a lightweight and robust solution for next‐generation hardware security.

Abstract Piezoelectric thin films are playing an increasingly important role in micro‐electromechanical systems (MEMS) as the expansion of 5G networks and the rise of Internet of Things (IoT) technologies fuel the need for smaller, more reliable, and energy‐efficient sensors and actuators. Alloying Aluminum Nitride (AlN) with Scandium (Sc) is a promising approach to enhance piezoelectric properties in wurtzite semiconductors. However, investigations on ScAlN piezo‐on‐Silicon (Si) have been largely focused on sputtered materials, which often limit resonators to operate in the out‐of‐plane mode, resulting in limited Q. In this study, the piezoelectric properties of ScAlN thin films are reported, which are epitaxially grown on AlN‐buffered Si (111) with enhanced in‐plane crystallinity and a high piezoelectric modulus d 33 up to 25.7 pC/N for Sc composition of 30%. This enables us to demonstrate extensional mode ScAlN‐on‐Si bulk acoustic wave (BAW) resonators with an ultra‐high Q of ≈97k at 70.28 MHz, resulting in a frequency‐ Q product of ≈6.86 × 10 12 , indicating low energy loss and high frequency precision, making it ideal for emerging wireless technologies with extremely low latency demands.

Abstract Here, an Isoindigo (IID) comprised with Naphthodithiophene (NDT)‐based low band‐gap donor–acceptor copolymer semiconductor is designed, synthesized, and investigated. The newly reported polymer provides good solubility in a range of halogenated and non‐halogenated solvents due to the attachment of long branched alkyl chains on the Isoindigo core. After optimizing the performance of organic field effect transistors (OFETs) through the use of high‐boiling‐point chlorinated solvents, A similar approach is followed to realize transistors without the need of using halogenated solvents as a green approach. Well‐working transistors are shown with mobility values in a similar range as obtained for OFETs with films prepared from halogenated solvents, while significantly reducing the environmental impact. Finally, all‐solution‐processed, flexible OFETs are prepared without the use of halogenated solvents, which is an important step in the view of potential large area production of flexible electronics.

Abstract This work investigates the use of femtosecond laser processing to fabricate various nanocarbon structures with distinct electrical behaviors within diamond substrates. Conventional approaches for achieving diamond doping have significant disadvantages, including challenging growth profiles, limited environmental stability, and sub‐optimal psuedo‐vertical structures. Here, it is demonstrated that laser‐written nanocarbon networks (NCNs) directly alleviate these issues, demonstrating the highly repeatable fabrication of robust and precise electrical architectures buried in diamond with proven stability over repeated temperature and voltage cycling. By varying the laser pulse repetition rate (PRR), a transition from Ohmic conductive to semiconductive/ambipolar behavior is achieved in the modified diamond. Furthermore, a proof‐of‐concept, all‐carbon transistor architecture buried within the bulk diamond is presented, showcasing the potential for integrated device fabrication using the laser‐writing process.

Abstract The contact resistance and the intrinsic channel mobility of p‐channel and n‐channel organic thin‐film transistors (TFTs) based on four different vacuum‐deposited small‐molecule semiconductors are monitored while the TFTs are stored in ambient air. The TFTs are fabricated in the inverted coplanar (bottom‐gate, bottom‐contact) device architecture, and the gold contact surface is functionalized using thiols. The initial contact resistance of all TFTs is quite small, between and 125 and 450 Ωcm, but it degrades quite rapidly over a span of 150 h, by 43% to 500%, depending on the semiconductor. Simultaneously, the intrinsic channel mobility degrades only slightly (between 11% and 50%), indicating that device degradation occurs primarily at the contact‐semiconductor interface. Across all investigated parameters, DPh‐DNTT is found to yield the most air‐stable TFTs among the semiconductors investigated here.

Abstract Brains perform decision‐making by Bayes theorem – events are quantified as probabilities and based on probability rules, computed to render the decisions. Learning from this, Bayes theorem may be applied to enable efficient user–scene interactions. However, given the probabilistic nature, implementing Bayes theorem with the conventional deterministic computing hardware can incur excessive computational cost and decision latency. Though challenging, here a probabilistic computing approach is presented based on memristors to implement Bayes theorem. Memristors are integrated with Boolean logic circuits and, by exploiting the volatile stochastic switching of the memristors, realize probabilistic Boolean logic operations, key for Bayes theorem hardware implementation. To empirically validate the efficacy of the hardware Bayes theorem in enabling user–scene interactions, lightweight Bayesian inference and fusion operators are designed using the probabilistic logic circuits and apply the operators in road scene parsing for self‐driving, including route planning and obstacle detection. The results show the operators can achieve reliable decisions in less than 0.4 ms (or equivalently 2500 fps), outperforming human decision‐making and the existing driving assistance systems.

Abstract Transparent solid‐state ionic conductors are emerging as next‐generation materials for various modern optoelectronics and energy applications. In this study, an organic‐inorganic hybrid metal halide is introduced, tris‐N‐butyl pyridinium nonachlorido‐dibismuthate(III), (C4py)3[Bi2Cl9]. The material is an optically transparent solid‐state ion conductor with high ionic conductivity at room temperature. Single crystal analysis reveals a structure composed of N‐butyl pyridinium cations and [Bi2Cl9]3− anions, formed by edge‐sharing BiCl6 octahedra. The material is thermally stable up to 300 °C and undergoes a melting transition at 101.6 °C. Notably, it demonstrates unidirectional growth in thin films, boasting over 90% optical transparency in the visible wavelength and overall ionic conductivity of 10−3 mS cm−1 at room temperature. (C4py)3[Bi2Cl9] stands out as one of the first reported low‐melting, optically transparent ionic solids, showcasing superior ion conduction and holding promise for applications such as electrochromic devices and energy storage.