Research Article410.1016/0029-554x(81)90706-0Analysis of ion bombarded cylindrical geometry solidsApr 01, 1981Nuclear Instruments and MethodsT Nenadović + 3 more +3CiteListenSave
Research Article710.1016/0029-554x(81)90784-9Electronic transport in ion-bombarded amorphous siliconApr 01, 1981Nuclear Instruments and MethodsR Pfeilsticker + 2 more +2CiteListenSave
Research Article410.1016/0029-554x(81)90099-9A non-iterative method for fitting of overlapping Gaussian peaksApr 01, 1981Nuclear Instruments and MethodsTakeshi MukoyamaCiteListenSave
Research Article3310.1016/0029-554x(81)90809-0Radiation damage and refractive index of ion-implanted LiNbO 3Apr 01, 1981Nuclear Instruments and MethodsHarald Karge + 3 more +3CiteListenSave
Research Article1610.1016/0029-554x(81)90702-3The repetitive flaking of inconel 625 by 100 keV helium ion bombardmentApr 01, 1981Nuclear Instruments and MethodsJ.l Whitton + 3 more +3CiteListenSave
Research Article8610.1016/0029-554x(81)90676-5Ion-beam mixing of metal-semiconductor eutectic systemsApr 01, 1981Nuclear Instruments and MethodsS.s Lau + 6 more +6CiteListenSave
Research Article1710.1016/0029-554x(81)90793-xRetardation and suppression of nickel silicide formation by N + implantationApr 01, 1981Nuclear Instruments and MethodsD.m Scott + 3 more +3CiteListenSave
Research Article1710.1016/0029-554x(81)90677-7Ion bombardment induced interface mixing in the AgSi systemApr 01, 1981Nuclear Instruments and MethodsN.p Tognetti + 4 more +4CiteListenSave
Research Article3010.1016/0029-554x(81)90827-2The effect of ion implantation on the fatigue properties of polycrystalline copperApr 01, 1981Nuclear Instruments and MethodsA Kujore + 3 more +3CiteListenSave
Research Article6110.1016/0029-554x(81)90712-6Limits to solid solubility in ion implanted siliconApr 01, 1981Nuclear Instruments and MethodsJ.s Williams + 1 more +1CiteListenSave