Here, we report a self-powered metal–semiconductor–metal ultraviolet (UV) photodetector based on a compact ZnO thin film deposited by direct current magnetron sputtering onto a p-type silicon substrate. Unlike widely studied nanowires or nanoparticle films, the sputtered ZnO thin film forms a continuous and densely packed network of nanoflakes that enhances light absorption and charge transport. The resulting device exhibits rectifying characteristics of Schottky contacts and achieves excellent zero-bias performance, including a high responsivity of 0.68 A/W, a detectivity of 2.1 × 1012 Jones, an external quantum efficiency of 2.32 × 102%, and a fast transient photocurrent with rise and decay times of 68 ms and 138 ms, respectively, under 365 nm irradiation at 2.8 mW/cm2. These results highlight the potential of sputtered ZnO nanoflake thin films as an industrially compatible platform for cost-effective, high-speed, self-powered UV photodetectors.

We numerically investigated the feasibility of low-field magnetic resonance spectroscopy (MRS) using optically pumped magnetometers (OPMs). Low magnetic fields reduce signal strength and spectral resolution, challenging reliable metabolite quantification. To address these issues, we performed Bloch-equation–based simulations at 0.01–7 T using aqueous phantoms. We compared chemical shift selective and inversion recovery (IR) methods for water suppression. We also evaluated signal detection using both radio frequency coils and OPMs. The IR method, relying on T1 contrast rather than frequency selectivity, effectively suppressed water signals down to 0.1 T. The signal-to-noise ratio (SNR) of Glu increased below 0.7 T. OPMs maintained nearly constant SNR across 0.01–1 T and outperformed coils below 1 T. In mixed-metabolite settings, however, spectral overlap and IR-induced co-suppression impaired detection—particularly for Gln below 0.1 T. These results show that IR and OPMs offer complementary advantages for low-field MRS, while spectral resolution remains a challenge. This work provides a theoretical basis for enhancing low-field MRS techniques and expanding access to metabolic diagnostics in clinical and research settings.

This paper presents a method for extracting electron drift velocity vs electric field characteristics in AlGaN/GaN Fin structures by combining Fin-Hall bar and Fin-Transmission Line Model measurements. Carrier density and Ohmic contact resistivity were independently extracted as a function of Fin width, enabling accurate calculation of internal electric field and drift velocity from pulsed I–V curves. It is revealed that the drift velocity decreases with the narrowing of Fin width due to enhanced sidewall influence, and multi-channel structures show higher drift velocity thanks to weaker interaction between electrons and longitudinal optical phonons. This measurement method provides a quantitative approach for studying carrier transport behavior under high electric field, offering a fundamental tool for Fin-based device design and modeling.

The vast configuration space of magnetic metamaterials, enabled by embedding reversibly orientable magnets into rotating-square kirigami pixels, remains largely unexplored beyond uniform magnetization patterns. To navigate this space, in-plane magnetic orientations are treated as binary bits, creating 2N×N possible states for an N×N lattice. A Monte Carlo approach, combined with a mapping of all configurations onto an N2-dimensional hypercube, allows for the systematic statistical enumeration of energy landscapes and single-bit reconfiguration paths. This framework classifies stability into neutral, monostable, bistable, and tristable classes, with occurrence probabilities converging to approximately 0, 0.6013, 0.3981, and 0.0006 as system size increases. Programmable responses—including tension–compression asymmetric stiffness, snap-through instability, and a two-stage absorption/locking energy dissipation mode—are demonstrated. The resulting digital, graph-based platform points to applications in soft modular robotics, impact-mitigation layers, deployable structures, and mechanical logic.

It is well known that vacuum deposition of organic molecules possessing electric dipoles leads to spontaneous molecular orientation, resulting in the formation of a giant surface potential (GSP). The GSP is expected to be useful for energy-harvesting devices, and improving carrier injection in organic light-emitting diodes; therefore, maximizing the GSP is crucial for device performance. Here, we systematically investigate the factors governing GSP formation by examining the roles of glass transition temperature (Tg), substrate temperature (Tsub), and deposition rate using a series of organic materials, including adamantane derivatives, diarylethenes, and spiropyrans. The molecular orientation parameter ⟨cosθ⟩ exhibits a clear dependence on Tg, indicating that surface molecular dynamics during deposition play a dominant role. We demonstrate that the GSP slope is maximized when Tsub is maintained at approximately 0.8–0.85 Tg. This condition coincides with the maximum enthalpy relaxation of vapor-deposited organic glasses. Based on these results, we propose a three-regime model describing GSP generation as a function of surface molecular mobility (Tsub/Tg scaling), providing practical guidelines for maximizing GSP in vapor-deposited organic thin films.

Electric control of magnetism at room temperature is crucial for developing next-generation high-performance spintronics. However, the intrinsic incompatibility between ferroelectricity and magnetism in crystal symmetry, along with the absence of strong magnetoelectric coupling mechanisms, continues to pose major challenges. In this work, we propose a general theoretical framework for magnon manipulation based on ferroelectric polarization switching in two-dimensional multiferroics. Our results demonstrate that, in monolayer hexagonal multiferroics, ferroelectric switching can significantly modulate the intralayer spin exchanges, enabling nonvolatile ferroelectric control of magnons. More importantly, ferroelectric polarization reversal leads to a sign change in the Berry curvature, ensuring effective control over the valley and nonlinear Hall response of magnons. Combining density functional theory calculations, we further identify a class of material candidates with Curie temperatures near room temperature. Our results provide a new way toward low-power and ferroelectrically controllable spintronics.

We theoretically demonstrate genuine steady-state tripartite entanglement in a monolithic optomechanical nanobeam integrating one transverse electric (TE) and two transverse magnetic (TM) optical modes coupled to a single mechanical mode. The system achieves strong coupling rates of g1/2π≈6.99×105 Hz for the TE mode, and g2,3/2π≈5.92×104 Hz and 4.91×104 Hz for the TM modes, with a mechanical quality factor Qm≈2.15×109, ensuring thermal stability up to 350 mK. Our analysis reveals that while bipartite entanglement persists across various regimes, genuine tripartite entanglement requires strong coupling, confirming the optimal operating point of our design. Telecom-band compatibility at 1549 nm is achieved through width-dependent tuning. Using finite element simulations and quantum Langevin analysis, we identify parameter regimes where the three optical modes exhibit verifiable tripartite entanglement (Rτmin>0), stable under cryogenic conditions with milliwatt-level pump powers.

One method of electric field control of magnetization is to generate a strain in a piezoelectric layer by applying an electric field to it and transfer this strain to a magnetostrictive nanoscale magnet or to the magnetostrictive soft layer of a magnetic tunnel junction deposited on the piezoelectric, thus controlling its magnetization state through inverse magnetostriction (Villari effect). Such strain-mediated electric field control of magnetization offers an extremely energy-efficient method of writing the magnetic state (∼100 aJ/bit). This review discusses the development of computing paradigms based on strain control of magnetism, termed “straintronics” or “magnetic straintronics,” and their future potential. Here, we discuss various Boolean memory and logic devices as well as non-Boolean and neuromorphic computing devices proposed and experimentally demonstrated along with their potential advantages and key challenges.

HfO 2 -based ferroelectrics offer exceptional silicon compatibility and scalability for next-generation nonvolatile memory, yet the fundamental role of mechanical stress in their functional properties remains unresolved. This study provides direct experimental and theoretical evidence that tensile stress intrinsically governs the ferroelectric and dielectric response of Hf0.5Zr0.5O2. Using a uniquely designed stretchable ferroelectric capacitor (W/Hf0.5Zr0.5O2/TiN) on a polyimide substrate, we perform in situ measurements under controlled uniaxial tensile strain. Concurrent first-principles calculations simulate strain in the polar orthorhombic Pca21HfO2 phase. Both approaches conclusively demonstrate that switchable polarization monotonically decreases with strain, dielectric permittivity increases, leakage current reduces. These reversible trends are attributed to strain-induced rearrangement of the crystal structure (not electronic effects). In turn, domain reorientation and phase exchange are ruled out as the primary mechanism. Discrepancies in the absolute values between the experiment and the theory arise from polycrystallinity, interfacial tetragonal layers, and grain boundaries. Our findings resolve long-standing debates on stress-mediated ferroelectricity in HfO2, establishing that intrinsic lattice deformation—not extrinsic factors—primarily dictates property changes. This work enables precise stress engineering for HfO2-based electronic devices.

High-energy ions and metal debris generated by extreme ultraviolet (EUV) light sources pose a severe threat to collector optics. This study demonstrates a hybrid mitigation strategy that combines a helium buffer gas jet with a segmented Halbach cylinder to suppress debris from a discharge-produced plasma source. A semi-analytical model incorporating finite-length effects was developed to optimize the magnetic topology, achieving a central field strength exceeding 0.85 T for magnetic mitigation. Scanning electron microscopy and atomic force microscopy reveal a pristine witness surface with a 36% reduction in roughness compared to the non-magnetic case. In situ quartz crystal microbalance measurements demonstrate that the magnetic field alone reduces debris mass deposition by approximately 69%. Furthermore, unlike heavier buffer gases, the helium jet stabilizes mitigation performance with minimal in-band EUV absorption. These results establish the combined jet–magnetic scheme as a compact, high-efficiency solution for next-generation lithography sources.