- Research Article
- 10.32326/1814-9146-2025-87-4-514-526
SOME ACOUSTIC PROPERTIES OF HETEROSTRUCTURES WITH THIN LITHIUM TANTALATE PLATES ON A (0001)-CUT ɑ-SAPPHIRE SUBSTRATE
- Dec 30, 2025
- Problems of Strength and Plasticity
- V.v Kalinchuk + 3 more +3
A promising mathematical model for the creation of wide-purpose acoustoelectronic devices has been developed for a piezoactive heterostructure consisting of a W-cut lithium tantalate crystal plate deposited through a silicon dioxide buffer layer onto a (0001)-cut ɑ-sapphire substrate, where W defines the normal to the crystal cut surface. The model takes into account the crystal cut orientation, the direction of propagation of a horizontally polarized shear wave, and the geometric dimensions of the heterostructure's constituent elements. This allows for a wide range of parameter variations to achieve maximum values of the electromechanical coupling coefficient. The heterostructure's properties have been studied with and without a buffer layer. For the latter case, the analysis allowed for determining the optimal orientation of the lithium tantalate plate cut and its thickness, which would ensure the optimal level of electromechanical coupling. The maximum value of this coefficient, for a given cut orientation and specific geometric parameters of the heterostructure, is achieved by selecting the wave propagation direction. A study of a heterostructure with a silicon dioxide buffer layer revealed that its introduction significantly increases the electromechanical coupling coefficient. A detailed study of the acoustic wave amplitude and energy flux density distribution across the heterostructure's depth was conducted. Calculations revealed that both the wave amplitude and the degree of elastic energy localization in the piezoactive layer depend on the presence of the buffer layer and the thickness of the piezoactive layer, which directly affects the electromechanical coupling coefficient. Its maximum is observed at a small piezoactive layer thickness. Thus, optimal heterostructure parameter values exist that allow for achieving the maximum electromechanical coupling coefficient. This study is of interest to developers of acoustoelectronic devices and general-purpose devices.achieving maximum EMCC. This study is of interest to developers of acoustoelectronic devices and general-purpose devices.
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