High-temperature superconductor (HTS) BSCCO-based coherent terahertz (THz) sources have shown great potential as one of the leading solid-state platforms in THz science and technology. Stable, and chip-scale photonic components must be developed to effectively and efficiently control and manipulate their coherent radiation, especially for future communication systems and network applications. Here, we report on the design, simulation and modelling of ultrafast THz metamaterial photonic integrated circuits, on a few nanometers thick HTS BSCCO van der Waals (vdWs), capable of the active modulation of phase with constant transmission coefficient over a narrow frequency range. Meanwhile, the metamaterial circuit works as an amplitude modulator without significantly changing the phase in a different frequency band. Under the application of ultrashort optical pulses, the transient modulation dynamics of the THz metamaterial offer a fast switching timescale of 50 ps. The dynamics of picosecond lightmatter interaction_ Cooper pairs breaking, photoinduced quasiparticles generation and recombination, phonon bottleneck effect, emission and relaxation of bosons_ in BSCCO vdWs metamaterial arrays are discussed for the potential application of multifunctional superconducting photonic circuits in communication and quantum technologies.

Owing to their excellent optoelectronic properties, halide perovskites (HPs) have garnered significant attention in the field of optoelectronics. However, conventional HPs‐based optoelectronic devices primarily are fabricated using solution‐based processes, implying that extremely time‐consuming needs to individually synthesize their composition‐dependent optoelectronic properties. This study demonstrates the feasibility of combining first‐principles simulations with combinatorial synthesis, comparing the effects of HP properties on optoelectronic devices using this combined approach. The first‐principles simulations confirm that increasing the ratio of small halide ions increased the band gap by k·p perturbation theory and harmonic oscillator models. By fabricating HP thin films with compositional gradients using combinatorial synthesis, it is confirmed that an increase in band gap corresponds to a decrease in static relative permittivity. Furthermore, HP‐based optoelectronic devices are fabricated to measure their photoelectric conversion efficiency and responsivity based on the simulated and measured relative permittivity, including time‐resolved photoluminescence. The findings demonstrate the influence of the relative permittivity on device performance, elucidating the relationship between band structure and relative permittivity. Therefore, in this study, the potential of combining first‐principles simulations with combinatorial synthesis is confirmed by comparing the relative permittivity characteristics of optoelectronics developed using this combined approach.

Gallium nitride (GaN)‐based semiconductor laser diodes (LDs) have garnered significant attention due to their promising applications. However, high‐power LDs face serious degradation issues that limit their practical use. This study investigates the degradation factors of 437 nm and 6.3 W LDs by comparing light–current–voltage (L–I–V) characteristics, transmission electron microscopy (TEM), cathodoluminescence (CL), and secondary ion mass spectroscopy (SIMS) before and after 1000‐h aging. The diffusion of mirror coating from the resonant cavity surface is identified as a key factor contributing to high‐power LD degradation, which has not been reported in milliwatt‐level LDs. Meanwhile, the mechanisms behind the LD degradation are profiled and summarized together with the diffusion and other factors. On basis of the mechanism exploration, an anti‐aging technology for high‐power GaN‐based LDs is developed by using aluminum nitride for passivation layer and sapphire materials for mirror film. This anti‐aging technology has been verified, and a nearly ten‐time degradation suppression is achieved from 1000 h. This study elucidates the degradation mechanisms of high‐power GaN LDs and provides an effective technology to extend their lifespan, thereby prompting the practical applications of high‐power LDs.

The remarkable properties of toroidal metasurfaces, featuring ultrahigh‐Q bound states in the continuum (BIC) resonances and nonradiating anapole modes, have garnered significant attention. The active manipulation of quasi‐BIC resonance characteristics offers substantial potential for advancing tunable metasurfaces. This study explores explicitly the application of vanadium dioxide, a phase change material widely used in active photonics and room‐temperature bolometric detectors, to control quasi‐BIC resonances in toroidal metasurfaces. The phase change transition of vanadium dioxide occurs in a narrow temperature range, providing a large variation in material resistivity. Through heating thin film patches of vanadium dioxide integrated into a metasurface comprising gold split‐ring resonators on a sapphire substrate, remarkable control over the amplitude and frequency of quasi‐BIC resonances is achieved due to their high sensitivity to losses present in the system. Breaking the symmetry of meta‐atoms reveals enhanced tunability. The predicted maximum change in the quasi‐BIC resonance amplitude reaches 14 dB with a temperature variation of ≈10 °C.

This review explores how artificial intelligence (AI) is transforming fluorescence microscopy, providing an overview of its fundamental principles and recent advancements. The roles of AI in improving image quality and introducing new imaging modalities are discussed, offering a comprehensive perspective on these changes. Additionally, a unified framework is introduced for comprehending AI‐driven microscopy methodologies and categorizing them into linear inverse problem‐solving, denoising, and nonlinear prediction. Furthermore, the potential of self‐supervised learning techniques that address the challenges associated with training the networks are explored, utilizing unlabeled microscopy data to enhance data quality and expand imaging capabilities. It is worth noting that while the specific examples and advancements discussed in this review focus on fluorescence microscopy, the general approaches and theories are directly applicable to other optical microscopy methods.

The direct growth of III‐V materials on silicon is a key enabler for developing monolithically integrated lasers, offering substantial potential for ultradense photonic integration in vital communications and computing technologies. However, the III‐V/Si lattice and thermal expansion mismatch pose significant hurdles, leading to defects that degrade lasing performance. This study overcomes this challenge, demonstrating InAs/GaAs‐on‐Si lasers that perform on par with top‐tier lasers on native GaAs substrates. This is achieved through a newly developed epitaxial approach comprising a series of rigorously optimized growth strategies. Atomic‐resolution scanning tunneling microscopy and spectroscopy experiments reveal exceptional material quality in the active region and elucidate the impact of each growth strategy on defect dynamics. The optimized III‐V‐on‐silicon ridge‐waveguide lasers demonstrate a continuous‐wave threshold current as low as 6 mA and high‐temperature operation reaching 165 °C. At 80 °C, critical for data center applications, they maintain a 12 mA threshold and 35 mW output power. Furthermore, lasers fabricated on both Si and GaAs substrates using identical processes exhibit virtually identical average threshold current. By eliminating the performance limitations associated with the GaAs/Si mismatch, this study paves the way for robust and high‐density integration of a broad spectrum of critical III‐V photonic technologies into the silicon ecosystem.

Recent reports of upconversion and white light emission from graphitic particles warrant an explanation of the physics behind the process. A model is offered, wherein the upconversion is facilitated by photoinduced electronic structure modification allowing for multiphoton processes. As per the prediction of the model, it is experimentally shown that graphite upconverts infrared light centered around 1.31 μm (0.95 eV) to broadband white light centered around 0.85 μm (1.46 eV). The results suggest that upconversion from shortwave infrared (≈3 μm, 0.45 eV) to visible region may be possible. The experiments show that the population dynamics of the electronic states involved in this upconversion process occur in the timescale of milliseconds.

Halide perovskites have attracted increasingly attention as “rising star” materials for advanced photonics and optoelectronics. Construction micro‐/nano‐architecture of perovskites will provide a good platform to investigate and optimize the fundamental photon–matter–structure interaction. It will also improve the properties, pixelate and miniaturize the integration of versatile optoelectronic devices for emerging applications. In this regard, femtosecond (fs) laser processing technique has been widely used to fabricate micro‐/nano‐architecture with high spatial resolution, limitless flexibility, and unrestricted three‐dimensional structuring capability at a large‐scale, low‐cost way. Concurrently, it is reported that the high refractive index, low thermal conductivity and ultrafast thermalization rate of perovskites are beneficial for the processing by fs laser into micro‐/nano‐architecture without the degradation of their optoelectronic properties. This review systematically summarizes the interaction of fs laser with perovskites, including the mechanisms, and phenomena. Besides the traditional optoelectronics and applications of halide perovskites, the novel properties and applications from optical structures generated by fs laser processing of perovskites are also discussed. The challenges and outlooks for fs laser processed perovskite materials and devices are highlighted. This review will promote the relevant fundamental research on light–matter–structure interaction, and facilitate the integration of perovskite micro‐/nano‐architecture‐based optoelectronic devices.

Silicon nitride is widely used in integrated photonics for optical nonlinear wave mixing due to its low optical losses combined with relatively high nonlinear optical properties and a wide‐range transparency window. It is known that a higher concentration of Si in silicon‐rich nitride (SRN) magnifies both the nonlinear response and optical losses, including nonlinear losses. To address the trade‐off, four‐wave mixing (FWM) is implemented in over a hundred SRN waveguides prepared by plasma‐enhanced chemical vapor deposition in a wide range of SRN refractive indices varying between 2.5 and 3.2 (measured in the C‐band). It is determined that SRN with a refractive index of about 3 maximizes the FWM efficiency for continuous‐wave operation, indicating that the refractive index of SRN is indeed a crucial optimization parameter for nonlinear optics applications. The FWM efficiency is limited by large nonlinear optical losses observed in SRN waveguides with indices larger than 2.7, which are not related to two‐photon absorption. Finally, the third‐order susceptibility and the nonlinear refractive index are estimated for multiple SRN refractive indices, and, specifically, the nonlinearities as large as and are estimated in a waveguide with an SRN refractive index of 3.2.