Charge transport in metal halide perovskites is strongly limited by electron–phonon coupling (EPC) and trap-assisted recombination, which together hinder carrier mobility and device efficiency. Therefore, precise control of EPC strength is crucial for realizing high-performance optoelectronic devices, such as photodetectors. Here, we demonstrate a strategy to overcome these limitations by suppressing Fröhlich electron–phonon coupling in CsPbBr3 nanocrystals through strategic Ag-doping. Low temperature photoluminescence data reveal a dramatic suppression of the Fröhlich interaction, with the EPC strength narrowing from 85.1 ± 8.2 to 45.3 ± 6.1 meV, accompanied by a reduced activation energy upon Ag incorporation. This suppression of phonon-mediated dissipation is further validated by ultrafast transient absorption studies, which reveals significantly prolonged ground-state bleach recovery and extended carrier lifetimes. Consequently, Ag-doped photodetectors exhibit a record detectivity of ∼8.4 × 1013 Jones, an on/off ratio of ∼107, and a fourfold enhancement in the responsivity (0.64 A/W). The near-unity photocurrent behavior with intensity (exponent of 0.98), along with emission behavior, confirms Ag-doping passivates defects and improves carrier extraction. These results establish a strong correlation between lattice engineering and macroscopic device physics, offering a scalable route to high-performance, phonon-managed perovskite optoelectronics.

We demonstrate memcapacitor structures utilizing a quasi-two-dimensional electron gas, formed at the crystalline LaAlO3/SrTiO3 heterointerface, as electrodes and SiO2/SrTiO3 as dielectric layer. The observed memcapacitance originates from charge localization in a lateral floating gate, while an applied gate voltage induces a threshold voltage shift of approximately 1 V and enables reversible tuning of the zero-bias capacitance from ∼147 to ∼386 pF. Furthermore, preprogrammed or erased gate voltages enable controllable shifts of the capacitance hysteresis window toward positive or negative bias, leading to an enlarged capacitance gap of 243 pF compared to the initial value of 100 pF at zero bias. A theoretical model incorporating charge fluctuations within the oxide layer qualitatively reproduces the experimentally observed capacitance hysteresis and its frequency dependence, which is retained up to approximately 1 kHz. The demonstrated low voltage operation (±1 V), combined with gate tunability of oxide interface-based memcapacitors with focus on device physics bridges the path for power-efficient next generation computing architectures.

Encouraging progress has been made in boosting the hydrogen evolution reaction (HER) activity of NiMo-based catalysts. However, their practical application in anion exchange membrane water electrolysis (AEMWE) systems still faces the obstacle of stability, especially under intermittent operation conditions. Here, we developed an innovative electrodeposition method to regulate the surface/interface of NiMo-based catalysts by simultaneously adding a P source and an ammonium additive to the deposition precursor solution. The best-performing NiMoP-A catalyst exhibits excellent HER performance with an overpotential of only 175 mV at a current output of 1000 mA/cm2, which can be attributed to the improved specific surface active sites, enhanced hydrogen binding energy, and optimized OH binding energy. Furthermore, when paired with a bare Ni foam anode in AEMWE, the device with NiMoP-A cathode exhibits ultra-high stability with almost no decay during the accelerated stress testing involving 10k startup/shutdown cycles. Such stability originates from the synergistic effect of P-doping and ammonium additives, which jointly modulate the surface/interface of the catalyst, thereby enhancing both mechanical and chemical stability. This study provides key insights into enhancing electrode stability in AEMWE under intermittent operation conditions.

We determine the composition dependence of the below-bandgap anisotropic refractive indices and dielectric functions of β-(AlxGa1−x)2O3 for x up to 25% Al. We use Mueller matrix generalized spectroscopic ellipsometry and investigate a set of high quality single crystalline bulk (x=0%,5%,10%,15%,20%,25%) and thin film (4.6%, 9.7%, 12%, 15%, 16.3%, 21%) samples grown by the Czochralski method and by plasma-assisted molecular beam epitaxy, respectively. Bulk samples with 0.2% silicon doping are cut from ingots with (100) surface and the unintentionally doped thin films samples are grown pseudomorphically on (010) β-Ga2O3. The combination of ellipsometry data from both sample sets permits to fully determine the optical properties of the transparent alloys. We employ a quasi-orthorhombic approach which ignores the very small shear components induced by the monoclinic crystal structure. We also ignore the possibly small effects due to strain within the pseudomorphically grown epitaxial samples. We report indices and dielectric functions for polarization along lattice vectors a, b, and reciprocal lattice vector c⋆. All indices reduce with increasing incorporation of aluminum while the spectral range of transparency increases due to the increase in bandgap energy with composition. We use our results to predict Bragg reflector multilayer structures on b-plane β-(Al0.20Ga0.80)2O3, for use in polarization sensitive narrow-band optical filters in the short wavelength region.

CeTe3 is a 2-dimensional (2D) Van der Waals (VdW) material with incommensurate charge density waves (CDW), extremely high transition temperature (TCDW), and a large momentum-dependent CDW gap that leaves a significant portion of the Fermi surface intact. It is also considered to be a weak Kondo system, a property unexpected for a material with incommensurate CDW, where each atomic site is slightly different. Here, we study the properties of the CDW state in several RTe3 (R is rare earth) materials and examine the hybridization of itinerant states with the localized Ce 4f multiplet in CeTe3 by using angle resolved photoemission spectroscopy. We find that the renormalization of the itinerant states originating from the hybridization with the deeper localized 4f states at −260 meV is k−dependent and extends to the Fermi level. As these localized states are far from the Fermi level, the observed hybridization affects the effective masses only marginally and does not lead to heavy fermions. However, since the same renormalizing mechanism normally leads to the heavy fermion physics when the localized 4f states are near the Fermi level, our observation of its strong k−dependence suggests that this could be the reason for discrepancy between the heavy masses in specific heat and light ones in Shubnikov de Haas oscillations, often observed in heavy fermions.

This paper proposes and experimentally validates an active temperature drift compensation method for electrostatic actuation-piezoresistive detection microelectromechanical systems (MEMS) resonant pressure sensors. The method dynamically adjusts the voltage across the sensing piezoresistors to actively regulate the local temperature and thermal stress distribution of the resonant beam using the generated Joule heating effect, thereby offsetting the frequency drift caused by changes in ambient temperature. Experimental results show that the dynamic compensation scheme can significantly reduce the frequency drift of the sensor from 168 to 8.5 Hz within the wide temperature range of −45–85 °C, and the maximum fitting error within the full temperature range and full pressure range (10 kPa–5 MPa) is only 0.0058% FS. In addition, the scheme improves the quality factor (Q-factor) and short-term frequency stability of the sensor at high temperatures. This work provides a low-complexity and high-efficiency dynamic self-compensation solution for achieving high-precision and high-stability MEMS resonant sensors.

Ocean wave energy represents a promising renewable resource with high energy density. However, its inherently low-frequency, stochastic, and multi-directional characteristics pose significant challenges for efficient energy harvesting. In this study, a pendulum-type counter-rotating electromagnetic generator (CREMG) is proposed to address these issues. The CREMG integrates a planetary gear system and dual one-way bearings. The one-way bearings convert irregular bidirectional pendulum motion into unidirectional rotation, and the planetary gear system amplifies the rotation by a 1:4 transmission ratio, collectively enhancing energy conversion efficiency. Experimental results show that the proposed CREMG delivers a maximum RMS power of 304.46 mW at an optimal load resistance of 5000 Ω, with a 1 F capacitor charged to 3.44 V within 400 s, corresponding to a harvested energy of 5.92 J. To further validate its practical potential, the CREMG was used to power a customized wireless sensing circuit for temperature and humidity monitoring under random excitations. Overall, this work demonstrates a compact and efficient solution for low-frequency wave energy harvesting, offering a viable pathway toward self-powered marine sensing and autonomous ocean monitoring systems.

Superconducting microresonators have diverse applications, including microwave kinetic inductance detectors, microwave superconducting quantum interference device multiplexers, and superconducting qubits. Arrays of such devices are typically addressed using microwave frequency combs with probe tones matched to individual device resonances. However, resonator frequency collisions caused by wafer non-uniformity and fabrication variations significantly limit usable device yields. In this Letter, we present a technique that mitigates these frequency collisions without the need for ex post facto processing. By leveraging nonlinear kinetic inductance and persistent current in a superconducting loop, we achieve in situ tuning of individual resonator frequencies within an array during device cooldown, effectively resolving frequency collisions in a way that is both highly flexible and reversible. We successfully demonstrate this technique by tuning a small array of four resonators to both identical frequencies and a uniformly spaced frequency comb. This in situ resonator tuning approach provides a universal solution for improving yield and multiplexing density in large resonator arrays, addressing a critical need for scaling up superconducting detector and qubit systems.

We demonstrate a pronounced decrease in the electrical resistance of highly disordered palladium (Pd) films deposited under a high working Ar pressure using a compact film coating system. The resulting resistance change ratio of up to 1/335 is predominant among those reported previously. Film characterization suggests two primary mechanisms responsible for this significant resistance reduction: atomic force microscopy observation indicates improved electrical contacts among Pd grains, and X-ray diffraction measurement demonstrates hydrogenation-induced crystallization of Pd. These findings offer a simple scheme to enhance hydrogen sensor performance and can contribute to a more comprehensive understanding of the hydrogenation process in Pd.

We experimentally demonstrate temporal ghost imaging (TGI) based on an integrated chaotic laser. The chaotic laser is a monolithically integrated four-section semiconductor laser, consisting of two distributed-feedback laser sections, an amplification section, and a phase section located between them. Compared with the traditional method of generating chaotic light, optical feedback lasers, this laser has a broader spectrum and does not exhibit feedback delay signature, both of which can improve TGI quality. Experiments reveal the effects of object rate, measurement times, and modulation depth on imaging quality and achieve TGI for 16-Gbit/s non-return-to-zero signals with a detection bandwidth of 1 GHz. It is also demonstrated experimentally that the integrated chaotic laser exhibits superior stability to discrete chaotic laser system; the fluctuation of imaging quality factor is reduced by 35%. Additionally, the TGI is robust to noise, and it maintains reliable performance even at a signal-to-noise ratio of −6.48 dB. It is believed that chaotic lasers are a highly promising TGI light source due to their small size and strong robustness.