A thermally stable ultra-broadband metasurface-based emitter comprising square-shaped Ni resonators on Si substrate was investigated. The planer multilayer metamaterial emitter exhibits high emissivity of 94% over a span of 400–8450 nm wavelength. With the optimized structural parameters, the results show the thermal emission efficiency of 93.55% and photothermal conversion efficiency of 90.5% at 900K, which determines strong solar energy absorption of the emitter cavity. However, variations in structural parameters and the angle of incidence leave a minor impact on thermal emissivity. The findings show the developed structure to be of potential in efficient solar energy utilization.

We investigate in this letter the role the voltage ramp rate plays in the conduction and programming characteristics of bipolar-type memristive devices. It is shown that speeding up the writing or erasing process of a memristor is beneficial in terms of energy consumption but has a side cost associated with power dissipation. This happens because of the dynamical aspects of the set and reset transitions which are ultimately dictated by the physics of metal ions and oxygen vacancies migration. It is shown that by adding a constant base voltage to the voltage sweep, shorter programming times can be achieved but no significant impact on the power dissipation-energy consumption relationship is observed. Modeling and simulations are carried out with the aid of the Dynamic Memdiode Model and its implementation in LTspice using the Method of Elementary Solvers. Since the device model parameters and simulation conditions can vary in a wide range, the complete schematics are provided so that the interested readers can test different casuistries by themselves.

A novel photonic crystal nanoresonator-based optical bandpass filter is designed with ultranarrow bandwidth, high quality factor, low optical loss and very small compact size. The proposed S-Shaped nanostructure is playing a very significant role on narrow wavelength filtering and effectively localize the incident light signal which leads to the high-quality factor is obtained with 100 % transmission. The different light coupling mechanism is used to realize the four dissimilar narrow bandpass filters. These nano-filter performance parameters are numerically investigated by Finite Difference Time Domain Method (FDTD). The nanoresonator coupled waveguides platform is designed with high quality factor as about 3873.70, ultra narrow bandwidth of 60 GHz and 0.13 THz. The presented photonics platform footprint is very compact as about 128.52 μm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> . These enhanced results highly suitable for optical integrated circuits, 5G and 6G optical wireless network.

This letter introduces a conformal multifunctional Terahertz Metamaterial-Resonator (TMR) that achieves ultra-wideband absorption (4.6–9.3 THz) without extra circuit components. Its isotropic design ensures angular and polarization stability on flat and curved surfaces. Utilizing phase-changing Vanadium Oxide (VO<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub>), the TMR reconfigures as an absorber, reflector, or transmissive structure, with simulation results aligning with the derived equivalent circuit model.

In this article, the electronic and quantum transport properties for the bulk configuration of armchair graphene nanoribbons (AGNRs) with varied number of carbon atoms along AGNR width (N) are investigated. The semi-empirical (SE) Density Functional Theory (DFT) approach is used to calculate the band structure, density of states (DOS), and transmission spectrum for the bulk configuration of AGNR. Further, the AGNRs are used in channel material to analyze the performance of field-effect transistors with Gate Stack (GS) architecture. The result shows that the bandgap value is higher for AGNR (N = 4) with a value of 1.98 eV compared to another bulk configuration of AGNRs. In addition to this, AGNR (N = 4) also shows an improved transmission spectrum. Moreover, the transmission spectrum at varied input voltages and projected local density of states (PLDOS) are also analyzed to study the performance of the proposed devices. The parameters mentioned above give a unique idea for evaluating the performance in terms of resonance peaks and electronic structure for device configurations. The off current (I<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">off</sub>) is remarkably reduced, and the switching ratio (I<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">on</sub>/I<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">off</sub>) is significantly improved in GS-AGNR (N = 4) FET compared with other device configurations. Owing to the enhanced switching, this paper highlights GS-AGNR (N = 4) FET as a suitable candidate for low-power applications such as low-power sensors, wireless communication, and medical devices.

Elevated levels of nitrogen dioxide (NO<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub>) pollutants have captured significant attention due to their profound influence on the cardiovascular and respiratory systems; hence, high-performance monitoring systems for pollutants are imperative to safeguard the well-being of individuals. In this regard, a hydrogen-passivated two-probe Armchair Graphene Nanoribbon (ArGNR) gas sensor utilizing a doped/undoped configuration can be considered to mitigate the NO<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> pollutants. Therefore, this research, for the first time, examines the influence of channel length and transport properties on the <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">i-v</i> behavior of NO<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> pollutants for doped/undoped ArGNR-based sensors. The electronic properties are rigorously examined using the density function theory (DFT) within the linear combination of atomic orbital (LCAO) and semi-empirical computation techniques, leveraging principles derived from non-equilibrium Green's function. In comparison to the undoped ArGNR, the BAs doped ArGNR exhibits superior chemisorption energy of −2.3 eV (with spin effect) and −3.3 eV (without spin effect), coupled with the substantial bandgap variation of −10.22, 36.50% (with spin effect) and 100% (without spin effect), at the <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">B</i> and <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">As</i> sites, respectively. In addition, a high quantum transport spectrum of 57% and significant current variations of 95% and 77% at the <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">B</i> and <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">As</i> sites, respectively, upon the NO<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> adsorption. These findings suggest that the B-As-doped ArGNR sensor provides a promising solution for susceptible NO<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> detection.

In this letter, we have successfully fabricated a metal-ferroelectricity-metal (MFM) capacitor of an ultrathin 5 nm HZO utilizing Molybdenum (Mo) as the electrodes. By proposing a novel atomic layer deposition (ALD) scheme, we overcome the challenge of oxidation of the lower Mo electrode; a 2 nm HZO deposited by thermally enhanced ALD followed by a 3 nm HZO deposited by plasma enhanced ALD. The fabricated sample demonstrated a 2Pr value of 38.5 μC/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> at an operating voltage of 2V. Furthermore, in endurance testing, the sample maintained a 2Pr value of 36.9 μC/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> even after 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">10</sup> cycles (△2Pr/2Pr <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">pristine</sub> ≈ 7% from pristine to 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">10</sup> cycles). With a maximum process temperature of 400°C, our approach thereby meets the stringent requirement of Back-End-of-Line (BEOL) integration.

In this paper, a layered transmission line based on graphene is designed and investigated to provide amplitude modulation in the low terahertz frequency band. The proposed primary structure is composed of a graphene transmission line on a dielectric layer, as substrate, loaded by a transverse graphene strip and backed by a continuous graphene sheet, as ground plane. The intermediate graphene strip is electrically isolated from the input and output ports. The structure is first investigated by full-wave simulation method, with various chemical potentials of graphenes, and the ABCD matrices are extracted. Then, applying the analytical method based on the ABCD matrices, the scattering parameters of the cascade of several segments of the proposed primary transmission line are investigated, and the promising configuration for the amplitude modulator is derived. It is shown that, variations of signal transmission required by amplitude modulation performance are achieved by cascading six segments of the proposed transmission line and changing the chemical potential of graphene parts. The designed amplitude modulator is investigated, and high modulation depth of nearly 100% and flat response in 3.4-3.8 THz frequency band is achieved.

The Silicon cold source field-effect transistor (CSFET) offers a compelling solution for low-power logic devices due to its ability to achieve sub-60 mV/dec steep-slope switching with innovative source engineering, while maintaining compatibility with Silicon CMOS technology. Developing a compact model for CSFETs is crucial for advancing our understanding of these novel devices and enabling advanced design and simulation based on CSFETs. To this end, this work introduces a compact model specifically designed for n-type double-gate CSFETs. Employing the Landauer-Büttiker approach alongside machine learning (ML)-based band energy profiles, our model accounts for thermal current via ballistic transport and tunneling current from source-to-drain direct tunneling. Consequently, our model accurately represents the drain current-gate voltage relationship in CSFETs. Furthermore, our proposed model is applicable to both CSFETs and conventional MOSFETs. This enables benchmarking analysis between CSFETs and conventional MOSFETs, shedding light on their comparative performance metrics.