Electrohydrodynamic (EHD) inkjet printing has emerged as a powerful micro-/nanofabrication technique for high-resolution perovskite quantum dot (PeQD) color-conversion layers, offering precise control over pixel morphology, dimensions, and composition. This review systematically examines the mechanisms of cone-jet and electrostatic-attraction modes in EHD printing, highlighting recent advances in PeQD ink design, solvent and ligand engineering, and printing parameter optimization. Perovskite precursor and colloidal inks are discussed in detail, emphasizing strategies to enhance droplet ejection stability, suppress coffee-ring effects, and achieve uniform, high-luminescence pixels. Ligand exchange, dual-ligand passivation, and core−shell or polymer encapsulation are shown to effectively mitigate ion migration, surface defects, and environmental degradation, thereby improving photoluminescence efficiency and stability. Multi-channel and multi-nozzle EHD printing systems enable dynamic halide composition control and parallel RGB pixel deposition, facilitating ultrahigh-resolution patterning down to submicron feature sizes. Finally, the review highlights future directions, including synergistic PeQD material synthesis, advanced ink formulation, scalable high-throughput printing, and integration of PeQD color-conversion pixels into full-color micro-LED displays with minimal crosstalk and robust operational stability. These developments collectively demonstrate the immense potential of EHD inkjet printing for next-generation high-performance display technologies.

The introduction of high-k/metal gate (HK/MG) technology enables independent tuning of N-type metal−oxide−semiconductor (NMOS) and P-type metal−oxide−semiconductor (PMOS) threshold voltages, facilitating advanced nodes and improving overall chip performance. However, severe pattern loading effects during PMOS device fabrication pose challenges in dummy poly removal. This work reports the optimization of the photoresist etch back (PREB) process, providing a wider process window for subsequent AL CMP. By tuning the PR coating uniformity to 1.6% and applying four-zone electrostatic chuck (ESC) temperature control, the wafer-level uniformities of PR, SiN, and SiO2 were reduced to 6.3%, 2.3%, and 5.1%, respectively. An optimized over etch (OE) recipe with a high selectivity of PR : SiN : SiO2 ≈ 1 : 1 : 6 effectively balanced gate height loading between N- and PMOS regions. Furthermore, precise EB1 time tuning enabled defect removal, while advanced KLA inspection ensured early detection of critical failure modes. Collectively, these measures establish a robust and stable PREB process for advanced logic device fabrication.

Selectivity remains a significant challenge for gas sensors. In contrast to conventional gas sensors that depend solely on conductivity to detect gases, we exploited a single NiO-doped SnO2 sensor to simultaneously monitor transient changes in both sensor conductivity and temperature. The distinct response profiles of H2 and NH3 gases were attributed to differences in their redox rates and enthalpy changes during chemical reactions, which provided an opportunity for gas identification using machine learning (ML) algorithms. The test results indicate that preprocessing the extracted calorimetric and chemi-resistive parameters using the principal component analysis (PCA), followed by the application of ML classifiers for identification, enables a 100% accuracy for both target analytes. This work presents a facile gas identification method that enhances chip-level sensor applications while minimizing the need for complex sensor arrays.

Significant progress has been achieved in the field of organic solar cells (OSCs). Most devices with power conversion efficiencies (PCEs) exceeding 20% rely predominantly on active materials that incorporate D18 or its derivatives as the donor. In contrast, the PCEs over 20% have been realized as well for OSCs with the non-D18-based donor materials by simultaneously optimizing material properties, active layer morphologies and interface engineering, thereby demonstrating the potential to outperform D18 counterparts. Therefore, this review summarizes an overview of recent advancements in OSCs with the PCEs over 20% utilizing the non-D18-based donor materials, and highlights three critical aspects including molecular design strategies, the active layer morphologies, and the interface optimization. Their synergistic roles are advantageous in enhancing the exciton dissociation, facilitating the charge transport, and suppressing the recombination losses, accordingly supporting the improved PCEs over 20%. Furthermore, the challenges and valuable insights are discussed, which can lead to improved efficiency, scalable fabrication, and enhanced environmental and thermal stability, potentially accelerating the commercialization of OSCs.

This work presents a systematic analysis of proton-induced total ionizing dose (TID) effects in 1.2 kV silicon carbide (SiC) power devices with various edge termination structures. Three edge terminations including ring-assisted junction termination extension (RA-JTE), multiple floating zone JTE (MFZ-JTE), and field limiting rings (FLR) were fabricated and irradiated with 45 MeV protons at fluences ranging from 1 × 1012 to 1 × 1014 cm−2. Experimental results, supported by TCAD simulations, show that the RA-JTE structure maintained stable breakdown performance with less than 1% variation due to its effective electric field redistribution by multiple P+ rings. In contrast, MFZ-JTE and FLR exhibit breakdown voltage shifts of 6.1% and 15.2%, respectively, under the highest fluence. These results demonstrate the superior radiation tolerance of the RA-JTE structure under TID conditions and provide practical design guidance for radiation-hardened SiC power devices in space and other high-radiation environments.

In this paper, a planar junction mid-wavelength infrared (MWIR) photodetector based on an InAs/GaSb type-Ⅱ superlattices (T2SLs) is reported. The Intrinsic-πMN superlattices was grown by the molecular beam epitaxy (MBE), followed with a ZnS layer grown by the chemical vapor deposition (CVD). The p-type contact layer was constructed by thermal diffusion in the undoped superlattices. The Zinc atom was successfully realised into the superlattice and a PπMN T2SL structure was constructed. Furthermore, the effects of different diffusion temperatures on the dark current performance of the devices were researched. The 50% cut-off wavelength of the photodetector is 5.26 μm at 77 K with 0 V bias. The minimum dark current density is 8.67 × 10−5 A/cm2 and the maximum quantum efficiency of 42.5%, and the maximum detectivity reaches 3.90 × 1010 cm·Hz1/2/W at 77 K. The 640 × 512 focal plane arrays (FPA) based on the planner junction were fabricated afterwards. The FPA achieves a noise equivalent temperature difference (NETD) of 539 mK.

Low power consumption, high responsivity, and self-powering are key objectives for photoelectrochemical ultraviolet detectors. In this research, In-doped α-Ga2O3 nanowire arrays were fabricated on fluorine-doped tin oxide (FTO) substrates through a hydrothermal approach, with subsequent thermal annealing. These arrays were then used as photoanodes to construct a ultraviolet (UV) photodetector. In doping reduced the bandgap of α-Ga2O3, enhancing its absorption of UV light. Consequently, the In-doped α-Ga2O3 nanowire arrays exhibited excellent light detection performance. When irradiated by 255 nm deep ultraviolet light, they obtained a responsivity of 38.85 mA/W. Moreover, the detector's response and recovery times are 13 and 8 ms, respectively. The In-doped α-Ga2O3 nanowire arrays exhibit a responsivity that is about three-fold higher than the undoped one. Due to its superior responsivity, the In-doped device was used to develop a photoelectric imaging system. This study demonstrates that doping α-Ga2O3 nanowire with indium is a potent approach for optimizing their photoelectrochemical performance, which also has significant potential for optoelectronic applications.