Interdisciplinary MaterialsVolume 2, Issue 2 p. iii-iii COVER IMAGEOpen Access Outside Back Cover: Volume 2 Issue 2 First published: 20 March 2023 https://doi.org/10.1002/idm2.12083AboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Graphical Abstract Outside Back Cover: Magnetic skyrmions are particle-like magnetic nanostructures with spins varying continuously from core to edges, which can be found in a large number of materials. Their topological nature results in exotic properties and easy controllability via electric and optical methods, making them emerging candidates as information carriers in spintronic devices like skyrmion racetrack memory and skyrmion logic gates as well as in artificial neural networks. Volume2, Issue2March 2023Pages iii-iii RelatedInformation

Interdisciplinary MaterialsVolume 2, Issue 1 p. iii-iii COVER IMAGEOpen Access Inside Back Cover: Volume 2 Issue 1 First published: 29 January 2023 https://doi.org/10.1002/idm2.12075AboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Share a linkShare onFacebookTwitterLinkedInRedditWechat Graphical Abstract Inside Back Cover: Grain boundaries (GBs) can be treated as two-dimensional interfacial phases. As bulk phase diagrams and calculation of phase diagram methods serve as a foundation for modern materials science, it is proposed to extend them to GBs to have equally significant impacts. Thermodynamic models, atomistic simulations, and machine learning methods can be used to compute GB “phase” diagrams. For example in the cover, atomistic simulation data are used to train an artificial neural network model to forecast GB properties as functions of four independent compositional degrees of freedom plus temperature in 5-D for a given GB in high-entropy alloys. Volume2, Issue1January 2023Pages iii-iii RelatedInformation

Outside Front Cover Mechanical interlocking structure is widely observed in living beings, such as the wings of beetles. Inspired by the biological structure, the holey [email protected]2 anode with strong mechanical interlocking is synthesized. The structure enhances Li+ storage by transmitting the strain from SiO2 to the holey graphene and by a mechano-electrochemical coupling effect.

Abstract Bi2Te3‐based materials are not only the most important and widely used room temperature thermoelectric (TE) materials but are also canonical examples of topological insulators in which the topological surface states are protected by the time‐reversal symmetry. High‐performance thin films based on Bi2Te3 have attracted worldwide attention during the past two decades due primarily to their outstanding TE performance as highly efficient TE coolers and as miniature and flexible TE power generators for a variety of electronic devices. Moreover, intriguing topological phenomena, such as the quantum anomalous Hall effect and topological superconductivity discovered in Bi2Te3‐based thin films and heterostructures, have shaped research directions in the field of condensed matter physics. In Bi2Te3‐based films and heterostructures, delicate control of the carrier transport, film composition, and microstructure are prerequisites for successful device operations as well as for experimental verification of exotic topological phenomena. This review summarizes the recent progress made in atomic defect engineering, carrier tuning, and band engineering down to a nanoscale regime and how it relates to the growth and fabrication of high‐quality Bi2Te3‐based films. The review also briefly discusses the physical insight into the exciting field of topological phenomena that were so dramatically realized in Bi2Te3‐ and Bi2Se3‐based structures. It is expected that Bi2Te3‐based thin films and heterostructures will play an ever more prominent role as flexible TE devices collecting and converting low‐level (body) heat into electricity for numerous electronic applications. It is also likely that such films will continue to be a remarkable platform for the realization of novel topological phenomena.